Method of operating an array of laser sources integrated in a monolithic chip or in a photonic integrated circuit (PIC)
View Patent ↗A method of operating an array of laser sources integrated as an array in a single monolithic chip where the steps include designing the laser sources to have different target emission wavelengths so that together they form a spectral emission wavelength grid, coupling outputs from the laser sources to an array of gain/loss elements also integrated on the single monolithic chip, one each receiving the output from a respective laser source; and adjusting the outputs with the gain/loss elements so that the power levels across the laser source array are substantially uniform.
1. A method of operating an array of integrated laser sources formed as an array in a single monolithic chip, comprising the steps of:
providing an integrated array of laser sources designed for operation at different emission wavelengths which together provide a desired grid of spectral emission wavelengths and providing an on-chip array of outputs into integrated waveguides;
adjusting each laser source wavelength over time so that the laser sources are maintained to approximate the desired grid of spectral emission wavelengths; and
adjusting internal of the waveguides the power level of the laser source outputs so that the power levels of their outputs across the laser source array are substantially uniform across the integrated waveguides.
2. The method of claim 1 wherein the step of adjusting laser source wavelength comprises the step of adjust the operating current to each laser so that the laser sources are maintained to approximate the desired grid of spectral emission wavelengths.
3. The method of claim 1 wherein the step of adjusting laser source wavelength comprises the steps of:
providing a plurality of tuning elements on the chip, each one integrated in close proximity to a respective laser source; and
adjusting the respective emission wavelengths of the laser sources via the tuning elements so that together the laser sources approximate the desired grid of spectral emission wavelengths.
4. The method of claim 1 comprising the further step of modulating the outputs from the laser sources with data signals.
5. The method of claim 1 comprising the further step of modulating the laser sources with data signals.
6. The method of claim 1 comprising the further step of utilizing an array of gain/loss elements integrated in the output waveguides, one each for a respective laser source, to provide for adjustment of the on-chip power level of the laser sources.
7. The method of claim 6 wherein the gain/loss elements are semiconductor optical amplifiers (SOAs), variable optical attenuators (VOAs) or photodiodes (PDs).
8. The method of claim 6 comprising the further steps of:
integrating an optical combiner that has a wavelength passband response on the single monolithic chip with the laser sources where the laser source outputs are received and combined via the optical combiner to provide a single output signal;
providing a second tuning element in proximity to the optical combiner; and
adjusting the second tuning element in conjunction with laser source tuning elements to adjust optical combiner wavelength passband response to be a closer match with the spectral emission wavelength grid of the laser sources.
9. The method of claim 8 wherein said optical combiner is an power combiner or a wavelength selective combiner.
10. The method of claim 9 wherein said combiner is a star coupler, multi-mode interference (MMI) coupler, an arrayed waveguide grating or an Echelle grating.
11. The method of claim 1 wherein the spectral emission wavelength grid approximates a standardized grid.
12. The method of claim 1 wherein the spectral emission wavelength grid is a symmetric or asymmetric wavelength grid.
13. The method of claim 1 wherein the laser sources are DFB lasers or DBR lasers.
14. The method of operating an array of laser sources integrated as an array in a single monolithic chip, comprising the steps of:
designing the laser sources to have different target emission wavelengths so that together they form a spectral emission wavelength grid;
coupling outputs from the laser sources to an array of gain/loss elements also integrated on the single monolithic chip, one each receiving the output from a respective laser source; and
adjusting the outputs with the gain/loss elements so that the power levels across the laser source array across are substantially uniform.
15. The method of claim 14 comprising the further step of adjusting the current to the laser sources so that the emission wavelength of each laser source is moved closer to its target emission wavelength.
16. The method of claim 14 comprising the further step of adjusting the emission wavelengths of the laser sources with an integrated array of first tuning elements, one each for each laser source, so that the emission wavelength of each laser source is moved closer to its target emission wavelength.
17. The method of claim 16 wherein said first tuning elements are temperature changing elements, current and voltage changing elements or bandgap changing elements.
18. The method of claim 14 comprising the further steps of both:
adjusting the current to the laser sources so that the emission wavelength of each laser source is moved closer to its target emission wavelength; and
adjusting the emission wavelengths of the laser sources with an integrated array of first tuning elements, one each for each laser source, so that the emission wavelength of each laser source is moved closer to its target emission wavelength.
19. The method of claim 18 wherein said first tuning elements are temperature changing elements, current and voltage changing elements or bandgap changing elements.
20. The method of claim 14 wherein the gain/loss elements are semiconductor optical amplifiers (SOAs), variable optical attenuators (VOAs) or photodiodes (PDs).
21. The method of claim 14 wherein the spectral emission wavelength grid approximates a standardized grid.
22. The method of claim 14 wherein the spectral emission wavelength grid is a symmetric or asymmetric wavelength grid.
23. The method of claim 14 wherein the laser sources are DFB lasers or DBR lasers.
24. The method of claim 14 comprising the further step of modulating the outputs from the laser sources with data signals.
25. The method of claim 14 comprising the further step of modulating the laser sources with data signals.
26. The method of claim 14 comprising the further steps of:
integrating an optical combiner that has a wavelength passband response on the single monolithic chip with the laser sources where the laser source outputs are received and combined via the optical combiner to provide a single output signal;
providing a second tuning element in proximity to the optical combiner; and
adjusting the second tuning element in conjunction with the first tuning elements to adjust optical combiner wavelength passband response to closer match with the spectral emission wavelength grid of the laser sources.
27. The method of claim 26 wherein said optical combiner is an power combiner or a wavelength selective combiner.
28. The method of claim 27 wherein said combiner is a star coupler, multi-mode interference (MMI) coupler, an arrayed waveguide grating or an Echelle grating.
29. The method of claim 26 comprising the further step of modulating the outputs from the laser sources with data signals.
30. The method of claim 26 comprising the further step of modulating the laser sources with data signals.