Granted Patent B2

US 7,153,741 · App. 10/886,078 · Granted Dec 26, 2006

Abstract

Claims (46)

1. A method of fabricating a floating gate for a floating-gate memory cell, comprising:

forming isolation regions in a semiconductor substrate and exposing portions of the semiconductor substrate between adjacent isolation regions;

forming a tunnel dielectric layer on the exposed portions of the semiconductor substrate;

forming and patterning a base structure overlying the tunnel dielectric layer and extending past sidewalls of the adjacent isolation regions; and

forming an extension of epitaxial silicon on the base structure, wherein the floating gate comprises the base structure and the extension of epitaxial silicon.

2. The method of claim 1 , wherein forming and patterning the base structure overlying the tunnel dielectric layer and extending past sidewalls of the adjacent isolation regions further comprises forming and patterning a polysilicon layer on the tunnel dielectric layer and on portions of the adjacent isolation regions.

3. The method of claim 1 , wherein forming and patterning the base structure overlying the tunnel dielectric layer and extending past sidewalls of the adjacent isolation regions further comprises forming and patterning a first polysilicon layer on the tunnel dielectric layer and forming and patterning a second polysilicon layer on the first polysilicon layer and on portions of the adjacent isolation regions.

4. The method of claim 1 , further comprising:

doping the epitaxial silicon concurrently with forming the extension.

5. A method of fabricating a floating-gate memory cell, comprising:

forming a first dielectric layer on a semiconductor substrate between isolation regions;

forming a polysilicon layer on the first dielectric layer and extending past sidewalls of the isolation regions;

growing epitaxial silicon on the polysilicon layer, wherein the polysilicon layer and epitaxial silicon growth form a floating-gate layer;

forming a second dielectric layer on the floating-gate layer; and

forming a conductive layer on the second dielectric layer.

6. A method of fabricating a floating-gate memory cell, comprising:

forming at least one sacrificial layer on a semiconductor substrate;

patterning the at least one sacrificial layer to expose first portions of the substrate;

removing the exposed first portions of the substrate to define trenches;

filling the trenches with dielectric material, thereby defining isolation regions;

removing the patterned at least one sacrificial layer to expose second portions of the substrate;

forming a tunnel dielectric layer on the exposed second portions of the substrate;

forming a first layer of conductive material on the tunnel dielectric layer;

patterning the first layer of conductive material such that the patterned first layer of conductive material extends past sidewalls of the isolation regions;

forming epitaxial silicon on the patterned first layer of conductive material;

forming an intergate dielectric layer overlying the epitaxial silicon;

forming a control gate layer overlying the intergate dielectric layer; and

patterning the control gate layer.

7. The method of claim 1 , wherein forming an extension of epitaxial silicon on the base structure further comprises forming the extension of epitaxial silicon to extend past sidewalls of the isolation regions by a distance greater than the base structure extends past the sidewalls of the isolation regions.

8. A method of fabricating a floating gate for a floating-gate memory cell, comprising:

forming isolation regions in a semiconductor substrate and exposing portions of the semiconductor substrate between adjacent isolation regions:

forming a tunnel dielectric layer on the exposed portions of the semiconductor substrate;

forming and patterning a polysilicon layer on the tunnel dielectric layer and extending past sidewalls of the adjacent isolation regions, thereby defining a base structure;

forming an extension of epitaxial silicon on a base structure, wherein the floating gate comprises the base structure and the extension of epitaxial silicon; and

doping the epitaxial silicon concurrently with forming the extension.

9. A method of fabricating a floating gate for a floating-gate memory cell, comprising:

forming and patterning a first polysilicon layer on a tunnel dielectric layer located between adjacent isolation regions;

forming and patterning a second polysilicon layer on the first polysilicon layer and extending past sidewalls of the adjacent isolation regions, wherein the first and second polysilicon layers define a base structure;

forming an extension of epitaxial silicon on the base structure, wherein the floating gate comprises the base structure and the extension of epitaxial silicon; and

doping the epitaxial silicon concurrently with forming the extension.

10. The method of claim 5 , wherein growing epitaxial silicon on the polysilicon layer further comprises growing the epitaxial silicon to extend past the sidewalls of the isolation regions by a distance greater than the polysilicon layer extends past the sidewalls of the isolation regions.

11. The method of claim 5 , further comprising conductively doping the epitaxial silicon.

12. The method of claim 5 , further comprising conductively doping the polysilicon layer.

13. The method of claim 6 , wherein forming a first layer of conductive material on the tunnel dielectric layer further comprises forming a layer a conductively-doped polysilicon on the tunnel dielectric layer.

14. The method of claim 13 , wherein forming a layer of conductively-doped polysilicon further comprises forming a layer of polysilicon and conductively doping the layer of polysilicon after formation.

15. The method of claim 6 , wherein forming epitaxial silicon on the patterned first layer of conductive material further comprises forming epitaxial silicon on the patterned first layer of conductive material and conductively doping the epitaxial silicon during formation.

Assignments (8)