Methods for passivating a carbonic nanolayer
View Patent ↗Methods for passivating a nanotube fabric layer within a nanotube switching device to prevent or otherwise limit the encroachment of an adjacent material layer are disclosed. In some embodiments, a sacrificial material is implanted within a porous nanotube fabric layer to fill in the voids within the porous nanotube fabric layer while one or more other material layers are applied adjacent to the nanotube fabric layer. Once the other material layers are in place, the sacrificial material is removed. In other embodiments, a non-sacrificial filler material (selected and deposited in such a way as to not impair the switching function of the nanotube fabric layer) is used to form a barrier layer within a nanotube fabric layer. In other embodiments, individual nanotube elements are combined with and nanoscopic particles to limit the porosity of a nanotube fabric layer.
1. A method for forming a passivated nanotube fabric layer, comprising:
forming a nanotube fabric layer, said nanotube fabric layer comprising a plurality of individual nanotube elements, over a substrate element; and
applying a porous dielectric material over said nanotube fabric layer such that said porous dielectric material substantially permeates the entire nanotube fabric layer while leaving the surface of said nanotube fabric layer at least partially exposed.
2. The method of claim 1 wherein said nanotube fabric layer is comprised of substantially all carbon nanotubes.
3. The method of claim 1 wherein said porous dielectric material is silicon dioxide aerogel.
4. The method of claim 1 wherein said porous dielectric material is porous silica.
5. The method of claim 1 wherein said porous dielectric material includes at least one void wherein at least two of said individual nanotube elements meet.
6. The method of claim 1 wherein said porous dielectric material provides structural support to said nanotube fabric layer.
7. The method of claim 1 wherein said porous dielectric material prevents an adjacent material layer from fully penetrating through said nanotube fabric layer.
8. The method of claim 1 wherein porous dielectric material does not adversely affect the switching function of the carbon nanotube layer.
9. The method of claim 1 further comprising etching away excess porous dielectric material in order to expose the top layer of said nanotube fabric layer.