Patent Assignment
Reel/Frame 046111/0261
Change of Name
Recorded: 2018-02-19
Pages: 7
Assignor
PHILIPS LUMILEDS LIGHTING COMPANY, LLC
Executed: 2015-03-26
Assignee
LUMILEDS LLC
370 W. TRIMBLE ROAD, SAN JOSE, CALIFORNIA, 95131
Covered Properties
(142)
Peripheral Optical Element for Redirecting Light from an Led
Patent:
5,592,578 →
Application:
08/548,309 →
Highly Reflective Contacts for Light Emitting Semiconductor Devices
Patent:
5,917,202 →
Application:
08/576,251 →
High Refractive Index Package Material and a Light Emitting Device Encapsulated with Such Material
Patent:
5,777,433 →
Application:
08/678,276 →
Maximizing Electrical Doping While Reducing Material Cracking in Iii-V Nitride Semiconductor Devices
Patent:
5,729,029 →
Application:
08/709,355 →
Method for Bonding Compound Semiconductor Wafers to Create an Ohmic Interface
Patent:
5,661,316 →
Application:
08/718,223 →
Method for Bonding Compounds Semiconductor Wafers to Create an Ohmic Interface
Patent:
5,783,477 →
Application:
08/835,948 →
Light Extraction from a Semiconductor Light-Emitting Device via Chip Shaping
Patent:
6,229,160 →
Application:
08/868,009 →
Transparent Substrate Light Emitting Diodes with Directed Light Output
Patent:
5,793,062 →
Application:
08/962,944 →
Method for Cleaning a Semiconductor Surface
Patent:
5,919,715 →
Application:
09/018,776 →
Transparent Substrate Light Emitting Diodes with Directed Light Output
Patent:
6,015,719 →
Application:
09/066,089 →
Strain Engineered and Impurity Controlled 111-V Nitride Semiconductor Films and Optoelectronic Devices
Patent:
6,194,742 →
Application:
09/092,478 →
Multiple Encapsulation of Phosphor-Led Devices
Patent:
5,959,316 →
Application:
09/144,744 →
Light Emitting Device Having a Finely-Patterned Reflective Contact
Patent:
6,291,839 →
Application:
09/151,554 →
Group Iii-V Semiconductor Light Emitting Devices with Reduced Piezoelectric Fields and Increased Efficiency
Patent:
6,229,151 →
Application:
09/162,708 →
Minority Carrier Semiconductor Devices with Improved Reliabilty
High Stability Optical Encapsulation and Packaging for Light-Emitting Diodes in the Green, Blue, and Near Uv Range
Patent:
6,204,523 →
Application:
09/187,357 →
Advanced Semiconductor Devices Fabricated with Passivated High Aluminum Content Iii-V Materials
Patent:
6,201,264 →
Application:
09/231,411 →
Solid State Illumination Source Utilizing Dichroic Reflectors
Patent:
6,273,589 →
Application:
09/239,572 →
Light Emitting Devices Having Wafer Bonded Aluminum Gallium Indium Nitride Structures and Mirror Stacks
Patent:
6,320,206 →
Application:
09/245,435 →
Thickness Tailoring of Wafer Bonded Alxgayinzn Structures by Laser Melting
Patent:
6,280,523 →
Application:
09/245,448 →
Red-Deficiency-Compensating Phosphor Led
Patent:
6,351,069 →
Application:
09/252,207 →
Advanced Semiconductor Devices Fabricated with Passivated High Aluminum Content Iii-V Materials
Patent:
6,048,748 →
Application:
09/293,277 →
Diffusion Barrier for Increased Mirror Reflectivity in Reflective Solderable Contacts on High Power Led Chip
Patent:
6,222,207 →
Application:
09/317,647 →
Method of Forming Transparent Contacts to a P-Type Gan Layer
Patent:
6,287,947 →
Application:
09/327,948 →
Quantum Dot White and Colored Light-Emitting Devices
Patent:
6,803,719 →
Application:
09/350,956 →
Non-Incandescent Lightbulb Package Using Light Emitting Diodes
Patent:
6,504,301 →
Application:
09/390,006 →
Thin Film Phosphor-Converted Light Emitting Diode Device
Tri-Color, White Light Led Lamps
Patent:
6,686,691 →
Application:
09/405,947 →
Light Emitting Diode Device Comprising a Luminescent Substrate That Performs Phosphor Conversion
Patent:
6,630,691 →
Application:
09/407,231 →
Semiconductor Devices with Selectively Doped Iii-V Nitride Layers
Multi-Layer Highly Reflective Ohmic Contacts for Semiconductor Devices
Patent:
6,992,334 →
Application:
09/469,652 →
Iii-Nitride Light-Emitting Device with Increased Light Generating Capability
Patent:
6,486,499 →
Application:
09/469,657 →
Method of Making a Iii-Nitride Light-Emitting Device with Increased Light Generating Capability
Patent:
6,514,782 →
Application:
09/470,450 →
Light Emitting Device Having a Finely-Patterned Reflective Contact
Patent:
6,258,618 →
Application:
09/483,293 →
Concentrically Leaded Power Semiconductor Device Package
Patent:
6,492,725 →
Application:
09/498,311 →
Light Emitting Diode Device That Emits White Light
Patent:
6,603,258 →
Application:
09/556,770 →
Semiconductor Substrate and Method for Making the Same
Patent:
6,537,513 →
Application:
09/562,978 →
P-Contact for Gan-Based Semiconductors Utilizing a Reverse-Biased Tunnel Junction
Patent:
6,526,082 →
Application:
