Method and system for cleaning semiconductor elements
View Patent ↗The invention relates to a method and system for cleaning semiconductor elements accommodated in a tank which uses ozonized, deionized (DI) ultrapure water. According to the invention, ozone is generated in an ozone generator ( 3 ) according to the principal of silent electric discharge while admitting highly pure oxygen. Said ozone is fed to a contactor ( 7 ) through which DI water flows. The ozone is then dissolved in the DI water. While optionally admitting additional chemicals, the ozonized DI water is conducted through the tank ( 12 ) holding the semiconductor elements in order to clean the same, and the used DI water is carried away ( 15 ). In order to stabilize the ozone concentration, CO 2 is added to the ozone/oxygen mixture generated by the ozone generator ( 7 ).
1. A method for cleaning semiconductor elements with ozonized deionized water, comprising:
generating a mixture of ozone and oxygen;
providing CO 2 to the mixture of ozone and oxygen;
providing the mixture of CO 2 , ozone and oxygen to a contactor;
providing deionized water to the contactor to dissolve the mixture of CO 2 , ozone and oxygen to produce ozonized deionized water; and
cleaning semiconductor elements with the ozonized deionized water.
2. The method of claim 1 , comprising providing deionized water to the ozonized deionized water.
3. The method of claim 1 , comprising removing spent ozonized deionized water.
4. The method of claim 3 , comprising filtering at least a portion of the spent ozonized deionized water and mixing at least a portion of the filtered ozonized deionized water with ozonized deionized water in the contactor.
5. The method of claim 1 , comprising at least substantially excluding air from a container in which the semiconductor elements are cleaned.
6. The method of claim 1 , wherein providing CO2 to the mixture of ozone and oxygen slows down the decomposition of the ozone.
7. The method of claim 1 wherein providing CO 2 to the mixture of ozone and oxygen comprises adding sufficient CO 2 to decrease the decomposition of the ozone.
8. The method of claim 7 wherein a concentration of CO 2 of less than about 5000 ppm is achieved in the mixture of CO 2 , ozone and oxygen.
9. The method of claim 1 , comprising converting oxygen to ozone using silent electrical discharge.
10. The method of claim 1 , comprising controlling ozone concentration in the ozonized deionized water.
11. A system for cleaning semiconductor elements, comprising:
a source of a mixture of ozone and oxygen;
a CO 2 source coupled to the output of the source of a mixture of ozone and oxygen to provide CO 2 the mixture of ozone and oxygen and to create a CO 2 , ozone and oxygen mixture;
a deionized water source;
a contractor that receives the CO 2 , ozone and oxygen mixture and is coupled to the output of the deionized water source for dissolving the mixture of CO 2 , ozone and oxygen in the deionized water to produce ozonized deionized water; and
a container that contains semiconductor elements and receives the ozonized deionized water to clean the semiconductor elements.
12. The system of claim 11 wherein deionized water is provided to the ozonized deionized water.
13. The system of claim 11 , comprising a filter that filters at least a portion of the spent ozonized deionized water and directs a least a portion of the filtered ozonized deionized water to be mixed with ozonized deionized water in the contactor.
14. The system of claim 11 , comprising an ozone generator for converting oxygen to ozone.
15. The system of claim 14 wherein the ozone generator converts oxygen to ozone using silent electrical discharge.
16. The system of claim 11 wherein the container comprises a seal to exclude air from the container.
17. The system of claim 11 wherein providing CO2 to the mixture of ozone and oxygen slows down the decomposition of the ozone.
18. The system of claim 11 wherein providing CO 2 to the mixture of ozone and oxygen comprises adding sufficient CO 2 to decrease the decomposition of the ozone.
19. The system of claim 18 wherein a concentration of CO 2 of less than about 5000 ppm is achieved in the mixture of CO 2 , ozone and oxygen.
20. The system of claim 11 , comprising a control unit to control ozone concentration in the ozonized deionized water.
21. A system for cleaning semiconductor elements, comprising:
a source of a mixture of ozone and oxygen;
a means for mixing CO 2 with a mixture of ozone and oxygen to create a CO 2 , ozone and oxygen mixture;
a deionized water source;
a contractor that receives the CO 2 , ozone and oxygen mixture and is coupled to the output of the deionized water source for dissolving the mixture of CO 2 , ozone and oxygen in the deionized water to produce ozonized deionized water; and
a container that contains semiconductor elements and receives the ozonized deionized water to clean the semiconductor elements.