IP Library Granted Patent US 7,253,502
Granted Patent B2
US 7,253,502 · App. 10/900,385 · Granted Aug 7, 2007

Circuitized substrate with internal organic memory device, electrical assembly utilizing same, and information handling system utilizing same

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Quick Facts
Patent No.
US 7,253,502
App. No.
10/900,385
Granted
Aug 7, 2007
Kind
B2
Abstract

A circuitized substrate comprised of at least one dielectric material having an electrically conductive pattern thereon. At least part of the pattern is used as the first layer of an organic memory device which further includes at least a second dielectric layer over the pattern and a second pattern aligned with respect to the lower part for achieving several points of contact to thus form the device. The substrate is preferably combined with other dielectric-circuit layered assemblies to form a multilayered substrate on which can be positioned discrete electronic components (e.g., a logic chip) coupled to the internal memory device to work in combination therewith. An electrical assembly capable of using the substrate is also provided, as is an information handling system adapted for using one or more such electrical assemblies as part thereof.

Claims (33)

1. A circuitized substrate comprising:

a first layer of organic dielectric material; and

a first electrically conductive circuit formed on said first layer of organic dielectric material, said first electrically conductive circuit including a first part having a plurality of lines each of a first width and a second part comprising a highly dense pattern of substantially parallel lines each of a second width less than said first width of said lines of said first part of said first electrically conductive circuit;

a thin, second layer of organic polymer material positioned on said second part of said first electrically conductive circuit comprising said highly dense pattern of substantially parallel lines; and

a second electrically conductive circuit positioned on said thin, second layer of said organic polymer material and also comprising a highly dense pattern of substantially parallel lines each having a width substantially the same as said second width of said lines of said second part of said first electrically conductive circuit, part of said first layer of organic dielectric material, said second part of said first electrically conductive circuit, said thin, second layer of organic polymer material and said second electrically conductive circuit forming an organic memory device adjacent said first part of said first electrically conductive circuit;

wherein said thin, second layer of organic polymer material includes opposing ends, said substantially parallel lines of said second electrically conductive circuit further extending down the sides of said opposing ends of said thin, second layer of organic polymer material and onto said first layer of organic dielectric material.

2. The circuitized substrate of claim 1 further including a third layer of dielectric material positioned on said second electrically conductive circuit, said first part of said first electrically conductive circuit and said first layer of said organic dielectric material.

3. The circuitized substrate of claim 2 further including a conductive circuit layer positioned on said third layer of dielectric material and a plurality of thru-holes within said third layer of dielectric material, said plurality of thru-holes electrically coupling selected lines of said second part of said first electrically conductive circuit to said conductive circuit layer positioned on said third layer of dielectric material.

4. The circuitized substrate of claim 1 wherein said thin, second layer of organic polymer material comprises a ferroelectric thin film material selected from the group consisting of polyvinylidene and copolymers thereof, nylon and copolymers thereof, cyanopolymers and copolymers thereof, and combinations thereof.

5. The circuitized substrate of claim 4 wherein said ferroelectric thin film material of said thin, second layer of organic polymer material is polyvinylidene fluoridetrifluoroethylene, and has a thickness of from about 0.5 to about three microns.

6. The circuitized substrate of claim 1 wherein said substantially parallel lines of said second electrically conductive circuit formed on said thin, second layer of organic polymer material and said substantially parallel lines of said second part of said first electrically conductive circuit cross each other at predetermined locations to define points of contact at said predetermined locations to thereby define said organic memory device.

7. The circuitized substrate of claim 1 wherein selected ones of said lines of said second part of said first electrically conductive circuit and said second electrically conductive circuit each have a width of from about five to about fifty microns.

8. The circuitized substrate of claim 1 wherein said lines of said first electrically conductive circuit and said second electrically conductive circuit are each comprised of a metal selected from the group consisting of copper, copper alloy, aluminum, aluminum alloy, conductive polymers, and combinations thereof.

9. The circuitized substrate of claim 1 wherein said first layer of organic dielectric material comprises a polymer material selected from the group of polymer materials consisting of fiberglass-reinforced epoxy resins, polytetrafluoroethylene, polyimides, polyamides, cyanate resins, photoimageable materials, and combinations thereof.

10. An electrical assembly comprising:

a circuitized substrate including a first layer of organic dielectric material, a first electrically conductive circuit formed on said first layer of organic dielectric material, said first electrically conductive circuit including a first part having a plurality of lines each of a first width and a second part comprising a highly dense pattern of substantially parallel lines each of a second width less than said first width of said lines of said first part of said first electrically conductive circuit; a thin, second layer of organic polymer material positioned on said second part of said first electrically conductive circuit comprising said highly dense pattern of substantially parallel lines, and a second electrically conductive circuit positioned on said thin, second layer of organic polymer material and also comprising a highly dense pattern of substantially parallel lines each having a width substantially the same as said second width of said lines of said second part of said first electrically conductive circuit, part of said first layer of organic dielectric material, said second part of said first electrically conductive circuit, said thin, second layer of organic polymer material and said second electrically conductive circuit forming an organic memory device adjacent said first part of said first electrically conductive circuit;

wherein said thin, second layer of organic polymer material includes opposing ends, said substantially parallel lines of said second electrically conductive circuit further extending down the sides of said opposing ends of said thin, second layer of organic polymer material and onto said first layer of organic dielectric material; and

at least one electrical component positioned on said circuitized substrate and electrically coupled to said first electrically conductive circuit.

11. The electrical assembly of claim 10 wherein said thin, second layer of organic polymer material comprises a ferroelectric thin film material selected from the group consisting of polyvinylidene and copolymers thereof, nylon and copolymers thereof, cyanopolymers and copolymers thereof, and combinations thereof.

