Devices and methods for programming resistive change elements
Devices and methods for programming resistive change elements using an electrical stimulus are disclosed. According to some aspects of the present disclosure the devices and methods program at least one resistive change element within at least one resistive change element cell in a resistive change element array using an electrical stimulus having a voltage level greater than a steady state voltage level that can be supplied by a power supply.
1. A resistive change element device, comprising:
a plurality of resistive change element cells;
a power supply having a first output configured to generate a first voltage waveform in response to a current stimulus and a second output configured to generate a second voltage waveform in response to said current stimulus, wherein said power supply is configured so that said first output has an inductance sized for generating said first voltage waveform and a capacitance sized for generating said first voltage waveform, wherein said power supply is configured so that said second output has an inductance sized for generating said second voltage waveform and a capacitance sized for generating said second voltage waveform, and wherein said first voltage waveform oscillates around a first voltage and said second voltage waveform oscillates around a second voltage;
a current stimulus circuit electrically connected to said first output and said second output, wherein said current stimulus circuit is configured to create said current stimulus by changing an amount of current flowing from said first output and an amount of current flowing into said second output; and
an address decoder and driver circuit electrically connected to said plurality of resistive change element cells, said first output, and said second output, wherein said address decoder and driver circuit is configured to transmit at least part of said first voltage waveform and at least part of said second voltage waveform to at least one resistive change element cell in said plurality of resistive change element cells.
2. The resistive change element device of claim 1 , wherein said current stimulus circuit comprises a field effect transistor.
3. The resistive change element device of claim 2 , wherein said current stimulus circuit further comprises a resistor electrically connected to said field effect transistor.
4. The resistive change element device of claim 1 , wherein said plurality of resistive change element cells are a plurality of 1T1R resistive change element cells.
5. The resistive change element device of claim 1 , wherein said plurality of resistive change element cells are a plurality of 1D1R resistive change element cells.
6. The resistive change element device of claim 1 , wherein said plurality of resistive change element cells are a plurality of 1-R resistive change element cells.
7. A resistive change element device, comprising:
a plurality of resistive change element cells;
a power supply having a first output configured to generate a first voltage waveform in response to a current stimulus and a second output configured to supply a second voltage, wherein said power supply is configured so that said first output has an inductance sized for generating said first voltage waveform and a capacitance sized for generating said first voltage waveform, and wherein said first voltage waveform oscillates around a first voltage;
a current stimulus circuit electrically connected to said first output and said second output, wherein said current stimulus circuit is configured to create said current stimulus by changing an amount of current flowing from said first output and an amount of current flowing into said second output; and
an address decoder and driver circuit electrically connected to said plurality of resistive change element cells, said first output, and said second output, wherein said address decoder and driver circuit is configured to transmit at least part of said first voltage waveform and said second voltage to at least one resistive change element cell in said plurality of resistive change element cells.
8. The resistive change element device of claim 7 , wherein said current stimulus circuit comprises a field effect transistor.
9. The resistive change element device of claim 8 , wherein said current stimulus circuit further comprises a resistor electrically connected to said field effect transistor.
10. The resistive change element device of claim 7 , wherein said plurality of resistive change element cells are a plurality of 1T1R resistive change element cells.
11. The resistive change element device of claim 7 , wherein said plurality of resistive change element cells are a plurality of 1D1R resistive change element cells.
12. The resistive change element device of claim 7 , wherein said plurality of resistive change element cells are a plurality of 1-R resistive change element cells.
13. A method for programming a resistive change element, said method comprising:
generating a first voltage waveform and a second voltage waveform in response to a current stimulus, wherein said first voltage waveform oscillates around a first voltage and said second voltage waveform oscillates around a second voltage; and
transmitting at least part of said first voltage waveform and at least part of said second voltage waveform to a resistive change element cell to apply an electrical stimulus to said resistive change element cell, wherein said electrical stimulus has a voltage greater than a difference between said first voltage and said second voltage.
14. The method for programming a resistive change element of claim 13 , wherein said first voltage waveform and said second voltage waveform are approximately 180 degrees out of phase.
15. The method for programming a resistive change element of claim 13 , wherein said current stimulus has a plurality of current spikes.
16. The method for programming a resistive change element of claim 13 , wherein said first voltage is a first steady state voltage and said second voltage is a second steady state voltage.
17. The method for programming a resistive change element of claim 16 , wherein said first steady state voltage is 2.5 volts and said second steady state voltage is 0 volts.
18. The method for programming a resistive change element of claim 13 , wherein said electrical stimulus is a periodic electrical stimulus.
19. The method for programming a resistive change element of claim 13 , wherein said resistive change element cell comprises a nanotube fabric layer.
20. A method for programming a resistive change element, said method comprising:
generating a first voltage waveform in response to a current stimulus, wherein said first voltage waveform oscillates around a first voltage; and
transmitting at least part of said first voltage waveform and a second voltage to a resistive change element cell to apply an electrical stimulus to said resistive change element cell, wherein said second voltage has a substantially constant voltage level, and wherein said electrical stimulus has a voltage greater than a difference between said first voltage and said second voltage.