IP Library Granted Patent US 6,989,692
Granted Patent B1
US 6,989,692 · App. 10/908,683 · Granted Jan 24, 2006

Substrate-sensing voltage sensor for voltage comparator with voltage-to-current converters for both reference and input voltages

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Quick Facts
Patent No.
US 6,989,692
App. No.
10/908,683
Granted
Jan 24, 2006
Kind
B1
Abstract

A stable voltage that is independent of supply voltage is applied to a pair of current sources. A first current source generates a first current that passes through a first resistor, setting a compare-input voltage. A source-input voltage is applied to the first current source to vary the first current and the compare-input voltage. A second current source generates a stable current that passes through a second resistor, setting a reference voltage. The compare-input voltage and the reference voltage are applied to inputs of a comparator that generates an output voltage that indicates when the source-input voltage causes the compare-input voltage to rise past the reference voltage. The first and second currents track each other over temperature and process variations and are independent of supply voltage. A more accurate comparison of the source-input voltage is thus made.

Claims (26)

1. A voltage sensor circuit comprising:

a source-input node having a source-input voltage that is varied by a voltage source, the voltage sensor circuit sensing the source-input voltage of the source-input node;

a stable node having a stable voltage that is relatively insensitive to changes in a supply voltage;

a first current source, responsive to the source-input voltage, for generating a first current from the stable node that varies with variations in the source-input voltage;

a first resistor, coupled to the first current source and receiving the first current, for generating a compare-input voltage on a compare-input node in response to the first current, the compare-input voltage varying with variations in the first current;

a second current source for generating a second current that is insensitive to variations in the source-input voltage;

a second resistor, coupled to the second current source and receiving the second current, for generating a reference voltage on a reference node in response to the second current; and

a comparator coupled to the compare-input node and the reference node, for comparing the compare-input voltage to the reference voltage and generating an output voltage at an output node that indicates when the compare-input voltage is above the reference voltage;

wherein the first current source is a substrate-sensing transistor having a substrate node driven by the source-input voltage and a gate driven by a constant bias voltage, the substrate-sensing transistor conducting the first current between the stable node and the compare-input node,

wherein the first current through the substrate-sensing transistor varies with variations in voltage.

2. The voltage sensor circuit of claim 1 wherein the substrate-sensing transistor is a p-channel transistor and the substrate node is an N-well.

3. The voltage sensor circuit of claim 2 wherein the constant bias voltage is a ground.

4. The voltage sensor circuit of claim 3 wherein the second current source is a second p-channel transistor having a substrate node connected to the stable node and a gate driven by the constant bias voltage, the second p-channel transistor conducting the second current between the stable node and the reference node.

5. The voltage sensor circuit of claim 4 wherein a cross-over voltage of the source-input voltage that causes the output voltage to change states varies less than +/−8% over a temperature range from −40 to +85 degrees C.

6. A substrate-sensing voltage sensor comprising:

a voltage generator for generating a stable voltage on a stable node, the stable voltage being relatively insensitive to variations in a supply voltage;

a comparator that generates an output by comparing voltages of a compare-input node and a reference node;

a first transistor having a channel connected between the stable node and the compare-input node, with a gate connected to a bias voltage and a substrate connected to a source-input voltage that is varied by a voltage source;

a first resistor connected between the compare-input node and a ground;

a second transistor having a channel connected between the stable node and the reference node, with a gate connected to the bias voltage; and

a second resistor connected between the reference node and the ground,

whereby the source-input voltage from the voltage source is sensed by substrate-sensing of the first transistor.

7. The substrate-sensing voltage sensor of claim 6 wherein the first transistor is a p-channel transistor with a source connected to the stable node, a drain connected to the compare-input node, and the source-input voltage connected to a n-type substrate or an N-well under the first transistor;

wherein the second transistor is a p-channel transistor with a source connected to the stable node, a drain connected to the reference node, and the stable voltage connected to a n-type substrate or an N-well under the second transistor.

8. The substrate-sensing voltage sensor of claim 7 wherein the bias voltage is the ground,

whereby the first and second transistors have grounded gates.

Assignments (3)
SECURITY AGREEMENT Recorded Jan 23, 2018
From: DIODES INCORPORATED
To: BANK OF AMERICA, N.A., AS ADMIN. AGENT
Reel/Frame 045195/0446 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 26, 2017
From: PERICOM SEMICONDUCTOR CORPORATION
To: DIODES INCORPORATED
Reel/Frame 044975/0554 →
SECURITY INTEREST Recorded Dec 9, 2015
From: PERICOM SEMICONDUCTOR CORPORATION, AS GRANTOR
To: BANK OF AMERICA, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 037255/0122 →