Semiconductor device
View Patent ↗A portion-to-be-melted of a fuse is surrounded by plates, so that heat to be generated in a meltdown portion of the fuse under current supply can be confined or accumulated in the vicinity of the meltdown portion of the fuse. This makes it possible to facilitate meltdown of the fuse. The meltdown portion of the fuse in a folded form, rather than in a single here a fuse composed of a straight-line form, is more successful in readily concentrating the heat generated in the fuse under current supply into the meltdown portion, and in further facilitating the meltdown of the fuse.
1. A semiconductor device comprising:
a substrate;
an insulating layer formed on said substrate;
a fuse element that is brought into a blown state by a current supplied thereto and is embedded into said insulating layer;
a first conductive plate formed on said insulating layer to cover said fuse element; and
a second conductive plate embedded into said insulating layer between said fuse element and said substrate, said second conductive plate cooperating with said first conductive plate to sandwich said fuse element therebetween,
wherein said fuse element comprises first and second terminals between which said current flows and a body which is formed between said first and second terminals, and said first conductive plate covers entirely at least said body of said fuse element, and
wherein said body of said fuse element is narrower than said first and second terminals and is bent a plurality of times.
2. The device as claimed in claim 1 , wherein each of said first and second conductive plates covers entirely at least said body of said fuse element.
3. The device as claimed in claim 1 , wherein said fuse element is electrically isolated from said first and second conductive plates.
4. A semiconductor device, comprising:
a substrate;
an insulating layer formed on said substrate;
a fuse element that is brought into a blown state by a current supplied thereto and is embedded into said insulating layer; and
a first conductive plate embedded into said insulating layer between said fuse element and said substrate,
wherein said fuse element is electrically isolated from said first conductive plate.
5. The device as claimed in claim 4 , further comprising first and second conductive walls that are embedded into said insulating layer to sandwich said fuse element therebetween with an intervention of a part of said insulating layer, each of said first and second conductive walls being larger in thickness than said fuse element.
6. The device as claimed in claim 5 , further comprising a second conductive plate formed on said insulating layer to cover said fuse element, said second conductive plate cooperating with said first conductive plate to sandwich said fuse element therebetween.