IP Library Granted Patent US 7,416,993
Granted Patent B2
US 7,416,993 · App. 10/936,119 · Granted Aug 26, 2008

Patterned nanowire articles on a substrate and methods of making the same

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 7,416,993
App. No.
10/936,119
Granted
Aug 26, 2008
Kind
B2
Abstract

Nanowire articles and methods of making the same are disclosed. A conductive article includes a plurality of inter-contacting nanowire segments that define a plurality of conductive pathways along the article. The nanowire segments may be semiconducting nanowires, metallic nanowires, nanotubes, single walled carbon nanotubes, multi-walled carbon nanotubes, or nanowires entangled with nanotubes. The various segments may have different lengths and may include segments having a length shorter than the length of the article. A strapping material may be positioned to contact a portion of the plurality of nanowire segments. The strapping material may be patterned to create the shape of a frame with an opening that exposes an area of the nanowire fabric. Such a strapping layer may also be used for making electrical contact to the nanowire fabric especially for electrical stitching to lower the overall resistance of the fabric.

Claims (58)

1. A method of making a conductive article on a substrate, comprising:

forming a nanowire fabric on the substrate;

defining the nanowire fabric to have a pattern; and

forming a strapping layer that contacts at least a longitudinally-extending portion of the nanowire fabric.

2. The method of claim 1 , wherein the nanowire fabric is formed by growing the nanowire fabric on the substrate using a catalyst.

3. The method of claim 1 , wherein the nanowire fabric is formed by spraying an aerosol having nanowires onto a surface of the substrate.

4. The method of claim 1 , wherein the nanowire fabric is formed by applying a solution of suspended nanowires on the substrate.

5. The method of claim 4 , wherein the solution of suspended nanowires is applied by a spin-coating technique.

6. The method of claim 1 , further comprising forming an intermediate layer between the nanowire fabric and the strapping material.

7. The method of claim 6 , wherein the strapping layer is a metal layer and the intermediate layer is a semiconductor layer.

8. The method of claim 7 , further comprising annealing the metal layer and the intermediate layer to form a conducting composite layer.

9. The method of claim 8 , wherein the conducting composite layer is a metal silicide.

10. The method of claim 1 , wherein the strapping layer contacts the periphery of the nanowire fabric.

11. The method of claim 1 , further comprising removing a portion of the strapping layer to expose a portion of the nanowire fabric and wherein removing includes applying an etchant to the strapping layer.

12. The method of claim 1 , further comprising removing a portion of the strapping layer to expose a portion of the nanowire fabric and wherein removing includes lithographically patterning the strapping layer.

13. The method of claim 1 , further comprising removing a portion of the strapping layer to expose a portion of the nanowire fabric and wherein removing includes patterning the strapping layer in the shape of a frame with an opening that exposes an area of the nanowire fabric.

14. The method of claim 1 , wherein the defining further comprises applying an etchant to the nanowire fabric.

15. The method of claim 1 , wherein the defining further comprises lithographically patterning the nanowire fabric.

16. The method of claim 1 , wherein the nanowire fabric includes semiconducting nanowires.

17. The method of claim 1 , wherein the nanowire fabric includes metallic nanowires.

18. The method of claim 1 , wherein the nanowire fabric includes nanotubes.

19. The method of claim 18 , wherein the nanotubes include single-walled carbon nanotubes.

20. The method of claim 18 , wherein the nanotubes include multi-walled carbon nanotubes.

21. The method of claim 1 , wherein the nanowire fabric includes nanowires entangled with nanotubes.

22. A method of making a conductive article on a substrate, comprising:

forming a nanowire fabric on the substrate;

defining the nanowire fabric to have a pattern; and

forming a strapping layer having a frame shape that vertically contacts the nanowire fabric and which has an area exposing a portion of the nanowire fabric.

23. A method of making a conductive article on a substrate, comprising:

forming a nanowire fabric on the substrate;

defining the nanowire fabric to have a pattern that corresponds to the conductive article;

forming a strapping layer that vertically contacts the nanowire fabric; and

removing a portion of the strapping layer to expose a portion of the nanowire fabric.

24. A method of making a conductive article on a substrate, comprising:

forming on the substrate a conducting layer that includes at least two nanomaterials, each having a different composition;

immediately subsequent to forming, defining the conducting layer to have a pattern that corresponds to the conductive article; and

forming a metal layer that contacts at least a portion of the conducting layer.

25. The method of claim 24 , wherein the conducting layer is formed by growing the conducting layer on the substrate using a catalyst.

26. The method of claim 24 , wherein the conducting layer is formed by spraying an aerosol having nanoclusters onto a surface of the substrate.

27. The method of claim 24 , wherein the conducting layer is formed by applying a solution of suspended nanomaterials on the substrate.

28. The method of claim 27 , wherein the solution of suspended nanomaterials is applied by a spin-coating technique.

29. The method of claim 27 , wherein the solution is applied by dipping the substrate into the solution.

30. The method of claim 24 , further comprising forming an intermediate layer between the conducting layer and the metal layer.

31. The method of claim 30 , wherein the intermediate layer is a semiconductor layer.

32. The method of claim 31 , further comprising annealing the metal layer and the intermediate layer to form a conducting composite layer.

33. The method of claim 32 , wherein the conducting composite layer is a metal silicide.

34. The method of claim 24 , wherein the strapping layer contacts the periphery of the conducting layer.

35. The method of claim 24 , further comprising removing a portion of the strapping layer to expose a portion of the conducting layer wherein removing includes applying an etchant to the strapping layer.

36. The method of claim 24 , further comprising removing a portion of the strapping layer to expose a portion of the conducting layer wherein removing includes patterning the strapping layer in the shape of a frame with an opening that exposes an area of the conducting layer.

37. The method of claim 24 , wherein the defining further comprises applying an etchant to the conducting layer.

38. The method of claim 24 , wherein the conducting layer includes semiconducting nanomaterials.

39. The method of claim 24 , wherein the conducting layer includes metallic nanomaterials.

40. A method of making a conductive article on a substrate, comprising:

forming a conducting layer that includes nanomaterials on the substrate;

immediately subsequent to forming, defining the conducting layer to have a pattern with two opposite ends of an extension that corresponds to the conductive article; and

forming a metal layer that directly contacts portions of the conducting layer at said opposite ends so that electrical stimulus may flow from a first to a second of said opposite ends, along the conducting layer.

41. The method of claim 40 , further comprising removing a portion of the metal layer to expose a portion of the conducting layer wherein removing includes lithographically patterning the metallic layer.

42. The method of claim 40 , wherein the defining further comprises lithographically patterning the conducting layer.

Assignments (4)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 8, 2021
From: NANTERO, INC.
To: ZEON CORPORATION
Reel/Frame 056789/0932 →
RELEASE OF SECURITY INTEREST IN PATENTS Recorded Jul 8, 2021
From: SILICON VALLEY BANK
To: NANTERO, INC.
Reel/Frame 056790/0001 →
CONFIRMATORY LICENSE Recorded Apr 23, 2021
From: NANTERO, INC.
To: ZEON CORPORATION
Reel/Frame 056032/0549 →
INTELLECTUAL PROPERTY SECURITY AGREEMENT Recorded Nov 11, 2020
From: NANTERO, INC.
To: SILICON VALLEY BANK
Reel/Frame 054383/0632 →