Granted Patent
Utility
US 6,194,742 · App. 09/092,478
Strain engineered and impurity controlled III-V nitride semiconductor films and optoelectronic devices
Inventors:
R. Scott Kern, Changhua Chen, Werner Goetz, Chihping Kuo
Patented Case
View Patent ↗
Granted: Feb 27, 2001
Filed: Jun 5, 1998
Inventors
R. Scott Kern
Changhua Chen
Werner Goetz
Chihping Kuo
Assignee (at issue)
Lumileds Lighting US, LLC
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.