Low resistivity silicon carbide
An opaque, low resistivity silicon carbide and a method of making the opaque, low resistivity silicon carbide. The opaque, low resistivity silicon carbide is doped with a sufficient amount of nitrogen to provide the desired properties of the silicon carbide. The opaque, low resistivity silicon carbide is a free-standing bulk material that may be machined to form furniture used for holding semi-conductor wafers during processing of the wafers. The opaque, low resistivity silicon carbide is opaque at wavelengths of light where semi-conductor wafers are processed. Such opaqueness provides for improved semi-conductor wafer manufacturing. Edge rings fashioned from the opaque, low resistivity silicon carbide can be employed in RTP chambers.
1. A method of making a silicon carbide article comprising reacting silicon carbide precursors in a nitrogen atmosphere of at least 56% by volume of reactants and depositing the silicon carbide on a substrate.
2. The method of claim 1 , wherein the nitrogen ranges from 56% to 90% by volume of reactants.
3. The method of claim 2 , wherein the nitrogen ranges from 60% to 90% by volume of reactants.
4. The method of claim 1 , wherein a total pressure is at least 300 torr.
5. The method of claim 4 , wherein the total pressure is from 300 torr to 835 torr.
6. The method of claim 5 , wherein the total pressure is from 320 torr to 700 torr.
7. The method of claim 1 , wherein temperatures range from 1250° C. to 1400° C.
8. The method of claim 1 , wherein a source of nitrogen comprises N 2 (g), volatile amine compounds, or mixtures thereof.
9. The method of claim 8 , wherein a source of nitrogen comprises NF 3 , NH 3 or mixtures thereof.
10. The method of claim 1 , further comprising the steps of removing the silicon carbide from the substrate, and machining and polishing the silicon carbide into an edge ring.