Organic light-emitting diode and method of fabricating the same
An organic light-emitting diode and method of fabricating the same. The organic light-emitting diode includes a substrate having a plurality of protrusions on a first plane thereof, a first electrode installed on a second plane of the substrate, wherein the second plane is opposed to the first plane, an organic light-emitting layer installed on the first electrode, and a second electrode installed on the organic light-emitting layer.
1. A method of fabricating an organic light-emitting diode, comprising:
providing a substrate;
forming a dielectric layer on a first plane of the substrate, wherein the dielectric layer comprises silicon oxide, silicon nitride, or silicon oxide nitride;
defining the dielectric layer to form a plurality of protrusions;
forming a first electrode on a second plane of the substrate, wherein the second plane is opposed to the first plane;
forming an organic light-emitting layer on the first electrode; and
forming a second electrode on the organic light-emitting layer.
2. The method as claimed in claim 1 , wherein the height of the protrusions is about 4000˜8000 Å.
3. The method as claimed in claim 1 , wherein the width of the protrusions is about 3000˜7000 Å.
4. The method as claimed in claim 1 , wherein protrusion structure is arced.
5. The method as claimed in claim 4 , wherein the contact angle between the arced structure and the substrate is not greater than about 90°.
6. The method as claimed in claim 4 , wherein the protrusion structure is trapezoidalal with a top wider than bottom, or the opposite.
7. An organic light-emitting diode, comprising:
a substrate having a plurality of protrusions on a first plane thereof, wherein the protrusions comprise silicon oxide, silicon nitride, or silicon oxide nitride;
a first electrode installed on a second plane of the substrate, wherein the second plane is opposed to the first plane;
an organic light-emitting layer installed on the first electrode; and
a second electrode installed on the organic light-emitting layer.
8. The organic light-emitting diode as claimed in claim 7 , wherein the height of the protrusions is about 4000˜8000 Å.
9. The organic light-emitting diode as claimed in claim 7 , wherein the width of the protrusions is about 3000˜7000 Å.
10. The organic light-emitting diode as claimed in claim 7 , wherein the protrusion structure is arced.
11. The organic light-emitting diode as claimed in claim 10 , wherein the contact angle between the arced structure and the substrate is not greater than about 90°.
12. The organic light-emitting diode as claimed in claim 7 , wherein the protrusion structure is trapezoidalal with a top wider than bottom, or the opposite.
13. The organic light-emitting diode as claimed in claim 7 , wherein the protrusion structure is rectangular.