Non-volatile electromechanical field effect devices and circuits using same and methods of forming same
View Patent ↗Non-volatile field effect devices and circuits using same. A non-volatile field effect device includes a source, drain and gate with a field-modulatable channel between the source and drain. Each of the source, drain, and gate have a corresponding terminal. An electromechanically-deflectable, nanotube switching element is electrically positioned between one of the source, drain and gate and its corresponding terminal. The others of the source, drain and gate are directly connected to their corresponding terminals. The nanotube switching element is electromechanically-deflectable in response to electrical stimulation at two control terminals to create one of a non-volatile open and non-volatile closed electrical communication state between the one of the source, drain and gate and its corresponding terminal.
1. A method of forming a field effect device, comprising:
providing a gate, a source, and a drain, with a channel between the source and the drain; and
providing a nanotube switch comprising a nanotube element, a control gate, and a release gate;
wherein the nanotube element is deflectable to form a pathway between the control gate and the gate in response to a first electrical state at the control gate and the release terminal, and deflectable to form a pathway between the control gate and the release gate in response to a second electrical state at the control gate and the release terminal, and
wherein the nanotube element is laterally offset from the channel.
2. The method claim 1 , wherein the nanotube element comprises a nonwoven nanotube fabric.
3. The method of claim 1 , wherein the nanotube switch is disposed over a portion of the gate.
4. The method of claim 1 , wherein the release gate includes an insulator on a surface facing the nanotube element.
5. The method of claim 1 wherein, if the nanotube element is deflected to form a pathway between the control gate and the gate, the channel is capable of conducting electricity between the source and the drain.
6. The method of claim 1 wherein, if the nanotube element is deflected to form a pathway between the control gate and the release gate, the channel is incapable of conducting electricity between the source and the drain.
7. The method of claim 1 wherein, if the nanotube element is deflected to form a pathway between the control gate and the gate, the nanotube element stores a first logic state.
8. The method of claim 7 , wherein the first logic state is nonvolatile.
9. The method of claim 7 , wherein, if the nanotube element is deflected to form a pathway between the control gate and the release gate, the nanotube element stores a second logic state.
10. The method of claim 9 , wherein the second logic state is nonvolatile.
11. A method of forming a memory array capable of storing multiple memory states, the method comprising:
providing a plurality of memory devices, each memory device comprising:
a gate, a source, and a drain, with a channel between the source and the drain; and
a nanotube switch comprising a nanotube element, a control gate in electrical contact with the nanotube switch, and a release gate,
wherein the nanotube switch is programmable into a first memory state in which the nanotube element deflects into electrical contact with the gate in response to a first electrical state at the control gate and the release gate,
wherein the nanotube switch is programmable into a second memory state in which the nanotube element deflects out of electrical contact with the gate in response to a second electrical state at the control gate and the release gate, and
wherein the nanotube element is laterally offset from the channel.
12. The method of claim 11 wherein, if the nanotube switch is programmed into the first memory state, the channel is capable of conducting electricity between the source and the drain in response to electrical stimulus at the control gate.
13. The method of claim 11 wherein, if the nanotube switch is programmed into the second memory state, the channel is incapable of conducting electricity between the source and the drain in response to electrical stimulus at the control gate.