Method of forming a device substrate and semiconductor package including a pyramid contact
View Patent ↗A semiconductor device substrate has fine terminals with a small pitch and is able to be easily produced at a low cost without using a special process. A mounting terminal has a pyramidal shape and extending between a front surface and a back surface of a silicon substrate. An end of the mounting terminal protrudes from the back surface of the silicon substrate. A wiring layer is formed on the front surface of the silicon substrate. The wiring layer includes a conductive layer that is electrically connected to the mounting terminal.
1. A method of manufacturing a semiconductor device substrate, comprising the steps of:
providing a silicon substrate having a first surface and a second surface;
forming a recess having a pyramidal shape at the first surface of the silicon substrate;
forming a first insulating film on the first surface of the silicon substrate and inside the recess;
forming a first conductive layer on the first insulating film formed in the recess;
forming a wiring layer on the first surface of the silicon substrate, the wiring layer including a second conductive layer electrically connected to the first conductive layer formed in the recess; and
reducing the second surface of the silicon substrate to partially expose the first conductive layer having the pyramidal shape.
2. A method as claimed in claim 1 , wherein the recess is formed by means of etching.
3. A method as claimed in claim 1 , further including a step of forming a second insulating film on the second surface of the silicon substrate after the first conductive layer is exposed from the second surface.
4. A method as claimed in claim 3 , wherein the second insulating film is of a silicon oxide film.
5. A method as claimed in claim 3 , wherein the second insulating film is of an organic insulating film.
6. A method as claimed in claim 1 , where the second surface of the silicon substrate is reduced by grinding the second surface of said silicon substrate, followed by etching the ground second surface.