Apparatus, system, and method for amplifying a signal, and applications thereof
View Patent ↗An upstream amplifier is integrated on a substrate with a digital-to-analog converter (DAC) to form an integrated circuit. In an embodiment, a low-pass filter is also integrated on the substrate. The output signal level of the upstream amplifier is controllable. In embodiments, fine adjustments are made to the output signal level of the upstream amplifier by varying a bias current of the DAC. A software control bit is used to switch between a power-on mode of operation and a power-down mode of operation. The upstream amplifier transmits in a burst mode. The power consumption of the upstream amplifier scales with the amplifier's output signal level. A high degree of matching is attained between the positive and negative paths of the upstream amplifier. This provides high immunity from common-mode disturbances such as substrate noise, clock spurs, and glitches caused by a gain change.
1. An amplifier for amplifying a current signal, comprising:
a substrate;
a plurality of switched current mirrors disposed on the substrate;
a plurality of switching transistors, disposed on the substrate, that enable or disable the plurality of switched current mirrors; and
an input network, disposed on the substrate, that includes
a transistor amplifier having a positive input port, a negative input port, and an output port,
a transistor having a gate, a source, and a drain, wherein
the gate of the transistor is coupled to the output port of the transistor amplifier,
the source of the transistor is coupled to the negative input port of the transistor amplifier and a drain of an input transistor of the plurality of switched current mirrors, and
the drain of the transistor is coupled to a gate of the input transistor of the plurality of switched current mirrors, and
a plurality of switched current sources, configured for coupling to the drain of the transistor, wherein the plurality of switched current sources are used to adjust a bias current in the input network.
2. The amplifier of claim 1 , wherein each of the plurality of switched current mirrors is enabled or disabled using a selected one of the plurality of switching transistors.
3. The amplifier of claim 2 , wherein course gain changes are made by varying the number of switched current mirrors that are enabled.
4. The amplifier of claim 1 , wherein the amplifier has a power-on mode of operation and a power-down mode of operation, and a software control bit is used to switch between the power-on mode of operation and the power-down mode of operation.
5. The amplifier of claim 1 , wherein the amplifier operates in a burst mode.
6. The amplifier of claim 1 , further comprising:
an internal transistor amplifier;
a level shifter coupled to an input port of the internal transistor amplifier; and
a switch used to couple the level shifter to a voltage source or to a current sink to ground, wherein the amplifier produces an output current proportional to an input current when the switch couples the level shifter to the current sink to ground, and wherein the output current is turned off when the switch couples the level shifter to the voltage source.
7. The amplifier of claim 1 , wherein at least one of the plurality of switched current mirrors is always enabled during an output burst-on state of the amplifier.
8. The amplifier of claim 1 , wherein the plurality of switched current mirrors are controlled using a thermometer code.
9. The amplifier of claim 1 , wherein the amplifier is a type class-A amplifier.
10. The amplifier of claim 1 , wherein the amplifier is a type class-AB amplifier.
11. The amplifier of claim 1 , wherein the amplifier power consumption scales with the amplifier output level.
12. The amplifier of claim 1 , wherein fine gain changes are made by adjusting the bias current.
13. The amplifier of claim 1 , wherein the amplifier is differential.
14. The amplifier of claim 1 , wherein the amplifier includes electrostatic discharge protection on an input port of the amplifier.
15. The amplifier of claim 14 , wherein the electrostatic discharge protection comprises a first grounded-gate NMOS device in parallel with a second grounded-gate NMOS device.
16. The amplifier of claim 15 , wherein the first grounded-gate NMOS device is a thin-gate-oxide device and the second grounded-gate NMOS device is a thick-gate-oxide device.
17. The amplifier of claim 1 , wherein the amplifier includes electrostatic discharge protection on an output port of the amplifier.