Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same

1. A non-volatile nanotube switch, comprising:

a first conductive terminal;

a nanotube block comprising a multilayer nanotube fabric, at least a portion of the nanotube block being positioned over and in contact with at least a portion of the first conductive terminal;

a second conductive terminal, at least a portion of the second conductive terminal being positioned over and in contact with at least a portion of the nanotube block, wherein the nanotube block is constructed and arranged to prevent direct physical and electrical contact between the first and second conductive terminals; and

control circuitry in electrical communication with and capable of applying electrical stimulus to the first and second conductive terminals,

wherein the nanotube block is capable of switching between a plurality of electronic states in response to a corresponding plurality of electrical stimuli applied by the control circuitry to the first and second conductive terminals, and

wherein, for each different electronic state of the plurality of electronic states, the nanotube block provides an electrical pathway of corresponding different resistance between the first and second conductive terminals.

2. The switch of claim 1 , wherein substantially the entire nanotube block is positioned over substantially the entire first conductive terminal, and wherein substantially the entire second conductive terminal is positioned over substantially the entire nanotube block.

3. The switch of claim 2 , wherein the first and second conductive terminals and the nanotube block each have a substantially circular lateral shape.

4. The switch of claim 2 , wherein the first and second conductive terminals and the nanotube block each have a substantially rectangular lateral shape.

5. The switch of claim 2 , wherein the first and second conductive terminals and the nanotube block each have a lateral dimension between about 200 nm and about 22 nm.

6. The switch of claim 2 , wherein the first and second conductive terminals and the nanotube block each have a lateral dimension between about 22 nm and about 10 nm.

7. The switch of claim 2 , wherein the first and second conductive terminals and the nanotube block each have lateral dimension of less than about 10 nm.

8. The switch of claim 1 , wherein the nanotube block has a thickness between about 10 nm and about 200 nm.

9. The switch of claim 1 , wherein the nanotube block has a thickness between about 10 nm and about 50 nm.

10. The switch of claim 1 , wherein the control circuitry includes a semiconductor field effect transistor in contact with the first conductive terminal.

11. The switch of claim 1 , wherein the first and second conductive terminals each comprise a conductive material independently selected from the group consisting of Ru, Ti, Cr, Al, Al(Cu), Au, Pd, Pt, Ni, Ta, W, Cu, Mo, Ag, In, Ir, Pb, Sn, TiAu, TiCu, TiPd, PbIn, TiW, RuN, RuO, TiN, TaN, CoSi x , and TiSi x .

12. The switch of claim 1 , wherein the nanotube block further comprises a porous dielectric material.

13. The switch of claim 12 , wherein the porous dielectric material comprises one of a spin-on glass and a spin-on low-κ dielectric.

14. The switch of claim 1 , wherein the nanotube block further comprises a nonporous dielectric material.

15. The switch of claim 14 , wherein the nonporous dielectric material comprises hafnium oxide.