High power semiconductor laser diode
View Patent ↗Semiconductor laser diodes, particularly high power AlGaAs-based ridge-waveguide laser diodes, are often used in opto-electronics as so-called pump laser diodes for fiber amplifiers in optical communication lines. To provide the desired high power output and stability of such a laser diode and avoid degradation during use, the present invention concerns an improved design of such a device, the improvement in particular significantly minimizing or avoiding (front) end section degradation of such a laser diode and significantly increasing long-term stability compared to prior art designs. This is achieved by establishing one or two “unpumped end sections” of the laser diode. One preferred way of providing such an unpumped end section at one of the laser facets ( 10, 12 ) is to insert an isolation layer ( 11, 13 ) of predetermined position, size, and shape between the laser diode's semiconductor material and the usually existing metallization ( 6 ). A further embodiment shows separate, further isolation layers ( 5 ) extending along the laser diode, potentially abutting the ridge waveguide of the laser.
1. A semiconductor ridge waveguide laser diode including
a semiconductor body,
an active region including a ridge waveguide with two end sections,
front and back facets closing said end sections, each with a mirror,
a metallization over at least part of said semiconductor body and said ridge for injecting carriers into said active region, and
means for limiting said injection of carriers at least at one of said end sections, thus providing at least one unpumped end section,
said injection limiting means comprising an isolation layer which
laterally extends contiguously over said ridge waveguide and at least part of said semiconductor body and
longitudinally covers only said one of said end sections.
2. The laser diode according to claim 1 , wherein
two separate injection limiting means are provided, one each at the front and the back end section of the laser diode.
3. The laser diode according to claim 1 , wherein
the isolation layer is located directly under the metallization.
4. The laser diode according to claim 1 , wherein
the isolation layer between the laser diode's active region and the metallization is made from SiO 2 , Al 2 O 3 , TiN or SiN.
5. The laser diode according to claim 1 , wherein
the isolation layer extends under only a fraction of the area of the metallization.
6. The laser diode according to claim 1 , wherein
the isolation layer is about 50 nm thick.
7. The laser diode according to claim 1 , wherein
the isolation layer covers an area of approximately 20 μm×40 μm.
8. The laser diode according to claim 1 , wherein
the isolation layer's longitudinal extension is as long as the mean diffusion lengths of the free carriers within the laser's active region.
9. The laser diode according to claim 1 , wherein
the isolation layer's longitudinal extension is longer than the mean diffusion length of the free carriers within the laser's active region.
10. The laser diode according to claim 1 , wherein
the isolation layer's lateral extension is smaller than the metallization's lateral extension.
11. The laser diode according to claim 1 , wherein
the isolation layer's lateral extension is as wide or wider than the metallization's lateral extension.
12. The laser diode according to claim 1 , further comprising
one or more further isolation layers extending longitudinally along the semiconductor body, preferably substantially abutting the ridge waveguide.
13. The laser diode according to claim 12 , wherein
the further isolation layer is at least partly located between the semiconductor body and the isolation layer of the injection limiting means.
14. The laser diode according to claim 12 , wherein
the further isolation layer extends longitudinally and/or laterally over only a part of the semiconductor body.
15. The laser diode according to claim 12 , wherein
two further isolation layers are provided extending longitudinally up to the edges of the ridge waveguide.
16. The laser diode according to claim 1 , wherein
the laser diode substrate is GaAs, the active region is AlGaAs/InGaAs, and the isolation layer is SiN.
17. The laser diode according to claim 1 , wherein
at least one of the two end sections of the ridge waveguide is unconstricted.
18. The laser diode according to claim 17 , wherein
the two end sections are dimensionally different.
19. The laser diode according to claim 17 , wherein
a single isolation layer is provided, placed over the front end section of the ridge waveguide.
20. The laser diode according to claim 17 , wherein
two isolation layers are provided, one each over the front end section and the back end section of the ridge waveguide.
21. The laser diode according to claim 20 , wherein
at least one of the isolation layers is shorter and/or narrower than the metallization.
22. The laser diode according to claim 20 , wherein
the two isolation layers are of the same shape and/or size.
23. The laser diode according to claim 17 , further comprising
one or more further isolation layers extending along the semiconductor body, preferably substantially abutting the ridge waveguide.
24. The laser diode according to claim 23 , wherein
the further isolation layer is at least partly located between the semiconductor body and the isolation layer of the injection limiting means.
25. The laser diode according to claim 23 , wherein
the further isolation layer extends longitudinally and/or laterally over only a part of the semiconductor body.
26. The laser diode according to claim 23 , wherein
two further isolation layers are provided extending longitudinally up to the edges of the ridge waveguide.