IP Library Granted Patent US 7,185,602
Granted Patent B2
US 7,185,602 · App. 10/887,426 · Granted Mar 6, 2007

Ion implantation ion source, system and method

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Quick Facts
Patent No.
US 7,185,602
App. No.
10/887,426
Granted
Mar 6, 2007
Kind
B2
Abstract

An ion implantation device for vaporizing decaborane and other heat-sensitive materials via a novel vaporizer and vapor delivery system and delivering a controlled, low-pressure drop flow of vapors, e.g. decaborane, into the ion source. The ion implantation device includes an ion source which can operate without an arc plasma, which can improve the emittance properties and the purity of the beam and without a strong applied magnetic field, which can improve the emittance properties of the beam. The ion source is configured so that it can be retrofit into the ion source design space of an existing Bernas source-based ion implanters and the like or otherwise enabling compatibility with other ion source designs.

Claims (30)

1. A multi-mode ion source comprising:

an ion source incorporating an ionization chamber for ionizing gas species and configured to have at least two discrete modes of operation, namely, an arc discharge mode, and a non-arc discharge modes;

a cooling mechanism, wherein said ionization chamber is actively cooled by said cooling mechanism; and

a member, wherein said cooling mechanism is configured so that said ionization chamber is disposed in a conductive heat transfer relationship with a member, the temperature of said member being actively controlled defining a temperature controlled body.

2. The ion source as recited in claim 1 , further including a gas interface, wherein said conductive heat transfer relationship includes a gas interface between one or more walls of said ionization chamber and said temperature controlled body.

3. The ion source as recited in claim 1 , wherein said temperature controlled body is water-cooled.

4. The ion source as recited in claim 2 , wherein said temperature controlled body is water cooled.

5. The ion source as recited in claim 1 , wherein said temperature controlled body is heated by a heater element.

6. The ion source as recited in claim 1 , wherein the temperature control is accomplished by a control system.

7. A multi-mode ion source, comprising:

an ion source incorporating an ionization chamber for ionizing gas species and configured to have at least two discrete modes of operation, namely, an arc discharge mode, and a non-arc discharge mode; wherein said non-arc discharge mode is defined by electron impact ionization resulting in a low ion density within said ionization chamber of said ion source, and wherein said ion source includes a system for injection of a directed beam of electrons defining an electron beam into said ionization chamber of said ion source resulting in electron impact ionization in said non arc discharge mode.

8. The ion source as recited in claim 7 , wherein said system includes an electron source for generating said electron beam.

9. The ion source as recited in claim 8 , wherein said electron source is a thermionic emitter of electrons.

10. The ion source as recited in claim 9 , wherein said thermionic emitter is a hot filament.

11. The ion source as recited in claim 9 , wherein said thermionic emitter is an indirectly heated cathode.

12. The ion source as recited in claim 11 , wherein said electron source is external to the ionization chamber of said ion source.

13. The ion source as recited in claim 12 further including a cooled support structure and, wherein said electron source is mounted to a cooled support structure.

14. The ion source as recited in claim 13 , wherein said cooled support structure is configured to be cooled by deionized water.

15. The ion source as recited in claim 13 , wherein said cooled support structure is configured to be cooled through a gas interface between said support structure and an adjacent temperature-controlled body.

16. A multi-mode ion source comprising:

an ion source incorporating an ionization chamber for ionizing gas species and configured to have at least two discrete modes of operation, namely, an arc discharge mode, and a non-arc discharge mode, wherein said arc discharge mode is defined by the formation of a plasma by said arc discharge within said ionization chamber of said ion source, wherein the ion density thus formed in said arc discharge mode being substantially higher than that obtained in said non-arc discharge mode and wherein said ion source includes an electron source in direct contact with said plasma within said ionization chamber such that said plasma is sustained by said electron source in said arc discharge mode.

17. The ion source as recited in claim 16 , wherein said electron source includes a thermionic emitter of electrons.

18. The ion source as recited in claim 17 , wherein said electron source is external to the ionization chamber of said ion source.

19. The ion source as recited in claim 18 , further including a cooled support structure and wherein said electron source is mounted to said cooled support structure.

20. The ion source as recited in claim 19 , wherein said cooled support structure is cooled by deionized water.

21. The ion source as recited in claim 19 , wherein said cooled support structure is cooled through a gas interface between said support structure and an adjacent temperature-controlled body.

22. A multi-mode ion source comprising:

an ion source incorporating an ionization chamber for ionizing gas species and configured to have at least two discrete modes of operation, namely, an arc discharge mode, and a non-arc discharge mode, wherein said arc discharge mode is defined by the formation of a plasma by said arc discharge within said ionization chamber of said ion source, wherein the ion density in said arc discharge mode thus formed being substantially higher than that obtained in said non-arc discharge mode and wherein said ion source includes an electron source in direct contact with said plasma within said ionization chamber such that said plasma is sustained by said electron source in said arc discharge mode and wherein said electron source includes a thermionic emitter of electrons and wherein said thermionic emitter is a hot filament.

23. A multi-mode ion source comprising:

an ion source incorporating an ionization chamber for ionizing gas species and configured to have at least two discrete modes of operation, namely, an arc discharge mode, and a non-arc discharge mode, wherein said arc discharge mode is defined by the formation of a plasma by said arc discharge within said ionization chamber of said ion source, wherein the ion density in said arc discharge mode thus formed being substantially higher than that obtained in said non-arc discharge mode and wherein said ion source includes an electron source in direct contact with said plasma within said ionization chamber such that said plasma is sustained by said electron source in said arc discharge mode and wherein said electron source includes a thermionic emitter of electrons and wherein said thermionic emitter is an indirectly heated cathode.

Assignments (4)
RELEASE OF SECURITY INTEREST Recorded Aug 13, 2008
From: TUNA INVESTMENTS, LLC, AS COLLATERAL AGENT
To: SEMEQUIP, INC.
Reel/Frame 021380/0018 →
SECURITY AGREEMENT Recorded Jul 28, 2008
From: SEMEQUIP, INC.
To: TUNA INVESTMENTS, LLC, AS COLLATERAL AGENT
Reel/Frame 021301/0023 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 21, 2007
From: YU, PETER
To: AMERICAN PROMOTIONAL EVENTS, INC.
Reel/Frame 019890/0165 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 28, 2006
From: HORSKY, THOMAS N.; WILLIAMS, JOHN NOEL
To: SEMEQUIP INC.
Reel/Frame 018686/0104 →