Patent Assignment
Reel/Frame 025850/0770
Change of Name
Recorded: 2011-02-15
Received: 2011-02-15
Pages: 15
Assignors
LUMILEDS LIGHTING U.S. LLC
Executed: 2011-02-11
LUMILEDS LIGHTING U.S., LLC
Executed: 2011-02-11
LUMILEDS LIGHTING, U.S. LLC
Executed: 2011-02-11
LUMILEDS LIGHTING, U.S., LLC
Executed: 2011-02-11
Assignee
PHILIPS LUMILEDS LIGHTING COMPANY LLC
370 WEST TRIMBLE ROAD, SAN JOSE, CA, 95131, UNITED STATES
Covered Properties
(100)
Multi-colored LED array with improved color uniformity
Application:
11/361,109 →
Light-Emitting Device
Application:
11/313,120 →
Array of Light Emitting Devices to Produce a White Light Source
Application:
11/297,287 →
Luminescent Ceramic Element for a Light Emitting Device
Application:
11/290,299 →
Laminating Encapsulant Film Containing Phosphor Over Leds
Application:
11/261,122 →
Multiple Pierce Reflective Angle Transformer
Application:
11/262,192 →
Multiple Light Emitting Diodes with Different Secondary Optics
Application:
11/260,713 →
Illumination System Using Phosphor Remote from Light Source
Application:
11/252,421 →
Illumination System with Optical Concentrator and Wavelength Converting Element
Application:
11/248,945 →
Light source with light emitting array and collection optic
Application:
11/242,300 →
Substrate for Growing a Iii-V Light Emitting Device
Application:
11/237,164 →
Interconnects for Semiconductor Light Emitting Devices
Application:
11/226,151 →
Led Light Source for Backlighting with Integrated Electronics
Application:
11/212,185 →
Iii-Nitride Light Emitting Device with Double Heterostructure Light Emitting Region
Application:
11/211,921 →
Multiple Die Led and Lens Optical System
Application:
11/201,465 →
Fluid Purification System with Ultra Violet Light Emitters
Application:
11/156,102 →
Grown Photonic Crystals in Semiconductor Light Emitting Devices
Application:
11/156,105 →
Method of Removing the Growth Substrate of a Semiconductor Light Emitting Device
Application:
11/149,679 →
Rgb Thermal Isolation Substrate
Application:
11/118,898 →
Wide Emitting Lens for Led Useful for Backlighting
Application:
11/093,961 →
Wavelength-Converted Semiconductor Light Emitting Device
Application:
11/080,801 →
Polarization-Reversed Iii-Nitride Light Emitting Device
Application:
11/080,022 →
Compact Lighting System and Display Device
Application:
10/505,247 →
Overmolded Lens Over Led Die
Application:
11/069,418 →
Beam Shutter in Led Package
Application:
11/053,091 →
Phosphor Converted Light Emitting Device
Application:
11/008,863 →
Molded Lens Over Led Die
Application:
10/990,208 →
Fluorescent Polysiloxanes
Application:
10/982,065 →
Package-Integrated Thin Film Led
Application:
10/977,294 →
Photonic Crystal Light Emitting Device with Multiple Lattices
Application:
10/911,468 →
Semiconductor Light Emitting Device Package with Cover with Flexible Portion
Application:
10/911,443 →
Quantum Dot White and Colored Light-Emitting Devices
Application:
10/877,698 →
Light emitting device with transparent substrate having backside vias
Application:
10/867,606 →
Method of Forming Pre-Fabricated Wavelength Converting Elements for Semiconductor Light Emitting Devices
Application:
10/863,980 →
Remote Wavelength Conversion in an Illumination Device
Application:
10/861,769 →
Resonant Cavity Iii-Nitride Light Emitting Devices Fabricated by Growth Substrate Removal
Application:
10/861,745 →
Luminescent Ceramic for a Light Emitting Device
Application:
10/861,172 →
Led Chip with Integrated Fast Switching Diode for Esd Protection
Application:
10/855,277 →
Semiconductor Light Emitting Device Including Photonic Band Gap Material and Luminescent Material
Application:
10/855,292 →
Semiconductor light emitting device with flexible substrate
Application:
10/840,459 →
Strain-Controlled Iii-Nitride Light Emitting Device
Application:
10/830,202 →
Semiconductor Light Emitting Devices Including in-Plane Light Emitting Layers
Application:
10/829,141 →
Illumination System and Display Device
Application:
10/810,169 →
Polarized Semiconductor Light Emitting Device
Application:
10/804,314 →
Semiconductor Light Emitting Devices Including in-Plane Light Emitting Layers
Application:
10/805,424 →
Photonic Crystal Light Emitting Device
Application:
10/804,810 →
Illumination System with Aligned Leds
