Methodology for recovery of hot carrier induced degradation in bipolar devices
View Patent ↗A method for recovery of degradation caused by avalanche hot carriers is provided that includes subjecting an idle bipolar transistor exhibiting avalanche degradation to a thermal anneal step which increases temperature of the transistor thereby recovering the avalanche degradation of the bipolar transistor. In one embodiment, the annealing source is a self-heating structure that is a Si-containing resistor that is located side by side with an emitter of the bipolar transistor. During the recovering step, the bipolar transistor including the self-heating structure is placed in the idle mode (i.e., without bias) and a current from a separate circuit is flown through the self-heating structure. In another embodiment of the present, the annealing step is a result of providing a high forward current (around the peak fT current or greater) to the bipolar transistor while operating below the avalanche condition (V″ CB of less than 1 V). Under the above conditions, about 40% or greater of the degradation can be recovered. In yet another embodiment of the present invention, the thermal annealing step may include a rapid thermal anneal (RTA), a furnace anneal, a laser anneal or a spike anneal.
1. A method of recovering avalanche degradation in a bipolar transistor comprising:
providing an idle bipolar transistor including a Si-containing semiconductor substrate having a collector located therein, a base located atop said collector, and an emitter located atop said base, said emitter having extended portions which are self-aligned to outer edges of said base, said extended portions of said emitter serve as a heating structure; and
subjecting said idle bipolar transistor exhibiting avalanche degradation to a thermal anneal step which causes an increase in temperature of the idle bipolar transistor thereby recovering said avalanche degradation of said idle bipolar transistor.
2. The method of claim 1 wherein said self-heating structure is a resistor.
3. The method of claim 1 wherein said self-heating structure and said emitter are comprised of a doped semiconductor material.
4. The method of claim 3 wherein said doped semiconductor material comprises Si, polySi, or SiGe.
5. The method of claim 1 wherein a current is supplied to said self-heating structure during said subjecting step.
6. The method of claim 5 wherein said current is supplied by a circuit that is internal or external to said idle bipolar transistor.
7. The method of claim 1 wherein during said subjecting step said idle bipolar transistor is floating.
8. The method of claim 1 wherein said thermal anneal step comprises applying a forward current to said idle bipolar transistor, while operating below a collector-base voltage of less than 1 V.
9. The method of claim 8 wherein said forward current is about the peak of the unity gain frequency fT current or greater.
10. The method of claim 1 wherein said thermal anneal step comprises a rapid thermal anneal (RTA), a furnace anneal, a laser anneal or a spike anneal.
11. A method of recovering avalanche degradation in a bipolar transistor comprising:
providing an idle structure including a bipolar transistor including a Si-containing semiconductor substrate having a collector located therein, a base located atop said collector, and an emitter located atop said base, said emitter having extended portions which are self-aligned to outer edges of said base, said extended portions of said emitter serve as a heating structure; and
subjecting said an idle structure including said bipolar transistor to a thermal anneal step causing an increase in temperature of the bipolar transistor thereby recovering avalanche degradation of said bipolar transistor, wherein said thermal anneal step comprises applying a forward current to said bipolar transistor, while operating the bipolar transistor at a collector-base voltage of less than about 1 V.