Optical switch
An optical switch in which the adverse effect of heating can be restrained is realized. An optical switch for switching a transmission path of an optical signal by a change in refractive index due to carrier injection comprises: a semiconductor substrate; an optical waveguide layer which is formed on the semiconductor substrate and in which an optical waveguide is formed, the optical signal being incident on the optical waveguide from one side, then branched into two at a halfway part and emitted from the optical waveguide; a first electrode formed on the optical waveguide layer and at a branching part of the optical waveguide; a second electrode formed on the optical waveguide layer and near the branching part of the optical waveguide; and a third electrode formed on the optical waveguide layer and on a side opposite to the first electrode as viewed from the second electrode; wherein when the optical switch is on, carriers are injected from the first and second electrodes, and when the optical switch is off, carriers are injected from the second and third electrodes.
1. An optical switch for switching a transmission path of an optical signal by a change in refractive index due to carrier injection, the optical switch comprising:
a semiconductor substrate;
an optical waveguide layer which is formed on the semiconductor substrate and in which an optical waveguide is formed, the optical signal being incident on the optical waveguide from one side, then branched into two at a halfway part and emitted from the optical waveguide;
a first electrode formed on the optical waveguide layer and at a branching part of the optical waveguide;
a second electrode formed on the optical waveguide layer and near the branching part of the optical waveguide; and
a third electrode formed on the optical waveguide layer and on the same side of the optical waveguide layer as the second electrode, so that the second electrode is between the first electrode and third electrode;
wherein when the optical switch is on, carriers are injected from the first and second electrodes, and when the optical switch is off, carriers are injected from the second and third electrodes.
2. An optical switch for switching a transmission path of an optical signal by a change in refractive index due to carrier injection, the optical switch comprising:
a semiconductor substrate;
an optical waveguide layer which is formed on the semiconductor substrate and in which an optical waveguide is formed, the optical signal being incident on the optical waveguide from one side, then branched into two at a halfway part and emitted from the optical waveguide;
a first electrode formed on the optical waveguide layer and at a branching part of the optical waveguide;
a second electrode formed on an entire rear side of the semiconductor substrate; and
a third electrode formed on the optical waveguide layer and on the same side of the optical waveguide layer as the second electrode, so that the second electrode is between the first electrode and third electrode;
wherein when the optical switch is on, carriers are injected from the first and second electrodes, and when the optical switch is off, carriers are injected from the second and third electrodes.
3. The optical switch as claimed in claim 1 or 2 , wherein the third electrode is formed on the optical waveguide layer and on the halfway Part of the optical waveguide structure.
4. The optical switch as claimed in claim 1 or 2 , wherein the area where the first, second and third electrodes are formed has a structure having a hetero junction or a double hetero structure.
5. The optical switch as claimed in claim 1 , wherein the first, second and third electrodes are formed on first, second and third contact layers formed on the optical waveguide layer, and
the first and third electrodes are made of an n-type semiconductor material, and the second electrode is made of a p-type semiconductor material.
6. The optical switch as claimed in claim 1 , wherein the first, second and third electrodes are formed on first, second and third contact layers formed on the optical waveguide layer, and
the first and third electrodes are made of a p-type semiconductor material, and the second electrode is made of an n-type semiconductor material.
7. The optical switch as claimed in one of claims 1 , 2 , 5 and 6 , wherein the optical waveguide layer has an optical waveguide formed by two linear optical waveguide paths intersecting each other.
8. The optical switch as claimed in one of claims 1 , 2 , 5 and 6 , wherein the optical waveguide layer has an optical waveguide formed by one linear optical waveguide path that is branched at its halfway part at different angles.
9. The optical switch as claimed in one of claims 1 , 2 , 5 and 6 , wherein the semiconductor substrate and the optical waveguide layer are made of an AlGaAs-based semiconductor material.
10. The optical switch as claimed in one of claims 1 , 2 , 5 and 6 , wherein the semiconductor substrate and the optical waveguide layer are made of an InGaAsP-based semiconductor material.
11. The optical switch as claimed in one of claims 1 , 2 , 5 and 6 , wherein the semiconductor substrate and the optical waveguide layer are made of a SiGe-based semiconductor material.