12. The electrical assembly of claim 10 further including a third layer of dielectric material positioned on said second electrically conductive circuit, said first part of said first electrically conductive circuit and said first layer of organic dielectric material.

13. The electrical assembly of claim 12 further including a conductive circuit layer positioned on said third layer of dielectric material and a plurality of thru-holes within said third layer of dielectric material, said plurality of thru-holes electrically coupling selected lines of said second part of said first electrically conductive circuit to said conductive circuit layer positioned on said third layer of dielectric material.

14. The electrical assembly of claim 10 wherein selected ones of said lines of said second part of said first electrically conductive circuit and said second electrically conductive circuit each have a width of from about five to about fifty microns.

15. The electrical assembly of claim 10 wherein said first layer of organic dielectric material comprises a polymer material selected from the group of polymer materials consisting of fiberglass-reinforced epoxy resins, polytetrafluoroethylene, polyimides, polyamides, cyanate resins, photoimageable materials, and combinations thereof.

16. The electrical assembly of claim 10 wherein said substantially parallel lines of said second electrically conductive circuit formed on said thin, second layer of organic polymer material and said substantially parallel lines of said second part of said first electrically conductive circuit cross each other at predetermined locations to define points of contact at said predetermined locations to thereby define said organic memory device.

17. The electrical assembly of claim 10 wherein said at least one electrical component positioned on said circuitized substrate and electrically coupled to said first electrically conductive circuit comprises a chip carrier.

18. The electrical assembly of claim 10 wherein said at least one electrical component positioned on said circuitized substrate and electrically coupled to said first electrically conductive circuit comprises a semiconductor chip.

19. An information handling system comprising:

a housing;

an electrical assembly positioned substantially within said housing and including a circuitized substrate including a first layer of organic dielectric material, a first electrically conductive circuit formed on said first layer of organic dielectric material, said first electrically conductive circuit including a first part having a plurality of lines each of a first width and a second part comprising a highly dense pattern of substantially parallel lines each of a second width less than said first width of said lines of said first part of said first electrically conductive circuit; a thin, second layer of organic polymer material positioned on said second part of said first electrically conductive circuit comprising said highly dense pattern of substantially parallel lines; and a second electrically conductive circuit positioned on said thin, second layer of organic polymer material and also comprising a highly dense pattern of substantially parallel lines each having a width substantially the same as said second width of said lines of said second part of said first electrically conductive circuit, part of said first layer of organic dielectric material, said second part of said first electrically conductive circuit, said thin, second layer of organic polymer material and said second electrically conductive circuit forming an organic memory device adjacent said first part of said first electrically conductive circuit; wherein said thin, second layer of organic polymer material includes opposing ends, said substantially parallel lines of said second electrically conductive circuit further extending down the sides of said opposing ends of said thin, second layer of organic polymer material and onto said first layer of organic dielectric material; and

at least one electrical component positioned on said circuitized substrate of said electrical assembly and electrically coupled to said first electrically conductive circuit of said circuitized substrate.

20. The invention of claim 19 wherein said information handling system comprises a personal computer.

21. The invention of claim 19 wherein said information handling system comprises a mainframe computer.

22. The invention of claim 19 wherein said information handling system comprises a computer server.

Assignments (9)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 16, 2015
From: ENDICOTT INTERCONNECT TECHNOLOGIES, INC.
To: I3 ELECTRONICS, INC.
Reel/Frame 035442/0569 →
RELEASE OF SECURITY INTEREST Recorded Feb 26, 2015
From: MAINES, WILLIAM; MAINES, DAVID
To: ENDICOTT INTERCONNECT TECHNOLOGIES, INC.
Reel/Frame 035098/0968 →
SECURITY AGREEMENT Recorded Jun 12, 2013
From: ENDICOTT INTERCONNECT TECHNOLOGIES, INC.
To: MAINES, WILLIAM; MAINES, DAVID
Reel/Frame 030599/0918 →
SECURITY AGREEMENT Recorded May 6, 2013
From: ENDICOTT INTERCONNECT TECHNOLOGIES, INC.; EI TRANSPORTATION COMPANY LLC; ENDICOTT MEDTECH, INC.; INTEGRIAN HOLDINGS, LLC
To: M&T BANK
Reel/Frame 030359/0057 →
ASSIGNMENT OF SECURITY AGREEMENT Recorded Mar 6, 2013
From: PNC BANK, NATIONAL ASSOCIATION
To: INTEGRIAN HOLDINGS, LLC
Reel/Frame 029938/0823 →
SECURITY AGREEMENT Recorded May 14, 2012
From: ENDICOTT INTERCONNECT TECHNOLOGIES, INC.; EI TRANSPORTATION COMPANY LLC; ENDICOTT MEDTECH, INC.
To: PNC BANK, NATIONAL ASSOCIATION
Reel/Frame 028230/0798 →
RELEASE BY SECURED PARTY Recorded May 14, 2012
From: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
To: ENDICOTT INTERCONNECT TECHNOLOGIES, INC.
Reel/Frame 028230/0611 →
SECURITY AGREEMENT Recorded Dec 3, 2008
From: ENDICOTT INTERCONNECT TECHNOLOGIES, INC.
To: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 021912/0908 →
RELEASE OF SECURITY INTEREST Recorded Nov 20, 2008
From: WACHOVIA CAPITAL FINANCE CORPORATION
To: ENDICOTT INTERCONNECT TECHNOLOGIES, INC.
Reel/Frame 021861/0869 →