Memory elements and cross point switches and arrays of same using nonvolatile nanotube blocks

1. A covered nanotube switch, comprising:

(a) a nanotube element comprising a nanotube fabric, the nanotube element having a top surface, a bottom surface, and a plurality of side surfaces;

(b) first and second conductive terminals in contact with the nanotube element, wherein the first conductive terminal is disposed on and substantially covering the entire top surface of the nanotube element, and wherein the second conductive terminal contacts at least a portion of the bottom surface of the nanotube element; and

(c) control circuitry in electrical communication with and capable of applying electrical stimulus to the first and second conductive terminals,

wherein the nanotube element is capable of switching between a plurality of electronic states in response to a corresponding plurality of electrical stimuli applied by the control circuitry to the first and second conductive terminals, and

wherein, for each different electronic state of the plurality of electronic states, the nanotube element provides an electrical pathway of corresponding different resistance between the first and second conductive terminals.

2. The covered nanotube switch of claim 1 , wherein the first conductive terminal is also disposed on and substantially covers at least one side surface of the plurality of side surfaces.

3. The covered nanotube switch of claim 1 , wherein the first conductive terminal is also disposed on and substantially covers the plurality of side surfaces.

4. The covered nanotube switch of claim 3 , further comprising an insulator layer in contact with the bottom surface of the nanotube element, the insulator layer and the second conductive terminal together substantially covering the entire bottom surface of the nanotube element.

5. The covered nanotube switch of claim 1 , further comprising an insulator layer in contact with at least one of the bottom surface of the nanotube element and one of the side surfaces of the nanotube element.

6. The covered nanotube switch of claim 5 , wherein the insulator layer comprises one of SiO 2 , SiN, and Al 2 O 3 .

7. The covered nanotube switch of claim 1 , further comprising a passivation layer overlying at least the first conductive terminal, the passivation layer substantially sealing the first and second conductive terminals and the nanotube element to the environment.

8. The covered nanotube switch of claim 7 , wherein the passivation layer comprises one of SiO 2 , SiN, Al 2 O 3 , polyimide, phosphosilicate glass oxide, polyvinylidine fluoride, polypropylene carbonate, and polyethylene carbonate.

9. The covered nanotube switch of claim 1 , wherein the second conductive terminal contacts substantially the entire bottom surface of the nanotube element.

10. The covered nanotube switch of claim 1 , wherein the first and second conductive terminals each comprise a conductive material independently selected from the group consisting of Ru, Ti, Cr, Al, Al(Cu), Au, Pd, Pt, Ni, Ta, W, Cu, Mo, Ag, In, Ir, Pb, Sn, TiAu, TiCu, TiPd, PbIn, TiW, RuN, RuO, TiN, TaN, CoSi x , and TiSi x .

11. A covered nanotube switch, comprising:

(a) a nanotube element comprising a nanotube fabric, the nanotube element having top and bottom surfaces;

(b) first and second conductive terminals in contact with the nanotube element and in spaced relation to each other;

(c) a first insulator layer in contact with the top surface of the nanotube element;

(d) a second insulator layer in contact with the bottom surface of the nanotube element,

wherein the first and second conductive terminals and the first and second insulator layers together substantially surround the nanotube element; and

(e) control circuitry in electrical communication with and capable of applying electrical stimulus to the first and second conductive terminals,

wherein the nanotube element is capable of switching between a plurality of electronic states in response to a corresponding plurality of electrical stimuli applied by the control circuitry to the first and second conductive terminals, and

wherein, for each different electronic state of the plurality of electronic states, the nanotube element provides an electrical pathway of corresponding different resistance between the first and second conductive terminals.

12. The covered nanotube switch of claim 11 , wherein at least a portion of the first insulator layer is separated from the top surface of the nanotube element by a gap.

13. The covered nanotube switch of claim 12 , further wherein at least a portion of the second insulator layer is separated from the bottom surface of the nanotube element by a gap.

14. The covered nanotube switch of claim 11 , wherein the first and second conductive terminals contact the bottom surface of the nanotube element and wherein the first insulator layer contacts the entire top surface of the nanotube element.

15. The covered nanotube switch of claim 11 , wherein the first and second conductive terminals contact the top surface of the nanotube element.

16. The covered nanotube switch of claim 11 , wherein the first conductive terminal contacts the bottom surface of the nanotube element and the second conductive terminal contacts the top surface of the nanotube element.

17. The covered nanotube switch of claim 11 , wherein the first and second insulator layers each comprise an insulative material independently selected from the group consisting of SiO 2 , SiN, and Al 2 O 3 .

18. The covered nanotube switch of claim 11 , wherein the first and second conductive terminals each comprise a conductive material independently selected from the group consisting of Ru, Ti, Cr, Al, Al(Cu), Au, Pd, Pt, Ni, Ta, W, Cu, Mo, Ag, In, Ir, Pb, Sn, TiAu, TiCu, TiPd, PbIn, TiW, RuN, RuO, TiN, TaN, CoSi x , and TiSi x .

19. A covered nanotube switch, comprising:

(a) a nanotube element comprising a nanotube fabric, the nanotube element having top and bottom surfaces;

(b) first and second conductive terminals in contact with the nanotube element and in spaced relation to each other;

(c) a first insulator layer arranged over and in spaced relation to the top surface of the nanotube element;

(d) a second insulator layer arranged under and in spaced relation to the bottom surface of the nanotube element,

wherein the first and second conductive terminals and the first and second insulator layers together substantially surround the nanotube element; and

(e) control circuitry in electrical communication with and capable of applying electrical stimulus to the first and second conductive terminals,

wherein the nanotube element is capable of switching between a plurality of electronic states in response to a corresponding plurality of electrical stimuli applied by the control circuitry to the first and second conductive terminals, and

wherein, for each different electronic state of the plurality of electronic states, the nanotube element provides an electrical pathway of corresponding different resistance between the first and second conductive terminals.

20. The covered nanotube switch of claim 19 , wherein the first and second insulator layers each comprise an insulative material independently selected from the group consisting of SiO 2 , SiN, and Al 2 O 3 .

21. The covered nanotube switch of claim 19 , wherein the first and second conductive terminals each comprise a conductive material independently selected from the group consisting of Ru, Ti, Cr, Al, Al(Cu), Au, Pd, Pt, Ni, Ta, W, Cu, Mo, Ag, In, Ir, Pb, Sn, TiAu, TiCu, TiPd, PbIn, TiW, RuN, RuO, TiN, TaN, CoSi x , and TiSi x .