Chambers, systems, and methods for electrochemically processing microfeature workpieces

1. An electrochemical deposition chamber for depositing material onto microfeature workpieces, the chamber comprising:

a processing unit including a first flow system configured to convey a flow of a first processing fluid to a microfeature workpiece at a processing site;

an electrode unit including first and second electrode compartments and a second flow system separate from the first flow system, the second flow system being configured to convey a flow of a second processing fluid through the electrode compartment;

a barrier between the processing unit and the electrode unit that prevents nonionic species from passing between the first and second flow systems;

a first electrode in the first electrode compartment and a second electrode in the second electrode compartment and arranged concentrically with the first electrode, with the first and second electrodes substantially equally spaced apart from the barrier; and

the processing unit further comprising a field shaping module, the field shaping module of a dielectric material and having a first opening facing a first section of the processing site through which ions influenced by the first electrode can pass and a second opening facing a second section of the processing site through which ions influenced by the second electrode can pass.

2. The chamber of claim 1 wherein the barrier is canted relative to the processing unit to vent gas from the second processing fluid.

3. The chamber of claim 1 , further comprising a barrier unit coupled tote processing and electrode units, the barrier unit including the barrier.

4. An electrochemical processor comprising:

a processing unit;

a field shaping module in the processing unit having a first partition and a second partition around the first partition, and a first opening within the first partition and a second opening between the first and second partitions;

an electrode unit attached to the processing unit;

first and second electrode compartments in the electrode unit;

a first electrode in the first electrode compartment and a second electrode in the second electrode compartment, with the second electrode concentric and substantially vertically aligned with the first electrode;

first and second channels extending from the first and second electrode compartments to the first and second openings, respectively; and

a flat nonporous barrier in the first and second channels, between the processing unit and the electrode unit.

5. The processor of claim 4 with the first and second electrodes each having a generally rectangular cross section including a top surface and a bottom surface, and with the top surface of the first electrode at substantially the seine vertical position as the top surface of the second electrode.

6. The processor of claim 5 with the bottom surface of the first and second electrodes positioned at a bottom end of the first and second electrode compartments, respectively.

7. The processor of claim 4 with the second electrode substantially entirely circumferentially surrounding the first electrode.

8. The processor of claim 4 with the nonporous barrier comprising a single membrane.

9. The processor of claim 4 with the nonporous barrier comprising a membrane oriented in a near horizontal plane.