09/586,406 →
Light Emitting Semiconductor Method and Device
Patent:
6,946,685 →
Application:
09/652,194 →
Light Emitting Diodes with Improved Light Extraction Efficiency
Patent:
7,053,419 →
Application:
09/660,317 →
Stenciling Phosphor Layers on Light Emitting Diodes
Patent:
6,650,044 →
Application:
09/688,053 →
Light Emitting Semiconductor Devices Including Wafer Bonded Heterostructures
Patent:
6,525,335 →
Application:
09/707,495 →
Separation Method for Gallium Nitride Devices on Lattice-Mismatched Substrates
Formation of Ohmic Contacts in Iii-Nitride Light Emitting Devices
Increasing the Brightness of Iii-Nitride Light Emitting Devices
Highly Reflective Ohmic Contacts to A1GAINN Flip-Chip Leds
Patent:
6,573,537 →
Application:
09/821,684 →
Indium Gallium Nitride Smoothing Structures for Iii-Nitride Devices
Indium Gallium Nitride Smoothing Structures for Iii-Nitride Devices
Forming an Optical Element on the Surface of a Light Emitting Device for Improved Light Extraction
Phosphor Converted Light Emitting Diode
Patent:
6,417,019 →
Application:
09/827,382 →
Illumination System, Light Mixing Chamber and Display Device
Side Emitting Light Emitting Device
Lens with Refractive and Reflective Surfaces
Semiconductor Led Flip-Chip with High Reflectivity Dielectric Coating on the Mesa
Epitaxial Aluminium-Gallium Nitride Semiconductor Substrate
Patent:
6,534,791 →
Application:
09/856,724 →
Semiconductor Led Flip-Chip Having Low Refractive Index Underfill
Patent:
6,455,878 →
Application:
09/858,833 →
Multi-Chip Semiconductor Led Assembly
Iii-Nitride Light Emitting Devices with Low Driving Voltage
Phosphor-Converted Light Emitting Device
Light-Emitting Device and Production Thereof
Using Electrophoresis to Produce a Conformally Coated Phosphor-Converted Light Emitting Semiconductor Structure
Green Phosphor Converted Light Emitting Diode
Reduction of Contamination of Light Emitting Devices
High Flux Led Array
Patent:
6,498,355 →
Application:
09/974,563 →
Nitride Semiconductor Device with Reduced Polarization Fields
Nucleation Layer for Improved Light Extraction from Light Emitting Devices
Indium Gallium Nitride Separate Confinement Heterostructure Light Emitting Devices
Led Including Photonic Crystal Structure
Red-Deficiency Compensating Phosphor Light Emitting Device
Iii-Phosphide and Iii-Arsenide Flip Chip Light-Emitting Devices
Producing Self-Aligned and Self-Exposed Photoresist Patterns on Light Emitting Devices
Selective Placement of Quantum Wells in Flipchip Light Emitting Diodes for Improved Light Extraction
Light-Emitting Devices Utilizing Nanoparticles
Side Emitting Led and Lens
Iii-Nitride Light Emitting Device with P-Type Active Layer
Light Emitting Devices Including Tunnel Junctions
Enhanced Brightness Light Emitting Device Spot Emitter
Growth of Iii-Nitride Films on Mismatched Substrates Without Conventional Low Temperature Nucleation Layers
Light Emitting Device with Enhanced Optical Scattering
Quantum Dot White and Colored Light Emitting Diodes
Quantum Dot White and Colored Light Emitting Diodes
Semiconductor Led Flip-Chip with Dielectric Coating on the Mesa
Heterostructures for Iii-Nitride Light Emitting Devices
Mount for Semiconductor Light Emitting Device
Light Emitting Devices with Compact Active Regions
Light Emitting Devices with Improved Light Extraction Efficiency
Semiconductor Light Emitting Devices
Package for a Semiconductor Light Emitting Device
Resonant Cavity Light Emitting Device
Integrated Reflector Cup for a Light Emitting Device Mount
Photonic Crystal Light Emitting Device
Semiconductor Light Emitting Devices Including Current Spreading Layers
Iii-Nitride Light Emitting Device with Reduced Polarization Fields
Iii-Nitride Light-Emitting Devices with Improved High-Current Efficiency
Phosphor Converted Light Emitting Device
Ceramic Substrate for a Light Emitting Diode Where the Substrate Incorporates Esd Protection
Illumination System with Aligned Leds
Semiconductor Light Emitting Devices Including in-Plane Light Emitting Layers
Strain-Controlled Iii-Nitride Light Emitting Device
Led Chip with Integrated Fast Switching Diode for Esd Protection
Semiconductor Light Emitting Device Including Photonic Band Gap Material and Luminescent Material
Patent:
6,956,247 →
Application:
10/855,292 →
Resonant Cavity Iii-Nitride Light Emitting Devices Fabricated by Growth Substrate Removal
Patent:
6,956,246 →
Application:
10/861,745 →
Method of Forming Pre-Fabricated Wavelength Converting Elements for Semiconductor Light Emitting Devices
Quantum Dot White and Colored Light-Emitting Devices
Semiconductor Light Emitting Device Package with Cover with Flexible Portion
