IP Library › Granted Patent US 7,208,867
Granted Patent B2
US 7,208,867 · App. 10/891,277 · Granted Apr 24, 2007

Focusing structure for electron source

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Quick Facts
Patent No.
US 7,208,867
App. No.
10/891,277
Granted
Apr 24, 2007
Kind
B2
Abstract

An electron source includes a planar emission region for generating an electron emission, and a focusing structure for focusing the electron emission into an electron beam.

Claims (5)

1. An emission-focusing structure for an electron source, the source including a substrate, the structure comprising:

an emission electrode on the substrate;

a lens electrode on the substrate, the lens electrode surrounding the emission electrode, wherein the substrate has an emission region;

wherein the electrode has an opening that exposes the emission region; and

wherein the source further comprises a layer on the substrate, the layer including a planar porous silicon electron emission region; a patterning mask on a surface of the layer, and an opening in the patterning mask defining the emission region.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 11, 2011
From: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.; HEWLETT-PACKARD COMPANY
To: SAMSUNG ELECTRONICS CO., LTD.
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