Methods for forming patterns on a filled dielectric material on substrates
Methods of forming a pattern of filled dielectric material on a substrate by thermal transfer processes are disclosed comprising exposing to heat a thermally imageable donor element comprising a substrate and a transfer layer of dielectric material. The exposure pattern is the image of the desired pattern to be formed on the substrate, such that portions of the layer of dielectric material are transferred onto the substrate where the electronic device is being formed. The filled dielectric material can be patterned onto a gate electrode of a thin film transistor. The pattern dielectric material may also form an insulating layer for interconnects. Donor elements for use in the process are also disclosed. Methods for forming thin film transistors and donor elements for use in the thermal transfer processes are also disclosed.
1. An article, comprising:
a. a transparent, dimensionally stable substrate in sheet form;
b. a transfer layer, comprising high dielectric constant nanoparticles dispersed in a solvent or a polymer matrix wherein the polymer matrix is selected from polyalcohols, polyamines, polyamides, and polyesters; and
c. a heating layer located between the substrate and the transfer layer.
2. The article of claim 1 , further comprising an ejection layer between the substrate and the transfer layer.
3. The article of claim 2 , wherein the ejection layer comprises an organic material having a decomposition temperature less then 275° C., and wherein the organic material is selected from the group consisting of polyvinyl chloride, chlorinated polyvinyl chloride, polymethylmethacrylate, polymethacrylate copolymers, and nitrocellulose.
4. The article of claim 1 , wherein the substrate is flexible.
5. The article of claim 1 , wherein the substrate comprises a plasma-treated polyester sheet.
6. The article of claim 1 , wherein the heating layer comprises carbon, a metal, a metal alloy or an organic binder and an infrared absorber.
7. The article of claim 6 , wherein the heating layer comprises Ni, Al, Cr, W, V, or C.
8. The article of claim 7 , wherein the heating layer comprises electron beam-deposited Ni.