Memory elements and cross point switches and arrays of same using nonvolatile nanotube blocks
Under one aspect, a covered nanotube switch includes: (a) a nanotube element including an unaligned plurality of nanotubes, the nanotube element having a top surface, a bottom surface, and side surfaces; (b) first and second terminals in contact with the nanotube element, wherein the first terminal is disposed on and substantially covers the entire top surface of the nanotube element, and wherein the second terminal contacts at least a portion of the bottom surface of the nanotube element; and (c) control circuitry capable of applying electrical stimulus to the first and second terminals. The nanotube element can switch between a plurality of electronic states in response to a corresponding plurality of electrical stimuli applied by the control circuitry to the first and second terminals. For each different electronic state, the nanotube element provides an electrical pathway of different resistance between the first and second terminals.
1. A circuit for routing electrical signals, said circuit comprising:
a first plurality of wires;
a second plurality of wires; and
a plurality of nonvolatile nanotube block switches, wherein each nonvolatile nanotube block switch is in electrical communication with at least one wire of said first plurality of wires and at least one wire of said second plurality of wires, wherein each nonvolatile nanotube block switch is programmable to an on state and an off state, and wherein each nonvolatile nanotube block switch is dimensioned such that said on state has a resistance value suitable for electric signal flow between at least one wire of said first plurality of wires and at least one wire of said second plurality of wires.
2. The circuit of claim 1 , wherein said resistance value for said on state is less than a resistance value for said off state.
3. The circuit of claim 1 , wherein said resistance value for said on state is in a range of 50 to 100 Ohms.
4. The circuit of claim 1 , wherein said resistance value for said on state is in a range of 100 to 1000 Ohms.
5. The circuit of claim 1 , wherein said resistance value for said on state is in a range of 1 to 10 kiloOhms.
6. The circuit of claim 1 , wherein said resistance value for said on state matches the characteristic impedance of said wires within said first plurality of wires.
7. The circuit of claim 6 , wherein said first plurality of wires is a plurality of transmission lines.
8. The circuit of claim 1 , wherein said resistance value for said on state matches the characteristic impedance of said wires within said second plurality of wires.
9. The circuit of claim 8 , wherein said second plurality of wires is a plurality of transmission lines.
10. The circuit of claim 1 , wherein said circuit for routing electrical signals is incorporated into a programmable logic device.
11. A circuit for routing electrical signals, said circuit comprising:
a first wire;
a first plurality of wires; and
a plurality of nonvolatile nanotube block switches, wherein each nonvolatile nanotube block switch is in electrical communication with said first wire and at least one wire of said first plurality of wires, wherein each nonvolatile nanotube block switch is programmable to an on state and an off state, and wherein each nonvolatile nanotube block switch is dimensioned such that said on state has a resistance value suitable for electric signal flow between said first wire and at least one wire of said first plurality of wires.
12. The circuit of claim 11 , wherein said resistance value for said on state is less than a resistance value for said off state.
13. The circuit of claim 11 , wherein said resistance value for said on state is in a range of 50 to 100 Ohms.
14. The circuit of claim 11 , wherein said resistance value for said on state is in a range of 100 to 1000 Ohms.
15. The circuit of claim 11 , wherein said resistance value for said on state is in a range of 1 to 10 kiloOhms.
16. The circuit of claim 11 , wherein said resistance value for said on state matches the characteristic impedance of said first wire.
17. The circuit of claim 16 , wherein said first wire is a transmission line.
18. The circuit of claim 11 , wherein said resistance value for said on state matches the characteristic impedance of said wires within said first plurality of wires.
19. The circuit of claim 18 , wherein said first plurality of wires is a plurality of transmission lines.
20. The circuit of claim 11 , wherein said circuit for routing electrical signals is incorporated into a programmable logic device.
21. A method for routing electrical signals, comprising:
programming into an on state at least one nonvolatile nanotube block switch in a plurality of nonvolatile nanotube block switches by transmitting an electrical stimulus to said at least one nonvolatile nanotube block switch; and
transmitting electrical signals through at least one nonvolatile nanotube block switch in an on state in said plurality of nonvolatile nanotube block switches.
22. The method of claim 21 , further comprising initially programming into an off state all nonvolatile nanotube block switches in said plurality of nonvolatile nanotube block switches.
23. The method of claim 21 , further comprising programming into an off state at least one nonvolatile nanotube block switch in said plurality of nonvolatile nanotube block switches by transmitting an electrical stimulus to said at least one nanotube block switch.
24. The method of claim 23 , wherein said on state corresponds with a logic 1 and said off state corresponds with a logic 0.
25. The method of claim 24 , wherein said plurality of nonvolatile nanotube block switches are programmed into on states and off states in a combination that corresponds with a bit pattern.