One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer
View Patent ↗A single polytype single crystal silicon carbide wafer is disclosed having a diameter greater than three inches and less than five inches, resistivity greater than 10,000 ohm-cm, a micropipe density less than 200 cm −2 , and a combined concentration of shallow level dopants less than 5E16 cm −3 .
1. A silicon carbide wafer comprising:
a single polytype single crystal;
a diameter greater than three inches and less than five inches;
a resistivity greater than 10,000 ohm-cm;
a micropipe density less than 200 cm −2 ; and
a combined concentration of shallow level dopants less than 5E16 cm −3 .
2. A wafer according to claim 1 having a diameter of about 100 mm.
3. A wafer according to claim 1 having less than 100 micropipes per square centimeter.
4. A wafer according to claim 1 having less than 30 micropipes per square centimeter.
5. A wafer according to claim 1 having less than 15 micropipes per square centimeter.
6. A wafer according to claim 1 having less than five micropipes per square centimeter.
7. An on-axis silicon carbide wafer according to claim 1 .
8. An off-axis silicon carbide wafer according to claim 1 .
9. A silicon carbide wafer according to claim 8 wherein the amount of off-axis orientation is selected from the group consisting of 8°, 4° degrees, and 3.5°.
10. A wafer according to claim 1 wherein said polytype is selected from the group consisting of the 3C, 4H, 6H and 15R polytypes of silicon carbide.
11. A wafer according to claim 1 further comprising an epitaxial layer.
12. A wafer and epitaxial layer according to claim 11 wherein the epitaxial layer is selected from the group consisting of silicon carbide and Group III nitrides.
13. A device that incorporates the wafer and epitaxial layer according to claim 12 .
14. A device according to claim 13 selected from the group consisting of FET's, MOSFET's, JFET's, MESFET's, HFET's, HEMT's, extended drain MOSFET's, and lateral DMOS transistors.
15. A wafer according to claim 1 having a concentration of nitrogen atoms less than about 2×10 15 cm −3 .
16. A wafer according to claim 1 wherein the concentration of vanadium is less than 1×10 14 cm −3 .
17. A wafer according to claim 1 having a resistivity of at least 50,000 Ω-cm at room temperature.
18. A wafer according to claim 1 having a concentration of point defects that does not exceed 5×10 17 cm −3 .
19. A wafer according to claim 1 comprising:
donor dopants, acceptor dopants, and intrinsic point defects in said silicon carbide single crystal;
wherein the number of dopants of a first conductivity type is greater than the number of dopants of a second conductivity type; and
the number of intrinsic point defects in said silicon carbide crystal that act to compensate the predominating first type dopant is greater than the numerical difference by which said first type of dopant predominates over said second type of dopant; and
the concentration of transition elements is less than 1×10 16 cm −3 .
20. A wafer according to claim 19 wherein said first type dopants are donors, said second type dopants are acceptors and said intrinsic point defects act as acceptors.
21. A wafer according to claim 20 wherein said acceptors include boron.
22. A wafer according to claim 19 wherein the concentration of vanadium is less than 1×10 14 cm −3 .
23. A wafer according to claim 1 comprising:
nitrogen; and
at least one acceptor element having an electronic energy level of between 0.3 and 1.4 eV relative to the valence band of mono-crystalline silicon carbide;
said at least one acceptor element being present in an amount that over compensates the nitrogen and pins the Fermi level of said silicon carbide substrate to the electronic energy level of said at least one acceptor element.
24. A wafer according to claim 1 comprising;
an amount of electrically active nitrogen;
an amount of electrically active point defects that act as acceptors; and
an amount at least one acceptor element having an electronic energy level of between 0.3 and 1.4 eV relative to the valence band of mono-crystalline silicon carbide;
wherein the combined amount of said acceptor element and said point defects is greater than said amount of electrically active nitrogen and pins the Fermi level of said silicon carbide single crystal to the electronic energy level of said at least one acceptor element.
25. A wafer according to claim 1 comprising:
non-intentionally introduced nitrogen;
scandium; and
boron; and wherein
the concentration of nitrogen is greater than the concentration of scandium; and
the concentration of boron is sufficient for the sum concentration of boron and scandium to overcompensate the nitrogen, and pin the Fermi level of said silicon carbide to the level of said scandium.
26. A single crystal silicon carbide wafer having a diameter greater than three inches, a resistivity greater than 10,000 ohm-cm and a micropipe density less than 200 cm −2 .
27. A wafer according to claim 26 comprising a combined concentration of shallow level dopants less than 5E16 cm −3 .
28. A single crystal of silicon carbide grown by deposition of vapor species containing Si and C on a seed crystal growth surface, said crystal having a diameter greater than three inches and a resistivity greater than 10,000 ohm-cm.
29. A wafer according to claim 28 comprising a micropipe density less than 200 cm −2 ; and a combined concentration of unintentionally introduced shallow level dopants less than 5E16 cm −3 .
30. A single crystal of unintentionally doped silicon carbide grown by sublimation of SiC source powder to generate vapor species containing Si and C without intentional introduction of P or N-type dopant atoms, said crystal having a diameter greater than three inches, a resistivity greater than 10,000 ohm-cm, a micropipe density less than 200 cm −2 ; and a combined concentration of unintentionally introduced shallow level dopants less than 5E16 cm −3 .