Temperature-compensated bias circuit for power amplifier
View Patent ↗Provided is a temperature-compensated bias circuit for a power amplifier, in which a first resistor (Rref) connected to a reference voltage is connected to a base terminal of a third transistor (Q 3 ) and an emitter terminal of the third transistor is connected to a first diode (D 1 ). The temperature-compensated bias circuit includes a second resistor (R 1 ) connected to the reference voltage, a third resistor (R 2 ) connected to the second resistor in series, a fourth resistor (Rc) having one terminal connected to the reference voltage, a fifth resistor (Re) having one terminal connected to ground, a bias transistor (Q 4 ) having a base terminal connected to a contact point (VS) between the second resistor and the third resistor, a collector terminal connected to the other terminal of the fourth resistor, and an emitter terminal connected to the other terminal of the fifth resistor, and a sixth resistor (Rf) connected between a collector terminal of the third transistor and a collector terminal of the bias transistor.
1. A temperature-compensated bias circuit for a power amplifier comprising:
a first resistor (Rref) connected to a reference voltage is connected to a base terminal of a third transistor (Q 3 ) and an emitter terminal of the third transistor is connected to a first diode (D 1 );
a second resistor (R 1 ) connected to the reference voltage;
a third resistor (R 2 ) connected to the second resistor in series;
a fourth resistor (Rc) having one terminal connected to the reference voltage;
a fifth resistor (Re) having one terminal connected to ground;
a bias transistor (Q 4 ) having a base terminal connected to a contact point (VS) between the second resistor and the third resistor, a collector terminal connected to the other terminal of the fourth resistor, and an emitter terminal connected to the other terminal of the fifth resistor; and
a sixth resistor (Rf) connected between a collector terminal of the third transistor and a collector terminal of the bias transistor.
2. The temperature-compensated bias circuit of claim 1 , wherein the voltage of the collector terminal of the bias transistor is determined by a voltage of the contact point between the second resistor and the third resistor.
3. The temperature-compensated bias circuit of claim 1 , wherein the voltage of the collector terminal of the bias transistor is changed according to a value of the fourth resistor.
4. A temperature-compensated bias circuit for a power amplifier comprising:
a first resistor (Rref) connected to a reference voltage is connected to a base terminal of a third transistor (Q 3 ) and an emitter terminal of the third transistor is connected to a first diode (D 1 );
a second diode (D 2 ) connected to the reference voltage;
a second resistor (R 1 ) connected to the second diode;
a third resistor (R 2 ) connected to the second resistor in series;
a fourth resistor (Rc) having one terminal connected to the reference voltage;
a fifth resistor (Re) having one terminal connected to ground;
a bias transistor (Q 4 ) having a base terminal connected to a contact point (VS) between the second resistor and the third resistor, a collector terminal connected to the other terminal of the fourth resistor, and an emitter terminal connected to the other terminal of the fifth resistor; and
a sixth resistor (Rf) connected between a collector terminal of the third transistor and the collector terminal of the bias transistor.
5. The temperature-compensated bias circuit of claim 4 , wherein the voltage of the collector terminal of the bias transistor is determined by a voltage of the contact point between the second resistor and the third resistor.
6. The temperature-compensated bias circuit of claim 4 , wherein the voltage of the collector terminal of the bias transistor is changed according to a value of the fourth resistor.
7. The temperature-compensated bias circuit of claim 2 , wherein the second diode is disposed between the second resistor and the contact point.
8. A temperature-compensated bias circuit for a power amplifier comprising:
a first resistor (Rref) connected to a reference voltage is connected to a base terminal of a third transistor (Q 3 ) and an emitter terminal of the third transistor is connected to a first diode (D 1 );
a second resistor (R 1 ) connected to the reference voltage;
a third resistor (R 2 ) connected to the second resistor in series;
a sixth resistor (Re) having one terminal connected to ground;
a bias transistor (Q 4 ) having a base terminal connected to a contact point (VS) between the second resistor and the third resistor and an emitter terminal connected to the other terminal of the sixth resistor; and
a seventh resistor (Rf) connected between a collector terminal of the third transistor (Q 3 ) and a collector terminal of the bias transistor.
9. The temperature-compensated bias circuit of claim 8 , wherein the voltage of the collector terminal of the bias transistor is determined by a voltage of the contact point between the second resistor and the third resistor.
10. A temperature-compensated bias circuit for a power amplifier comprising:
a first resistor (Rref) connected to a reference voltage is connected to a base terminal of a third transistor (Q 3 ) and an emitter terminal of the third transistor is connected to a first diode (D 1 );
a second diode (D 2 ) connected to the reference voltage;
a second resistor (R 1 ) connected to the second diode;
a third resistor (R 2 ) connected to the second resistor in series;
a sixth resistor (Re) having one terminal connected to ground;
a bias transistor (Q 4 ) having a base terminal connected to a contact point (VS) between the second resistor and the third resistor and an emitter terminal connected to the other terminal of the sixth resistor; and
a seventh resistor (Rf) connected between a collector terminal of the third transistor (Q 3 ) and a collector terminal of the bias transistor.
11. The temperature-compensated bias circuit of claim 10 , wherein the voltage of the collector terminal of the bias transistor is determined by a voltage of the contact point between the second resistor and the third resistor.
12. The temperature-compensated bias circuit of claim 10 , wherein the second diode is disposed between the second resistor and the contact point.