Methods for metal plating of gate conductors and semiconductors formed thereby

1. A method of metal plating a gate conductor on a semiconductor, comprising:

defining an organic polymer plating mandrel on the semiconductor;

activating one or more sites of said organic polymer plating mandrel;

binding a seed layer to said one or more sites; and

plating a metallic conductive material to said seed layer to form the gate conductor.

2. The method of claim 1 , further comprising removing said organic polymer plating mandrel from the semiconductor.

3. The method of claim 1 , further comprising trimming said organic polymer plating mandrel after activating the one or more sites.

4. The method of claim 1 , wherein the semiconductor is single crystal silicon, silicon germanium or germanium.

5. The method of claim 1 , further comprising annealing said metallic conductive material.

6. A method of metal plating a gate conductor to a fin structure, comprising:

defining an organic polymer mandrel over the fin structure;

activating a plurality of sites of said organic polymer mandrel;

binding a plating seed layer to said plurality of sites; and

plating a metallic material on said plating seed layer, said metallic material for forming the gate conductor.

7. The method of claim 6 , wherein defining the organic polymer mandrel comprises spin coating the fin structure with a solution of organic polymer and solvent and baking the coated fin structure to remove the solvent.

8. The method of claim 6 , further comprising etching said organic polymer mandrel prior to activating said plurality of sites.

9. The method of claim 6 , wherein activating the plurality of sites comprises treating said organic polymer mandrel with an agent selected from the group consisting of ammonia plasma, oxygen plasma, sulfuric acid, peroxide wet acid, amine, and polyfunctional amine.

10. The method of claim 6 , further comprising trimming said organic polymer mandrel after activating said plurality of sites.

11. The method of claim 10 , wherein trimming said organic polymer mandrel after activating said plurality of sites defines one or more portions lacking said plurality of sites.

12. The method of claim 6 , wherein said plurality of sites comprise a plurality of amine reactive sites and wherein binding said plating seed layer comprises dipping the fin structure in an aqueous platinum chloride solution and exposing the fin structure to hydrogen gas so that platinum ions in said aqueous platinum chloride solution bind to said plurality of amine reactive sites.

13. The method of claim 6 , wherein said metallic material is selected from the group consisting of cobalt, rhodium, palladium, ruthenium, iridium, platinum, rhenium, and any combinations and/or alloys thereof.

14. The method of claim 6 , further comprising annealing said fin structure.

15. The method of claim 6 , further comprising encasing at least the gate conductor in a mold prior to annealing said metallic material and removing at least a portion of said mold.

16. The method of claim 6 , further comprising masking the fin structure and repeating said plating of said metallic material to said plating seed layer so that said metallic material forms the gate conductor having at least two different metals.

17. A method of metal plating a gate conductor, comprising:

defining an organic polymer mandrel;

activating a plurality of sites of said organic polymer mandrel;

binding a plating seed layer to said plurality of sites; and

plating a metallic material on said plating seed layer.