Semiconductor device having chip size package with improved strength
View Patent ↗The present invention provides a semiconductor device wherein a passivation film, an insulating film and an encapsulating layer are formed, in this order, on the surface of a semiconductor substrate, which is provided with a electrode pad thereon, and a leading end portion of a bump electrode supported by the insulating film and electrically connected to the electrode pad is exposed from the surface of the encapsulating layer. In the semiconductor device, a slit-shaped opening, which extends along a peripheral edge of the bottom of the bump electrode, is defined in the insulating film.
1. A semiconductor device comprising:
a passivation film;
an insulating film;
an encapsulating layer;
said passivation film, said insulating film and said encapsulating layer being formed, in this order, on the surface of a semiconductor substrate provided with at least one electrode pad;
a bump electrode supported by the insulating film and electrically connected to the electrode pad, said bump electrode having a leading end portion exposed from the surface of the encapsulating layer; and
a slit-shaped opening defined in the insulating film so as to extend along a peripheral edge of the bottom of the bump electrode, said slit-shaped opening being covered by said encapsulating layer,
wherein the slit-shaped opening is formed to such a depth that the passivation film is not exposed.
2. A semiconductor device comprising:
a passivation film;
an insulating film;
an encapsulating layer;
said passivation film, said insulating film and said encapsulating layer being formed, in this order, on the surface of a semiconductor substrate provided with at least one electrode pad;
a bump electrode supported by the insulating film and electrically connected to the electrode pad, said bump electrode having a leading end portion exposed from the surface of the encapsulating layer; and
a slit-shaped opening defined in the insulating film so as to extend along a peripheral edge of the bottom of the bump electrode, said slit-shaped opening being covered by said encapsulating layer,
wherein the slit-shaped opening is formed so as to extend along an overall length of the peripheral edge of the bottom of the bump electrode, and
wherein the slit-shaped opening is formed to such a depth that the passivation film is not exposed.