Methods of making sealed resistive change elements
Methods for scaling dimensions of resistive change elements, resistive change element arrays of scalable resistive change elements, and sealed resistive change elements are disclosed. According to some aspects of the present disclosure the methods for scaling dimensions of resistive change elements and the resistive change element arrays of scalable resistive change elements reduce the impact of overlapping materials on the switching characteristics of resistive change elements. According to some aspects of the present disclosure the methods for scaling dimensions of resistive change elements include sealing surfaces of resistive change elements. According to some aspects of the present disclosure the methods for scaling dimensions of resistive change elements include forming barriers to copper migration in a copper back end of the line.
1. A method of making a sealed resistive change element, comprising:
forming a resistive change element above a dielectric, wherein said resistive change element has a bottom electrode having a horizontal cross-sectional shape, a resistive change material layer having a horizontal cross-sectional shape, and a top electrode having a horizontal cross-sectional shape; and
backsputtering particles from said dielectric to form a thin dielectric sidewall film having a portion formed around said resistive change material layer and wherein said portion of said thin dielectric sidewall film formed around said resistive change material layer has a ring shape based on said horizontal cross-sectional shape of said resistive change material layer.
2. The method of claim 1 , wherein said backsputtering step includes supplying ions with a primarily vertical velocity toward a surface of said dielectric to dislodge said particles of said dielectric.
3. The method of claim 2 , wherein said ions are supplied by a highly directional plasma source.
4. The method of claim 2 , wherein said ions comprise inert gas ions.
5. The method of claim 1 , wherein said forming step includes using an etch technique having a significant physical etch component and said backsputtering step includes using said etch technique having a significant physical etch component with inert gas ions.
6. The method of claim 1 , wherein said resistive change material layer is a nanotube fabric layer.
7. The method of claim 6 , wherein said nanotube fabric layer has a layer of ordered nanotubes at a top of said nanotube fabric layer.
8. A method of making a sealed resistive change element, comprising:
forming a resistive change element, wherein said resistive change element has a bottom electrode having a horizontal cross-sectional shape, a resistive change material layer having a horizontal cross-sectional shape, and a top electrode having a horizontal cross-sectional shape; and
sputtering particles with a primarily vertical velocity from a dielectric located above said resistive change element to form a thin dielectric sidewall film having a portion formed around said resistive change material layer, and wherein said portion of said thin dielectric sidewall film formed around said resistive change material layer has a ring shape based on said horizontal cross-sectional shape of said resistive change material layer.
9. The method of claim 8 , wherein said sputtering step includes sputtering particles with a primarily vertical velocity from a collimated source.
10. The method of claim 9 , wherein said collimated source includes a collimator between said dielectric and said resistive change element.
11. The method of claim 8 , wherein said sputtering step includes adjusting the velocity of particles using magnetic fields.
12. The method of claim 8 , wherein said resistive change material layer is a nanotube fabric layer.
13. The method of claim 12 , wherein said nanotube fabric layer has a layer of ordered nanotubes at a top of said nanotube fabric layer.
14. A method of making a sealed resistive change element, comprising:
forming a bottom electrode having a horizontal cross-sectional shape;
forming a resistive change material layer having a horizontal cross-sectional shape;
forming a top electrode having a horizontal cross-sectional shape; and
forming a thin dielectric sidewall film having a portion formed around said resistive change material layer, wherein said portion of said thin dielectric sidewall film formed around said resistive change material layer has a ring shape based on said horizontal cross-sectional shape of said resistive change material layer, and wherein said forming a thin dielectric sidewall film step includes depositing at least one dielectric material to form said thin dielectric sidewall film while forming said resistive change material layer.
15. The method of claim 14 , wherein said forming a thin dielectric sidewall film step includes:
introducing at least one material that reacts with a reactant gas;
introducing at least one reactant gas; and
depositing from a reaction of said at least one material that reacts with a reactant gas and said at least one reactant gas at least one dielectric material to form said thin dielectric sidewall film.
16. The method of claim 15 , wherein said introducing at least one material that reacts with a reactant gas step includes introducing at least one material that reacts with a reactant gas as a result of forming said resistive change material layer.
17. The method of claim 15 , wherein said introducing at least one material that reacts with a reactant gas step includes introducing at least one gas that reacts with a reactant gas.
18. The method of claim 14 , wherein said resistive change material layer is a nanotube fabric layer.
19. The method of claim 14 , wherein said nanotube fabric layer has a layer of ordered nanotubes at a top of said nanotube fabric layer.