Photonic Crystal Light Emitting Device with Multiple Lattices
Package-Integrated Thin Film Led
Bonding an Optical Element to a Light Emitting Device
Phosphor Converted Light Emitting Device
Polarization-Reversed Iii-Nitride Light Emitting Device
Wavelength-Converted Semiconductor Light Emitting Device
Rgb Thermal Isolation Substrate
Method of Removing the Growth Substrate of a Semiconductor Light Emitting Device
Grown Photonic Crystals in Semiconductor Light Emitting Devices
Multiple Die Led and Lens Optical System
Interconnects for Semiconductor Light Emitting Devices
Substrate for Growing a Iii-V Light Emitting Device
Laminating Encapsulant Film Containing Phosphor Over Leds
Light-Emitting Device
White Led for Backlight with Phosphor Plates
Semiconductor Light Emitting Device with Integrated Electronic Components
Method of Fabricating a Reflective Electrode for a Semiconductor Light Emitting Device
Semiconductor Light Emitting Device Including Porous Layer
Low Profile Side Emitting Led
Color Control by Alteration of Wavelength Converting Element
Light Emitting Device Including Arrayed Emitters Defined by a Photonic Crystal
Light Emitting Device Including Luminescent Ceramic and Light-Scattering Material
Tunable White Point Light Source Using a Wavelength Converting Element
Led Assembly Having Maximum Metal Support for Laser Lift-Off of Growth Substrate
Light Emitting Device Including a Filter
Iii-Nitride Light Emitting Device with Reduced Strain Light Emitting Layer
Iii-Nitride Light Emitting Devices Grown on Templates to Reduce Strain
Iii-Nitride Light Emitting Devices Grown on Templates to Reduce Strain
Iii-Nitride Light Emitting Devices Grown on Templates to Reduce Strain
Illumination Device with a Wavelength Converting Element Held by a Support Structure Having an Aperture
Thin Luminaire for General Lighting Applications
Thin Flash or Video Recording Light Using Low Profile Side Emitting Led
Solderless Integrated Package Connector and Heat Sink for Led
Quantum Dot White and Colored Light-Emitting Devices
Optical Element Coupled to Low Profile Side Emitting Led
Silicone Resin for Protecting a Light Transmitting Surface of an Optoelectronic Device
Low Profile Side Emitting Led with Window Layer and Phosphor Layer
Related Assignments
(10)
Other recorded transfers of the patents in this record — the chain of ownership.
Patent Security Agreement
May 8, 2014
From: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
To: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
Reel/Frame 032851/0001 →
Termination and Release of Security Interest in Patent Rights (Releases Rf 032851-0001)
Feb 2, 2016
From: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
To: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
Reel/Frame 037689/0001 →
Patent Security Agreement
Feb 11, 2016
From: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
To: BANK OF AMERICA, N.A., AS COLLATERAL AGENT
Reel/Frame 037808/0001 →
Corrective Assignment to Correct the Name of the Assignee Previously Recorded on Reel 017207 Frame 0020. Assignor(S) Hereby Confirms the Assignment.
May 6, 2016
From: AGILENT TECHNOLOGIES, INC.
To: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
Reel/Frame 038633/0001 →
Termination and Release of Security Interest in Patents
Feb 3, 2017
From: BANK OF AMERICA, N.A., AS COLLATERAL AGENT
To: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
Reel/Frame 041710/0001 →
Security Interest
Jul 7, 2017
From: LUMILEDS LLC
To: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
Reel/Frame 043108/0001 →
Assignment of Assignor's Interest
Sep 24, 2018
From: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
To: AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED
Reel/Frame 047022/0620 →
Corrective Assignment to Correct the Nature of Conveyance and Effective Date Previously Recorded on Reel 047022 Frame 0620. Assignor(S) Hereby Confirms the Merger.
Oct 2, 2018
From: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
To: AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED
Reel/Frame 047185/0643 →
Corrective Assignment to Correct the Effective Date Previously Recorded on Reel 047185 Frame 0643. Assignor(S) Hereby Confirms the Merger.
Oct 26, 2018
From: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
To: AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED
Reel/Frame 047476/0845 →
Corrective Assignment to Correct the Effective Date of Merger Previously Recorded at Reel: 047185 Frame: 0643. Assignor(S) Hereby Confirms the Corrective Merger.
Nov 5, 2018
From: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
To: AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED
Reel/Frame 047959/0296 →