Semiconductor device
A semiconductor device of the present invention comprises: a silicon substrate; a gate insulating film on the silicon substrate; and a gate electrode on the gate insulating film, wherein the gate insulating film includes: a first insulating film; a second insulating film on the first insulating film; and a metal nitride film on the second insulating film. The metal nitride film may be either AlN or Hf 3 N 4 . The metal nitride film may include nitrides of two or more different metals.
1 . A semiconductor device comprising:
a silicon substrate;
a gate insulating film on said silicon substrate; and
a gate electrode on said gate insulating film, wherein said gate insulating film includes:
a first insulating film;
a second insulating film on said first insulating film; and
a metal nitride film on said second insulating film.
2 . The semiconductor device according to claim 1 , wherein:
equivalent oxide thickness of said gate insulating film is between 1.2 nm and 1.5 nm;
said first insulating film is between 0.5 nm and 1.0 nm thick; and
said metal nitride film is between 0.3 nm and 1.0 nm thick.
3 . The semiconductor device according to claim 1 , wherein said metal nitride film is one of an AlN film and an Hf 3 N 4 film.
4 . The semiconductor device according to claim 1 , wherein said metal nitride film includes at least two different nitrides.
5 . The semiconductor device according to claim 4 , wherein said metal nitride film includes a nitride of Al and a nitride of Hf.
6 . The semiconductor device according to claim 1 , wherein said first insulating film is includes at least one of an SiON film and an SiO 2 film.
7 . The semiconductor device according to claim 1 , wherein said first insulating film contains nitrogen in a concentration between 0.5 atm % and 30 atm %.
8 . The semiconductor device according to claim 1 , wherein said second insulating film is a high dielectric constant insulating film.
9 . A semiconductor device comprising:
a silicon substrate;
a gate insulating film on said silicon substrate; and
a gate electrode on said gate insulating film, wherein said gate insulating film includes:
a first insulating film;
a second insulating film on said first insulating film; and
a metal oxynitride film on said second insulating film.
10 . The semiconductor device according to claim 9 , wherein said metal oxynitride film is one of an AlON film and an HfON film.
11 . The semiconductor device according to claim 9 , wherein said metal oxynitride film includes oxynitrides of at least two different metals.
12 . The semiconductor device according to claim 11 , wherein said metal oxynitride film includes oxynitrides of Al and Hf.
13 . The semiconductor device according to claim 9 , wherein said first insulating film is includes at least one of an SiON film and an SiO 2 film.
14 . The semiconductor device according to claim 9 , wherein said first insulating film contains nitrogen in a concentration between 0.5 atm % and 30 atm %.
15 . The semiconductor device according to claim 9 , wherein said second insulating film is a high dielectric constant insulating film.
16 . The semiconductor device according to claim 15 , wherein said high dielectric constant insulating film includes at least one material selected from the group consisting of MgO, Sc 2 O 3 , Y 2 O 3 , La 2 O 3 , Pr 2 O 3 , Nd 2 O 3 , Sm 2 O 3 , EuO, Gd 2 O 3 , Tb 2 O 3 , Dy 2 0 3 , Ho 2 0 3 , Er 2 O 3 , Tm 2 O 3 , Lu 2 O 3 , ZrO 2 , HfO 2 , and Al 2 O 3 .
17 . The semiconductor device according to claim 15 , wherein said high dielectric constant insulating film is a multilayer film including an SiO 2 film and a film including at least one material selected from the group consisting of MgO, Sc 2 O 3 , Y 2 O 3 , La 2 O 3 , Pr 2 O 3 , Nd 2 O 3 , Sm 2 O 3 , EuO, Gd 2 O 3 , Tb 2 O 3 , Dy 2 O 3 , Ho 2 O 3 , Er 2 O 3 , Tm 2 O 3 , Lu 2 O 3 , ZrO 2 , HfO 2 , and Al 2 O 3 .
18 . The semiconductor device according to claim 15 , wherein said high dielectric constant insulating film is at least one material mixed with SiO 2 and selected from the group consisting of MgO, Sc 2 O 3 , Y 2 O 3 , La 2 O 3 , Pr 2 O 3 , Nd 2 O 3 , Sm 2 0 3 , EuO, Gd 2 O 3 , Tb 2 O 3 , Dy 2 O 3 , Ho 2 O 3 , Er 2 O 3 , Tm 2 O 3 , Lu 2 O 3 , ZrO 2 , HfO 2 , and Al 2 O 3 .
19 . The semiconductor device according to claim 15 , wherein said high dielectric constant insulating film is a multilayer film including an SiO 2 film and a film including at least one material mixed with SiO 2 , said at least one material being selected from the group consisting of MgO, Sc 2 O 3 , Y 2 O 3 , La 2 O 3 , Pr 2 O 3 , Nd 2 O 3 , Sm 2 O 3 , EuO, Gd 2 O 3 , Tb 2 O 3 , Dy 2 O 3 , Ho 2 O 3 , Er 2 O 3 , Tm 2 O 3 , Lu 2 O 3 , ZrO 2 , HfO 2 , and Al 2 O 3 .
20 . A semiconductor device comprising:
a silicon substrate;
a gate insulating film on said silicon substrate; and
a gate electrode on said gate insulating film, wherein said gate insulating film includes:
a silicon-containing oxide film; and
a metal nitride film on said silicon-containing oxide film.
21 . The semiconductor device according to claim 20 , wherein said silicon-containing oxide film includes at one of an SiON film and an SiO 2 film.
22 . A semiconductor device comprising:
a silicon substrate;
a gate insulating film on said silicon substrate; and
a gate electrode on said gate insulating film, wherein said gate insulating film includes:
a silicon-containing oxide film; and
a metal oxynitride film on said silicon-containing oxide film.
23 . The semiconductor device according to claim 22 , wherein said silicon-containing oxide film includes at least one of an SiON film and an SiO 2 film.