Semiconductor optical amplifier with reduced effects of gain saturation
View Patent ↗An active optical device with reduced axial carrier depletion is disclosed. This active optical device includes a substrate layer; a p-doped active layer coupled to the substrate, a semiconductor layer coupled to the active layer, an electrical contact coupled to the substrate layer, and an electrical contact coupled to the semiconductor layer. The p-doped active layer has a central interaction region and a transverse diffusion region. The transverse diffusion region supplies additional carriers to the central interaction region in response to carrier depletion in the central interaction region caused by the interaction of the carriers with a light beam. Also a method of operation and a method of manufacture for the active optical device is disclosed.
1. A method of manufacturing an active optical device having reduced carrier depletion within a p-doped active layer, the method comprising the steps of:
a) providing a substrate layer having a top surface;
b) forming the p-doped active layer on the top surface of the substrate layer;
c) forming a semiconductor layer on the p-doped active layer;
d) defining and etching a mesa structure, including mesa walls, in the p-doped active layer and the semiconductor layer, and exposing portions of the top surface of the substrate;
e) defining and etching a ridge structure in the semiconductor layer;
f) forming a dielectric protection layer over the portions of the top surface of the substrate exposed in step d) and portions of the mesa walls formed in the p-doped active layer;
g) forming a contact layer over the semiconductor layer; and
h) forming electrical contacts over the semiconductor layer.
2. The method of claim 1 , wherein step (b) includes the step of forming the p-doped active layer by metal organic chemical vapor deposition.
3. The method of claim 1 , wherein step (b) includes the step of depositing a plurality of sub-layers to form a quantum well structure.
4. The method of claim 1 , wherein the etching of the mesa walls includes etching mesa walls to achieve a trapezoidal cross-section for the mesa structure.
5. A method of manufacturing an active optical device including a substrate layer, a p-doped active layer and a semiconductor layer, the p-doped active layer and the semiconductor layer being successively formed on a surface of the substrate layer, the active optical device having reduced carrier depletion within the p-doped active layer, the method comprising:
forming a mesa structure by etching portions of the p-doped active layer and the semiconductor layer, and by exposing portions of the surface of the substrate layer;
etching portions of the formed mesa structure, corresponding to the semiconductor layer to form a ridge structure within the mesa structure;
forming a dielectric layer over the exposed portions of the surface of the substrate layer, and the etched portions of p-doped active layer;
forming a contact layer over the semiconductor layer; and
forming electrical contacts over the semiconductor layer.
6. The method of claim 5 , wherein the forming of the mesa structure includes wet etching the semiconductor layer on the p-doped active layer.
7. The method of claim 5 , wherein the ridge structure formed within the mesa structure has a width in a range of about 60%-90% of a width of the formed mesa structure.
8. The method of claim 5 , wherein the ridge structure formed within the mesa structure has a height in a range of about 50%-90% of a height of the formed mesa structure.
9. The method of claim 5 , wherein the forming of the ridge structure includes dry etching the mesa structure.
10. The method of claim 5 , wherein the forming of the dielectric layer comprises:
depositing a dielectric material with an index of refraction lower than those of materials forming the mesa structure.
11. The method of claim 5 , wherein the forming of the dielectric layer comprises:
forming a dielectric layer on exposed portions of the first surface of the substrate layer and the etched portions of p-doped active layer; and
planarizing exposed portions of the dielectric layer.
12. The method of claim 5 , wherein the forming of the contact layer comprises:
forming a p-type semiconductor layer on exposed surfaces of the mesa and ridge structures; and
etching the p-type semiconductor material to remove any of the p-type semiconductor material adhering to the dielectric layer, and to provide a contact layer having a predetermined thickness.
13. The method of claim 5 , further comprising:
forming a single layer coating or a multi-layer anti-reflective coating at respective end portions of the active optical device to prevent optical reflections thereat.
14. A method of manufacturing a semiconductor optical amplifier including a substrate layer, a p-doped active layer and a semiconductor layer, the p-doped active layer and the semiconductor layer being successively formed on a surface of the substrate layer, the semiconductor optical amplifier having reduced carrier depletion within the p-doped active layer, the method comprising:
forming a mesa structure by etching portions of the p-doped active layer and the semiconductor layer, and by exposing portions of the surface of the substrate layer;
forming a ridge structure within the mesa structure by selecting a width and a height of the ridge structure according to a specified optical mode of the active optical device, and etching the ridge structure according to the selected width and the selected height of the ridge structure;
forming a dielectric layer over the exposed portions of the first surface of the substrate layer and the etched portions of p-doped active layer;
forming a contact layer over the semiconductor layer; and
forming electrical contacts over the semiconductor layer.
15. A method of manufacturing a semiconductor optical amplifier including a substrate layer, a p-doped active layer and a semiconductor layer, the p-doped active layer and the semiconductor layer being successively formed on a surface of the substrate layer, the semiconductor optical amplifier having reduced carrier depletion within the p-doped active layer, the method comprising:
forming a mesa structure by etching portions of the p-doped active layer and the semiconductor layer, and by exposing portions of the surface of the substrate layer;
forming a ridge structure within the mesa structure by selecting a width and a height of the ridge structure according to a specified carrier distribution of the active optical device, and etching the ridge structure according to the selected width and the selected height of the ridge structure;
forming a dielectric layer over the exposed portions of the first surface of the substrate layer and the etched portions of p-doped active layer;
forming a contact layer over the semiconductor layer; and
forming electrical contacts over the semiconductor layer.