Semiconductor light emitting device with integrated electronic components
View Patent ↗One or more circuit elements such as silicon diodes, resistors, capacitors, and inductors are disposed between the semiconductor structure of a semiconductor light emitting device and the connection layers used to connect the device to an external structure. In some embodiments, the n-contacts to the semiconductor structure are distributed across multiple vias, which are isolated from the p-contacts by one or more dielectric layers. The circuit elements are formed in the contacts-dielectric layers-connection layers stack.
1. A device comprising:
a semiconductor structure comprising a light emitting region disposed between an n-type region and a p-type region;
a first metal contact in direct contact with the n-type region and a second metal contact in direct contact with the p-type region;
a first connection layer electrically connected to the n-type region and a second connection layer electrically connected to the p-type region, wherein the first and second connections layers are formed on the same side of the semiconductor structure; and
a circuit element disposed between one of the first and second contacts on the one hand and the second connection layer on the other hand, wherein the circuit element comprises at least one metal layer and a dielectric layer, the dielectric layer isolating the metal layer from one of the first and second contacts or one of the first and second connection layers, wherein the first and second contacts are formed between the semiconductor structure on the one hand and the first and the second connection layers on the other hand.
2. The device of claim 1 wherein the circuit element comprises a resistor.
3. The device of claim 1 wherein the circuit element comprises a capacitor.
4. The device of claim 1 wherein the circuit element comprises an inductor.
5. The device of claim 1 wherein the circuit element is electrically connected between one of the first and second contacts and one of the first and second connection layers.
6. The device of claim 5 wherein:
a portion of the first contact overlies a portion of the second connection layer, and
the circuit element is disposed between the first contact and the second connection layer.
7. The device of claim 1 further comprising a cover disposed over the light emitting region.
8. The device of claim 1 wherein the circuit element is a resistor disposed between the second metal contact and the second connection layer.
9. The device of claim 8 further comprising a capacitor disposed between the first metal contact and the second connection layer.
10. The device of claim 1 wherein the circuit element is a capacitor disposed between the first metal contact and the second connection layer.