Growth of III-nitride films on mismatched substrates without conventional low temperature nucleation layers
View Patent ↗A method of forming a light emitting device includes providing a sapphire substrate, growing an Al 1−x Ga x N first layer by vapor deposition on the substrate at a temperature between about 1000° C. and about 1180° C., and growing a III-nitride second layer overlying the first layer. The first layer may have a thickness between about 500 angstroms and about 5000 angstroms. In some embodiments, reaction between the group V precursor and the substrate is reduced by starting with a low molar ratio of group V precursor to group III precursor, then increasing the ratio during growth of the first layer, or by using nitrogen as an ambient gas.
1. A method of forming a light emitting device, the method comprising:
providing a sapphire substrate;
growing an Al 1−x Ga x N first layer by metal organic chemical vapor deposition directly on on the substrate at a temperature between about 1000° C. and about 1180° C., wherein 0≦x<1 and wherein the first layer has a thickness between about 500 angstroms and about 5000 angstroms, and wherein growing the first layer comprises: growing a first portion of the first layer adjacent to the substrate at a first ratio of group V precursor to a group III precursor; and
Increasing the first ratio to a second ratio of a group V precursor to a group III precursor while growing a second portion of the first layer; and
growing a III-nitride second layer overlying the first layer.
2. The method of claim 1 wherein the first layer is grown at a temperature between about 1060° C. and about 1160° C.
3. The method of claim 1 wherein the first layer is grown at a temperature between about 1080° C. and about 1100° C.
4. The method of claim 1 wherein the first layer is AlN.
5. The method of claim 1 wherein the first layer has a thickness between about 1000 angstroms and about 3000 angstroms.
6. The method of claim 1 wherein the first layer has a thickness between about 2000 angstroms and about 2500 angstroms.
7. The method of claim 1 wherein 0≦x≦0.5.
8. The method of claim 1 wherein the second layer is grown at the same temperature as the first layer.
9. The method of claim 1 wherein the second layer is grown at a lower temperature than the first layer.
10. The method of claim 1 wherein the second layer is one of GaN, InGaN, AlGaN, and AlInGaN.
11. The method of claim 1 wherein the second layer is doped.
12. The method of claim 1 wherein the second layer is doped with Si to a dopant concentration ranging from undoped to about 5×10 18 cm −3 .
13. The method of claim 1 wherein the second layer is doped with a p-type dopant and has a dopant concentration ranging from undoped to about 5×10 19 cm −3 .
14. The method of claim 1 wherein the second layer has a thickness between about 500 angstroms and about 2 microns.
15. The method of claim 1 wherein the group V precursor comprises NH 3 .
16. The method of claim 1 wherein the group III precursor comprises at least one of trimethyl aluminum, trimethyl gallium, triethyl aluminum, and triethyl gallium.
17. The method of claim 1 wherein the first ratio is a molar ratio ranging between about 20 and about 100, and the second ratio is a molar ration greater than about 150.
18. The method of claim 1 wherein growing a first portion of the first layer comprises growing between about 100 angstroms and about 500 angstroms of the first layer.
19. The method of claim 1 further comprising providing the group III precursor and the group V precursor to the substrate at substantially the same time.
20. The method of claim 1 wherein growing the first layer comprises providing a group III precursor, a group V precursor, and an ambient to the substrate, wherein the ambient is nitrogen.
21. The method of claim 20 further comprising providing hydrogen during growth of the second layer.
22. The method of claim 1 further comprising:
growing an n-type region overlying the second layer;
growing an active region overlying the n-type region; and
growing a p-type region overlying the active region.
23. The method of claim 22 further comprising:
forming a first contact electrically connected to the n-type region;
forming a second contact electrically connected to the p-type region; and
providing a lens overlying a side of the substrate opposite the first layer.