Granted Patent B2

US 7,161,448 · App. 10/867,540 · Granted Jan 9, 2007

Abstract

Claims (39)

1. An acoustic resonator comprising:

a substrate having a first surface;

a first electrode adjacent the first surface of the substrate;

a layer of piezoelectric material adjacent the first electrode;

a second electrode adjacent the layer of piezoelectric material, the second electrode having a second electrode outer perimeter that is shaped as a polygon; and

a recessed region adjacent the second electrode, wherein the recessed region has a height relative to the second electrode, wherein the recessed region height defines a recessed region outer perimeter, and wherein the recessed region outer perimeter is recessed relative to the second electrode outer perimeter.

2. The acoustic resonator of claim 1 wherein a depression is formed in the first surface of the substrate and wherein the first electrode spans the depression.

3. The acoustic resonator of claim 2 further comprising:

a dominant region that includes a portion of the first electrode, a portion of the layer of piezoelectric material, a portion of the second electrode and the recessed region, the dominant region having a series frequency; and

a perimeter region that includes a portion of the first electrode, a portion of the layer of piezoelectric material, and a portion of the second electrode, the perimeter region having a series frequency;

wherein the series frequency of the dominant region is 90 to 100 percent of the series frequency of the perimeter region.

4. The acoustic resonator of claim 2 wherein acoustic resonator has a resonant frequency and wherein the distance from the recessed region perimeter to the second electrode perimeter is one wavelength of the resonant frequency.

5. The acoustic resonator of claim 2 wherein acoustic resonator has a resonant frequency and wherein the distance from the recessed region perimeter to the second electrode perimeter is about 0.25 to 2.5 times the wavelength of the resonant frequency.

6. The acoustic resonator of claim 2 wherein acoustic resonator has a resonant frequency and wherein the distance from the recessed region perimeter to the second electrode perimeter is about 0.5 to 7.5 microns.

7. The acoustic resonator of claim 2 wherein the mass of the recessed region is 90 to 100 percent of the mass of the second electrode.

8. The acoustic resonator of claim 2 further comprising a second recessed region adjacent the recessed region, the second recessed region having a shape defining a second recessed region perimeter, wherein the second recessed region perimeter is recessed relative to the second electrode perimeter.

9. The acoustic resonator of claim 8 wherein the second recessed region perimeter is recessed relative to the recessed region perimeter.

10. The acoustic resonator of claim 2 wherein the depression has a shape defining a depression perimeter and wherein the recessed region perimeter is recessed relative to the depression perimeter.

11. An acoustic resonator comprising:

a substrate having a first surface:

a first electrode over the first surface of the substrate:

a layer of piezoelectric material over the first electrode:

a second electrode over the layer of piezoelectric material, wherein the second electrode has a second electrode perimeter that is shaped as a polygon and wherein the first electrode, layer of piezoelectric material and the second electrode collectively form a membrane;

means for creating a discontinuity of the membrane such that excitation of lateral modes are suppressed;

wherein the means for creating a discontinuity comprises a first recessed region having a first recessed region perimeter and wherein the first recessed region perimeter is recessed relative to the second electrode perimeter; and

wherein the means for creating a discontinuity further comprises a second recessed region adjacent the first recessed region, the second recessed region having a shape defining a second recessed region perimeter, wherein the second recessed region perimeter is recessed relative to the second electrode perimeter.

12. The acoustic resonator of claim 11 further including a dominant region having a series frequency and a perimeter region having a series frequency wherein the series frequency of the dominant region is 90 to 100 percent of the series frequency of the perimeter region.

13. The acoustic resonator of claim 11 wherein acoustic resonator has a resonant frequency and wherein the distance from the first recessed region perimeter to the second electrode perimeter is about 0.25 to 2.5 times the wavelength of the resonant frequency.

14. The acoustic resonator of claim 11 wherein acoustic resonator has a resonant frequency and wherein the distance from the first recessed region perimeter to the second electrode perimeter is about 0.5 to 7.5 microns.

15. The acoustic resonator of claim 11 wherein the mass of the first recessed region is 90 to 100 percent of the mass of the second electrode.

16. The acoustic resonator of claim 11 further comprising a depression having a shape defining a depression perimeter and wherein the first recessed region perimeter is recessed relative to the depression perimeter.

17. A method for fabrication of an acoustic resonator comprising:

providing a substrate with a surface;

depositing a first electrode adjacent the surface of the substrate;

forming a layer of piezoelectric material adjacent the first electrode;

depositing a second electrode adjacent the layer of piezoelectric material, the second electrode deposited with a thickness such that its thickness has a second electrode outer perimeter that is shaped as a polygon; and

forming a recessed region adjacent the second electrode, the recessed region formed with a thickness such that its thickness defining a recessed region outer perimeter;

wherein the recessed region outer perimeter is formed to be recessed relative to the second electrode outer perimeter.

18. The method of claim 17 wherein forming a recessed region is formed of a material selected from the group comprising AlN, Mo, Platinum, polyimide, BCB, SiO 2 , Si3N 4 , ZnO, LiNbO 3 , PZT, LiTaO 3 , and Al2O 3 .

Assignments (6)