Carbon based nonvolatile cross point memory incorporating carbon based diode select devices and MOSFET select devices for memory and logic applications
The present disclosure is directed toward carbon based diodes, carbon based resistive change memory elements, resistive change memory having resistive change memory elements and carbon based diodes, methods of making carbon based diodes, methods of making resistive change memory elements having carbon based diodes, and methods of making resistive change memory having resistive change memory elements having carbons based diodes. The carbon based diodes can be any suitable type of diode that can be formed using carbon allotropes, such as semiconducting single wall carbon nanotubes (s-SWCNT), semiconducting Buckminsterfullerenes (such as C60 Buckyballs), or semiconducting graphitic layers (layered graphene). The carbon based diodes can be pn junction diodes, Schottky diodes, other any other type of diode formed using a carbon allotrope. The carbon based diodes can be placed at any level of integration in a three dimensional (3D) electronic device such as integrated with components or wiring layers.
1. A diode, comprising:
a first multi-layer carbon block, said first multi-layer carbon block comprising at least two carbon layers, each carbon layer comprising multiple, interconnected carbon structures; and
a second multi-layer carbon block, said second multi-layer carbon block comprising at least two carbon layers, each carbon layer comprising multiple, interconnected carbon structures;
wherein said second multi-layer carbon block is in electrical communication with said first multi-layer carbon block;
wherein said first multi-layer carbon block and said second multi-layer carbon block comprise a diode carbon layer; and
wherein said diode carbon layer includes a pn junction between said first multi-layer carbon block and said second multi-layer carbon block.
2. The diode of claim 1 , wherein at least one of said first multi-layer carbon block and said second multi-layer carbon block is a nanotube fabric.
3. The diode of claim 2 , wherein said nanotube fabric comprises carbon nanotubes.
4. The diode of claim 2 , wherein said first multi-layer carbon block is a p-type nanotube fabric and said second multi-layer carbon block is an n-type nanotube fabric.
5. The diode of claim 1 , wherein at least one of said first multi-layer carbon block and said second multi-layer carbon block is a graphitic block.
6. The diode of claim 5 , wherein said first multi-layer carbon block is a p-type graphitic block and said second multi-layer carbon block is an n-type graphitic block.
7. The diode of claim 1 , wherein at least one of said first multi-layer carbon block and said second multi-layer carbon block is a buckyball block.
8. The diode of claim 7 , wherein said buckyball block comprises Buckminsterfullerenes C 60 .
9. The diode of claim 7 , wherein said first multi-layer carbon block is a p-type buckyball block and said second multi-layer carbon block is an n-type buckyball block.
10. The diode of claim 1 , wherein said first multi-layer carbon block is an anode of said diode and said second multi-layer carbon block is a cathode of said diode.
11. The diode of claim 1 , wherein said conductive path is directional.
12. A diode, comprising:
a conductive layer; and
a multi-layer carbon block, said multi-layer carbon block comprising at least two carbon layers, each carbon layer comprising multiple, interconnected carbon structures;
wherein said multi-layer carbon block is in electrical contact with said conductive layer;
wherein said conductive layer and said multi-layer carbon block comprise a diode carbon layer; and
wherein said diode carbon layer includes a Schottky junction between said conductive layer and said multi-layer carbon block.
13. The diode of claim 12 , wherein said multi-layer carbon block is a nanotube fabric.
14. The diode of claim 13 , wherein said nanotube fabric comprises carbon nanotubes.
15. The diode of claim 13 , wherein said multi-layer carbon block is at least one of a p-type nanotube fabric and an n-type nanotube fabric.
16. The diode of claim 12 , wherein said multi-layer carbon block is a graphitic block.
17. The diode of claim 16 , wherein said multi-layer carbon block is at least one of a p-type graphitic block and an n-type graphitic block.
18. The diode of claim 12 , wherein said multi-layer carbon layer is a buckyball block.
19. The diode of claim 18 , wherein said buckyball block comprises Buckminsterfullerenes C 60 .
20. The diode of claim 18 , wherein said multi-layer carbon block is at least one of a p-type buckyball block and an n-type buckyball block.
21. The diode of claim 12 , wherein said multi-layer carbon block is at least one of an anode of said diode and a cathode of said diode.
22. The diode of claim 12 , wherein said conductive path is directional.