CMOS image sensor and method for detecting color sensitivity thereof

1. A CMOS image sensor comprising:

a semiconductor substrate having an active region;

a photodiode formed in the active region of the semiconductor substrate, and generating an optical electric charge in accordance with irradiation of light;

an insulating interlayer formed on an entire surface of the semiconductor substrate; and

a micro lens formed on the insulating interlayer in perpendicular to the photodiode,

wherein, a back-bias voltage is applied to the semiconductor substrate to vary a width of a depletion area of the photodiode and the value of the back-bias voltage corresponds to a wavelength of red, green or blue light.

2. The CMOS image sensor of claim 1 , further comprising:

a back-bias voltage generation part converting the back-bias voltage to a plurality of different values;

an optical electric charge transmission part formed in the active region of the semiconductor substrate, and transmitting the optical electric charge generated in the photodiode; and

an optical color sensitivity calculation part formed in the active region of the semiconductor substrate, and calculating the color sensitivity of red, green and blue light in accordance with an optical wavelength within the depletion area from the width of the depletion area of the photodiode and a current value of the optical electric charge.

3. The CMOS image sensor of claim 1 , further comprising a planarization layer between the insulating interlayer and the micro lens.

4. A CMOS image sensor comprising:

a p-type semiconductor substrate having a plurality of active regions;

a plurality of photodiodes formed in the respective active regions of the p-type semiconductor substrate, and converting light signals to electric signals;

a plurality of p-type impurity regions formed on the p-type semiconductor substrate at one side in each photodiode;

an insulating interlayer formed on the p-type semiconductor substrate; and

a plurality of micro lens formed on the insulating interlayer corresponding to the photodiodes,

wherein, different back-bias voltages are applied to the p-type impurity regions to vary a width of a depletion area in each photodiode and the back-bias voltages applied to the p-type impurity region each correspond to a wavelength of blue, green and red light.

5. The CMOS image sensor of claim 4 , further comprising a planarization layer between the insulating interlayer and the micro lens.

6. A method for sensing optical color sensitivity of a CMOS image sensor, having a photodiode in an active region of a semiconductor substrate without forming a color filter layer, comprising:

applying a first back-bias voltage to the semiconductor substrate so as to form a first width in a depletion area of the photodiode;

measuring a first current value of an optical electric charge generated in the photodiode in accordance with the applied first back-bias voltage;

applying a second back-bias voltage to the semiconductor substrate so as to form a second width in a depletion area of the photodiode;

measuring a second current value of an optical electric charge generated in the photodiode in accordance with the applied second back-bias voltage;

applying a third back-bias voltage to the semiconductor substrate so as to form a third width in a depletion area of the photodiode;

measuring a third current value of an optical electric charge generated in the photodiode in accordance with the applied third back-bias voltage; and

calculating the optical color sensitivity by applying the measured first, second and third current values.

7. The method of claim 6 , wherein the first, second and third back-bias voltages are respectively corresponding to the wavelength of blue, green and red light.

8. The method of claim 6 , wherein any one of the first, second and third back-bias voltages is set as 0V.

9. A method for sensing optical color sensitivity of a CMOS image sensor, having at least a first, a second and a third photodiode, at least a first, a second and a third impurity region to apply a back-bias voltage to each photodiode without forming a color filter layer, comprising:

applying first, second and third back-bias voltages different from one another to the first, second and third impurity regions;

measuring first, second and third current values of optical electric charges generated in the first, second and third photodiodes in accordance with the applied first, second and third back-bias voltages; and

calculating the color sensitivity of light by applying the measured first, second and third current values.

10. The method of claim 9 , wherein the first, second and third back-bias voltages are respectively corresponding to the wavelength of blue, green and red light.

11. The method of claim 9 , wherein any one of the first, second and third back-bias voltages is set as 0V.