Integrated three-dimensional semiconductor system comprising nonvolatile nanotube field effect transistors
View Patent ↗Field programmable device (FPD) chips with large logic capacity and field programmability that are in-circuit programmable are described. FPDs use small versatile nonvolatile nanotube switches that enable efficient architectures for dense low power and high performance chip implementations and are compatible with low cost CMOS technologies and simple to integrate.
1. An integrated three-dimensional semiconductor system comprising:
a base level comprising a substrate;
at least one level above the substrate comprising an insulating layer and at least one nanotube field effect transistor on the insulating layer, each nanotube field effect transistor comprising:
a nanotube fabric, being substantially free of metallic nanotubes and having a plurality of semiconducting nanotubes, the nanotube fabric having a source region and a drain region, wherein the source region and drain region are in a spaced relation relative to one another and wherein the spaced relation defines a channel region in the nanotube fabric; and
a gate element electrically coupled to the channel region, wherein the gate element modulates the conductivity of the channel region such that a conductive pathway is formed or unformed between the source and drain in response to electrical stimulus.
2. The integrated three-dimensional semiconductor system of claim 1 , further comprising at least one interconnection network connecting a first circuit of the base level with a second circuit of the at least one level, and wherein the interconnect network comprises at least one of a fixed interconnection network and a programmable interconnection network.