IP Library Granted Patent US 7,859,385
Granted Patent B2
US 7,859,385 · App. 12/111,442 · Granted Dec 28, 2010

Resistive elements using carbon nanotubes

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Quick Facts
Patent No.
US 7,859,385
App. No.
12/111,442
Granted
Dec 28, 2010
Kind
B2
Abstract

Resistive elements include a patterned region of nanofabric having a predetermined area, where the nanofabric has a selected sheet resistance; and first and second electrical contacts contacting the patterned region of nanofabric and in spaced relation to each other. The resistance of the element between the first and second electrical contacts is determined by the selected sheet resistance of the nanofabric, the area of nanofabric, and the spaced relation of the first and second electrical contacts. The bulk resistance is tunable.

Claims (18)

1. A resistive element, comprising:

a patterned region of nanofabric with a predefined area and a pre-selected sheet resistance, the nanofabric having a pre-selected temperature coefficient of resistance (TCR); and

first and second electrical contacts contacting the patterned region of nanofabric and in spaced relation to each other,

wherein a total resistance of the resistive element between the first and second electrical contacts is determined at least by the contact resistance between the patterned region of nanofabric and each of the first and second electrical contacts, the pre-selected TCR of the nanofabric, and by the resistance of the patterned region of nanofabric; and

wherein the total resistance of the resistive element is tunable to a pre-selected total resistance.

2. The resistive element of claim 1 , wherein the contact resistance between the patterned region of nanofabric and each of the first and second electrical contacts substantially smaller than the resistance of the patterned region of nanofabric.

3. The resistive element of claim 1 , wherein the contact resistance between the patterned region of nanofabric and each of the first and second electrical contacts is variable over selected current and voltage values (I-V), and wherein over selected I-V values, the contact resistance varies linearly.

4. The resistive element of claim 1 , wherein the contact resistance between the patterned region of nanofabric and each of the first and second electrical contacts is variable over selected current and voltage values (I-V), and wherein over selected I-V values, the contact resistance varies non-linearly.

5. The resistive element of claim 1 , wherein the contact resistance between the patterned region of nanofabric and each of the first and second electrical contacts is selected according to the pre-selected TCR of the nanofabric.

6. The resistive element of claim 5 , tunable to a pre-selected TCR for the resistive element.

7. The resistive element of claim 1 , wherein the pre-selected sheet resistance of the patterned region of nanofabric is between approximately 100-Ohm/square and approximately 1 k-Ohm/square.

8. The resistive element of claim 1 , wherein the first and second electrical contacts comprise a semiconducting material.

9. The resistive element of claim 1 , wherein the first and second electrical contacts comprise a doped dielectric material.

10. The resistive element of claim 1 , wherein the pre-selected TCR comprises a negative value.

11. The resistive element of claim 1 , wherein the pre-selected TCR comprises a positive value.

12. The resistive element of claim 1 , wherein the contact resistance between the patterned region of nanofabric and the first electrical contact comprises a high value and the contact resistance between the patterned region of nanofabric and the second electrical contact comprises a low value.

13. The resistive element of claim 1 , further comprising at least one contact terminal wherein the first and second electrical contacts each comprises first and second layers, wherein the first layer contacts the nanofabric and is selected for low contact resistance with the nanofabric, and wherein the second layer contacts said at least one contact terminal and is selected for good electrical conduction with said at least one contact terminal.

14. The resistive element of claim 13 , wherein each of the first and second layers comprises at least one of tungsten, titanium, chromium, palladium, aluminum and copper.

Assignments (3)
RELEASE OF SECURITY INTEREST IN PATENTS Recorded Jul 8, 2021
From: SILICON VALLEY BANK
To: NANTERO, INC.
Reel/Frame 056790/0001 →
INTELLECTUAL PROPERTY SECURITY AGREEMENT Recorded Nov 11, 2020
From: NANTERO, INC.
To: SILICON VALLEY BANK
Reel/Frame 054383/0632 →
LICENSE Recorded Aug 20, 2008
From: NANTERO, INC.
To: LOCKHEED MARTIN CORPORATION
Reel/Frame 021411/0337 →