Application:
10/789,834 →
Ceramic Substrate for a Light Emitting Diode Where the Substrate Incorporates Esd Protection
Application:
10/787,657 →
Phosphor Converted Light Emitting Device
Application:
10/785,620 →
Illumination system with LEDs
Application:
10/782,248 →
Iii-Nitride Light Emitting Device with Reduced Polarization Fields
Application:
10/769,260 →
Iii-Nitride Light-Emitting Devices with Improved High-Current Efficiency
Application:
10/769,590 →
Semiconductor Light Emitting Devices Including Current Spreading Layers
Application:
10/766,277 →
Led with an Optical System to Increase Luminance by Recycling Emitted Light
Application:
10/765,312 →
Led Switching Arrangement
Application:
10/483,862 →
Led Switching Arrangement for Enhancing Electromagnetic Interference
Application:
10/483,861 →
Lighting Arrangement
Application:
10/726,854 →
Led Lamp Heat Sink
Application:
10/723,711 →
Light Emitting Devices with Enhanced Luminous Efficiency
Application:
10/699,433 →
Photonic Crystal Light Emitting Device
Application:
10/691,026 →
Circuit Arrangement
Application:
10/684,066 →
Lcd Backlight Using Two-Dimensional Array Leds
Application:
10/678,541 →
Integrated Reflector Cup for a Light Emitting Device Mount
Application:
10/678,279 →
Package for a Semiconductor Light Emitting Device
Application:
10/652,348 →
Resonant Cavity Light Emitting Device
Application:
10/652,798 →
Semiconductor Light Emitting Devices
Application:
10/633,058 →
Mount for Semiconductor Light Emitting Device
Application:
10/632,719 →
Light Emitting Devices with Improved Light Extraction Efficiency
Application:
10/633,054 →
Light Emitting Devices with Compact Active Regions
Application:
10/632,720 →
Iii-Nitride Light Emitting Devices Fabricated by Substrate Removal
Application:
10/631,001 →
Circuit Arrangement
Application:
10/614,878 →
Heterostructures for Iii-Nitride Light Emitting Devices
Application:
10/465,775 →
Semiconductor Led Flip-Chip with Dielectric Coating on the Mesa
Application:
10/461,173 →
Quantum Dot White and Colored Light Emitting Diodes
Application:
10/329,596 →
Quantum Dot White and Colored Light Emitting Diodes
Application:
10/329,909 →
Light Emitting Device with Enhanced Optical Scattering
Application:
10/317,956 →
Growth of Iii-Nitride Films on Mismatched Substrates Without Conventional Low Temperature Nucleation Layers
Application:
10/317,309 →
Enhanced Brightness Light Emitting Device Spot Emitter
Application:
10/283,737 →
Illumination system
Application:
10/278,390 →
Phosphor Converted Light Emitting Device
Application:
10/272,150 →
Light Emitting Devices Including Tunnel Junctions
Application:
10/261,534 →
Selective Filtering of Wavelength-Converted Semiconductor Light Emitting Devices
Application:
10/260,090 →
Backlight for a color LCD using wavelength-converted light emitting devices
Application:
10/256,706 →
Iii-Nitride Light Emitting Device with P-Type Active Layer
Application:
10/209,468 →
Side Emitting Led and Lens
Application:
10/179,600 →
Semiconductor light emitting device with fluoropolymer lens
Application:
10/170,882 →
Axial Led Source
Application:
10/166,853 →
Light-Emitting Devices Utilizing Nanoparticles
Application:
10/165,571 →
Selective Placement of Quantum Wells in Flipchip Light Emitting Diodes for Improved Light Extraction
Application:
10/158,360 →
Illumination System and Display Device
Application:
10/139,180 →
Producing Self-Aligned and Self-Exposed Photoresist Patterns on Light Emitting Devices
Application:
10/104,883 →
Iii-Phosphide and Iii-Arsenide Flip Chip Light-Emitting Devices
Application:
10/095,552 →
Red-Deficiency Compensating Phosphor Light Emitting Device
Application:
10/083,314 →
Led Including Photonic Crystal Structure
Application:
10/059,588 →
Nitride Semiconductor Device with Reduced Polarization Fields
Application:
09/992,192 →
Nucleation Layer for Improved Light Extraction from Light Emitting Devices
Application:
09/993,862 →
Indium Gallium Nitride Separate Confinement Heterostructure Light Emitting Devices
Application:
10/033,349 →
Led Driver Circuit and Method
Application:
09/999,157 →
Selective placement of quantum wells in flipchip light emitting diodes for improved light extraction
Application:
09/977,144 →
High Flux Led Array
Application:
09/974,563 →