IP Library › Granted Patent US 7,772,756
Granted Patent B2
US 7,772,756 · App. 10/898,735 · Granted Aug 10, 2010

Light-emitting device including a dual emission panel

Assignee: Semiconductor Energy Laboratory Co., Ltd.
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Quick Facts
Patent No.
US 7,772,756
App. No.
10/898,735
Granted
Aug 10, 2010
Kind
B2
Abstract

There is a problem in a dual emission device emitting light out of both surfaces that an image on the surface and an image on the rear surface are different from each other (either image is mirror-reversed). A dual emission device is disclosed in which either light emitted from the light-emitting device is reflected by glass including a semi-transmissive film to display on glass an image same as another image obtained also from the light-emitting device, and simultaneously, external information can be viewed through the glass. A mirror can be arranged between the dual emission device and the glass including a semitransparent film.

Claims (45)

1. A semiconductor device comprising;

a light-emitting device emitting light out of both an anode and a cathode;

an optical device configured to vary a size of an image displayed by the light-emitting device; and

a film formed over a support dissociated from the light-emitting device,

wherein the light emitting out one of the anode and the cathode is captured by the optical device and entered into the film, and

wherein the optical device is in contact with the light-emitting device.

2. The semiconductor device according to claim 1 , wherein an image produced by reflecting the light entered into the film is an erect image.

3. The semiconductor device according to claim 1 , wherein the film is a semi-transmissive film.

4. A device comprising;

a light-emitting device emitting light out of both an anode and a cathode;

a mirror, and

an optical device configured to vary a size of an image displayed by the light-emitting device,

wherein the light emitting out one of the anode and the cathode is captured by the optical device and entered into the mirror, and

wherein the optical device is in contact with the light-emitting device.

5. The semiconductor device according to claim 4 , wherein an image produced by reflecting the light entered into the mirror is an erect image.

6. A semiconductor device comprising;

a light-emitting device emitting light out of both an anode and a cathode;

an optical device configured to vary a size of an image displayed by the light-emitting device,

a semi-transmissive film formed over a support dissociated from the light-emitting device; and

a mirror between the light-emitting device and the support,

wherein the light emitting out one of the anode and the cathode is captured by the optical device and entered into the semi-transmissive film via reflecting by the mirror, and

wherein the optical device is in contact with the light-emitting device.

7. The semiconductor device according to claim 6 , wherein an image produced by the light entered into the semi-transmissive film is an erect image.

8. The semiconductor device according to claim 6 , wherein the semiconductor device further comprises a device for scaling an image produced by the light emitting out one of the anode and the cathode.

9. A semiconductor device comprising;

a light-emitting device emitting light out of both an anode and a cathode;

an optical device configured to vary a size of an image displayed by the light-emitting device,

a semi-transmissive film formed over a support dissociated from the light-emitting device; and

two mirrors between the light-emitting device and the support,

wherein the light emitting out one of the anode and the cathode is captured by the optical device and entered into the semi-transmissive film via reflecting by the two mirrors, and

wherein the optical device is in contact with the light-emitting device.

10. The semiconductor device according to claim 9 , wherein an image produced by reflecting the light entered into the semi-transmissive film is an erect image.

11. The semiconductor device according to claim 9 , wherein the semiconductor device further comprises a device for scaling an image produced by the light emitting out one of the anode and the cathode.

12. A semiconductor device comprising;

a light-emitting device emitting light out of both an anode and a cathode; and

an optical device configured to vary a size of an image displayed by the light-emitting device,

wherein the anode is made of a conductive polymer that comprises dopant material and conductive filler, and

wherein light emitted through the anode enters the optical device, and

wherein the optical device is in contact with the light-emitting device.

13. A vehicle comprising;

a light-emitting device emitting light out of both an anode and a cathode;

a front glass with a semi-transmissive film, and

an optical device configured to vary a size of an image displayed by the light-emitting device,

wherein the light emitting out one of the anode and the cathode is captured by the optical device and entered into the semi-transmissive film, and

wherein the optical device is in contact with the light-emitting device.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 26, 2004
From: SAKATA, JUNICHIRO; IBE, TAKAHIRO; IKEDA, HISAO
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 015630/0692 →
Priority Claims (1)
JP 2003-285390 · Aug 1, 2003 · national
Continuity (1)
Related Publication 20050024293A1 · Feb 3, 2005