Semiconductor device and method of manufacturing the same, circuit board, and electronic instrument
View Patent ↗A semiconductor device includes a semiconductor substrate in which an integrated circuit is formed, a through-hole electrode which is formed through first and second surfaces of the semiconductor substrate and includes a first projecting section which projects from the first surface and a second projecting section which projects from the second surface, and an insulating layer which is formed in a region around the second projecting section except a part of the second surface so as to extend outward beyond an outer edge of the first projecting section.
1. A semiconductor device comprising:
a semiconductor substrate which includes a first surface in which an integrated circuit is formed, and a second surface opposite to the first surface;
a through-hole electrode which is formed through the semiconductor substrate, and includes a first projecting section which projects from the first surface and a second projecting section which projects from the second surface; and
an insulating layer which is formed in a region around the second projecting section except a part of the second surface so as to extend outward beyond an outer edge of the first projecting section, the insulating layer is formed to become thinner as a distance from the second projecting section increases.
2. The semiconductor device as defined in claim 1 , wherein an outer edge of the second projecting section is smaller than the outer edge of the first projecting section.
3. The semiconductor device as defined in claim 1 , wherein a soldering material is provided on the first projecting section.
4. The semiconductor device as defined in claim 1 , wherein the insulating layer is formed so that an outline of the insulating layer has a similar shape to an outline of the first projecting section.
5. The semiconductor device as defined in claim 1 , wherein the insulating layer is formed so that an upper surface of the thickest portion of the insulating layer is on the same level as an upper surface of the second projecting section.
6. The semiconductor device as defined in claim 1 , wherein the insulating layer is formed so that the thickest portion of the insulating layer is lower than the second projecting section.
7. A semiconductor device comprising:
a plurality of the semiconductor devices as defined in claim 1 which are stacked, wherein two adjacent semiconductor devices among the plurality of semiconductor devices are electrically connected through the through-hole electrodes.
8. A circuit board on which the semiconductor device as defined in claim 1 is mounted.
9. An electronic instrument comprising the semiconductor device as defined in claim 1 .
10. The semiconductor device as defined in claim 1 , wherein the part of the second surface is exposed from the insulating layer.
11. A method of manufacturing a semiconductor device, comprising:
(a) forming a through-hole electrode through a semiconductor substrate which includes a first surface in which an integrated circuit is formed and a second surface opposite to the first surface, the through-hole electrode including a first projecting section which projects from the first surface and a second projecting section which projects from the second surface; and
(b) forming an insulating layer in a region around the second projecting section except a part of the second surface so as to extend outward beyond an outer edge of the first projecting section,
wherein, in the step (b), the insulating layer is formed to become thinner as a distance from the second projecting section increases.
12. The method of manufacturing a semiconductor device as defined in claim 11 , wherein an outer edge of the second projecting section is smaller than the outer edge of the first projecting section.
13. The method of manufacturing a semiconductor device as defined in claim 11 ,
wherein a plurality of the integrated circuits are formed in the semiconductor substrate, and the through-hole electrode is formed in each of the integrated circuits, and
wherein the method further includes cutting the semiconductor substrate.
14. The method of manufacturing a semiconductor device as defined in claim 11 , further comprising:
stacking a plurality of the semiconductor substrates for which the steps (a) and (b) have been completed, and electrically connecting two of the semiconductor substrates adjacent to each other through the through-hole electrodes.
15. The method of manufacturing a semiconductor device as defined in claim 14 , further comprising:
injecting an insulating material between the two semiconductor substrates adjacent to each other.
16. The method of manufacturing a semiconductor device as defined in claim 15 , wherein the insulating material is formed of the same material as a material of the insulating layer.
17. The method of manufacturing a semiconductor device as defined in claim 11 , wherein the step (a) further includes providing a soldering material on the first projecting section.
18. The method of manufacturing a semiconductor device as defined in claim 11 , wherein, in the step (b), the insulating layer is formed so that an outline of the insulating layer has a similar shape to an outline of the first projecting section.
19. The method of manufacturing a semiconductor device as defined in claim 11 , wherein, in the step (b), the insulating layer is formed so that an upper surface of the thickest portion of the insulating layer is on the same level as an upper surface of the second projecting section.
20. The method of manufacturing a semiconductor device as defined in claim 11 , wherein, in the step (b), the insulating layer is formed so that the thickest portion of the insulating layer is lower than the second projecting section.