Quantum dot white and colored light-emitting devices
View Patent ↗A light-emitting device comprising a population of quantum dots (QDs) embedded in a host matrix and a primary light source which causes the QDs to emit secondary light and a method of making such a device. The size distribution of the QDs is chosen to allow light of a particular color to be emitted therefrom. The light emitted from the device may be of either a pure (monochromatic) color, or a mixed (polychromatic) color, and may consist solely of light emitted from the QDs themselves, or of a mixture of light emitted from the QDs and light emitted from the primary source. The QDs desirably are composed of an undoped semiconductor such as CdSe, and may optionally be overcoated to increase photoluminescence.
1. A method of producing a light-emitting device, comprising steps of:
(a) providing a population of quantum dots (QDs) and a host matrix, wherein each QD of the population comprises a core of an independently selected size and composition, the population comprises a selected size distribution of QDs, and the QDs have a surface adapted to allow the QDs to be dispersed in the host matrix;
(b) dispersing the QDs in the host matrix; and
(c) providing a light source in optical communication with the host matrix with QDs dispersed therein, wherein the light source emits primary light and when used to illuminate the QDs dispersed in the host matrix causes the QDs to photoluminesce secondary light, and wherein the matrix is disposed to allow both the primary light emitted by the light source and the secondary light emitted by the QDs to pass therethrough, thereby causing the light-emitting device to emit light comprising a mixture of primary and secondary light.
2. The method of claim 1 , wherein step (a) comprises growing the QDs by precipitation from a solution.
3. The method of claim 1 , wherein the core comprises a material independently selected from the group consisting of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, GaAs, GaP, GaAs, GaSb, HgS, HgSe, HgTe, InAs, InP, InSb, AlAs, AlP, AlSb, alloys thereof, and mixtures thereof.
4. The method of claim 1 , wherein step (a) further comprises coating the core with an overcoat.
5. The method of claim 4 , wherein the core overcoat comprises a material independently selected from the group consisting of ZnO, ZnS, ZnSe, ZnTe, CdO, CdS, CdSe, CdTe, MgS, MgSe, GaAs, GaN, GaP, GaAs, GaSb, HgO, HgS, HgSe, HgTe, InAs, InN, InP, InSb, AlAs, AlN, AlP, AlSb, alloys thereof, and mixtures thereof.
6. The method of claim 4 , wherein the core overcoat is produced by precipitation from a solution.
7. The method of claim 1 , wherein step (a) further comprises coating the QDs with a coat material having an affinity for the host matrix.
8. The method of claim 7 , wherein the host matrix comprises a polymer and the coat material comprises a related monomer.
9. The method of claim 1 , wherein the host matrix comprises a material selected from the group consisting of liquids, polymers, epoxies, silica glasses, silica gels, and combinations thereof.
10. The method of claim 1 , wherein the host matrix comprises a polymer selected from the group consisting of polyacrylate, polystyrene, polyimide, polyacrylamide, polyethylene, polyvinyl, poly-diacetylene, polyphenylene-vinylene, polypeptide, polysaccharide, polysulfone, polypyrrole, polyimidazole, polythiophene, polyether, epoxies, silica glass, silica gel, siloxane, polyphosphate, hydrogel, agarose, and cellulose.
11. The method of claim 1 , wherein the light source is selected from the group consisting of a light-emitting diode, a laser, an arc lamp and a black-body light source.
12. The method of claim 1 , wherein the population of QDs has a size distribution having less than a 10% rms deviation in diameter of the core.
13. A method of preparing a device, comprising steps of:
(a) providing a prepolymer composition, comprising (i) a precursor material capable of being reacted to form a solid host matrix that allows light to pass therethrough, and (ii) a population of photoluminescent quantum dots (QDs) disposed in the precursor material, wherein each QD of the population comprises a core of an independently selected size and composition, and the population comprises a selected size distribution of QDs;
(b) reacting the precursor material to form the host matrix with QDs dispersed therein; and
(c) providing a primary light source in optical communication with the host matrix with QDs dispersed therein.