A metal layer structure is disclosed. The metal layer structure includes a substrate, a first dielectric layer on a surface of the substrate, and at least one first conductor and at least one second conductor on the first dielectric layer. The second conductor has at least one thin portion.
1. A metal layer structure comprising:
a substrate;
a first dielectric layer on a surface of the substrate;
at least one first conductor on the first dielectric layer;
at least one second conductor on the first dielectric layer, the second conductor having at least one thin portion;
a second dielectric layer on the first dielectric layer that covers the first conductor and the second conductor, wherein the second dielectric layer comprises a first opening exposing the first conductor and a second opening exposing the thin portion of the second conductor; and
a third dielectric layer disposed on the second dielectric layer for covering the exposed thin portion of the second conductor.
2. The metal layer structure of claim 1 wherein the second conductor has at least one thick portion.
3. The metal layer structure of claim 2 wherein a thickness of the first conductor is equal to a thickness of the thick portion.
4. The metal layer structure of claim 2 wherein a thickness of the thick portion is approximately 12 k Å, and a thickness of the thin portion is approximately 5 k Å.
5. The metal layer structure of claim 1 wherein the second dielectric layer is an oxide layer.
6. The metal layer structure of claim 1 wherein a thickness of the second dielectric layer is approximately 1 k Å.
7. The metal layer structure of claim 1 wherein the surface of the substrate further comprises at least one fourth dielectric layer and at least one metal structure disposed in the fourth dielectric layer.
8. The metal layer structure of claim 7 wherein the metal structure comprises copper (Cu) or aluminum (Al).
9. A metal layer structure comprising:
a substrate;
a first dielectric layer on a surface of the substrate;
at least one first conductor on the first dielectric layer;
at least one second conductor on the first dielectric layer;
a second dielectric layer on the first dielectric layer that covers the first conductor and the second conductor, wherein the second dielectric layer comprises a first opening exposing the first conductor and a second opening exposing the second conductor; and
a third dielectric layer on the second dielectric layer for covering the exposed portion of the second conductor;
wherein the first conductor and the second conductor have a first thickness and a second thickness, respectively, and the first thickness and the second thickness impart different functions to the first conductor and second conductor, respectively.
10. The metal layer structure of claim 9 wherein the first thickness is approximately 12 k Å, and the second thickness is approximately 5 k Å.
11. The metal layer structure of claim 9 wherein the second dielectric layer is an oxide layer.
12. The metal layer structure of claim 9 wherein a thickness of the second dielectric layer is approximately 1 k Å.
13. The metal layer structure of claim 9 wherein the surface of the substrate further comprises at least one fourth dielectric layer and at least one metal structure disposed in the fourth dielectric layer.
14. The metal layer structure of claim 13 wherein the metal structure comprises copper (Cu) or aluminum (Al).
15. A fuse structure comprising:
a substrate;
a first dielectric layer on a surface of the substrate;
at least one first conductor on the first dielectric layer;
at least one second conductor on the first dielectric layer;
a second dielectric layer on the first dielectric layer that covers the first conductor and the second conductor, wherein the second dielectric layer comprises a first opening exposing the first conductor and a second opening exposing the second conductor; and
a third dielectric layer on the second dielectric layer for covering the exposed portion of the second conductor;
wherein the first conductor having a first thickness is used as a bonding pad, and the second conductor having a second thickness smaller than the first thickness is used as a fuse.
16. The fuse structure of claim 15 wherein the first thickness is approximately 12 k Å, and the second thickness is approximately 5 k Å.
17. The fuse structure of claim 15 wherein the second dielectric layer is an oxide layer.
18. The fuse structure of claim 15 wherein a thickness of the second dielectric layer is approximately 1 k Å.
19. The fuse structure of claim 15 wherein the surface of the substrate further comprises at least one fourth dielectric layer and at least one metal structure disposed in the fourth dielectric layer.
20. The fuse structure of claim 19 wherein the metal structure comprises copper (Cu) or aluminum (Al).
21. A fuse structure comprising:
a substrate;
a first dielectric layer on a surface of the substrate;
at least one fuse on the first dielectric layer, the fuse having a thin portion and a thick portion;
a second dielectric layer on the first dielectric layer that covers the thick portion;
a first opening in the second dielectric layer exposing the thin portion;
at least one bonding pad on the first dielectric layer;
a second opening in the second dielectric layer exposing the bonding pad; and
a third dielectric layer on the second dielectric layer that covers the thin portion of the fuse.
22. The fuse structure of claim 21 wherein a thickness of the thick portion is approximately 12 k Å, and a thickness of the thin portion is approximately 5 k Å.
23. The fuse structure of claim 21 wherein the third dielectric layer is an oxide layer.
24. The fuse structure of claim 21 wherein a thickness of the third dielectric layer is approximately 1 k Å.
25. The fuse structure of claim 21 wherein the surface of the substrate further comprises at least one fourth dielectric layer and at least one metal structure disposed in the fourth dielectric layer.
26. The fuse structure of claim 25 wherein the metal structure comprises copper (Cu) or aluminum (Al).