Formation of a silicon sheet by cold surface casting
View Patent ↗Metallurgical grade silicon or high purity silicon beads developed from a fluidized bed process are melted in a cooled aluminum crucible, such that a non wetted interface is created between the molten silicon and a cooled supporting substrate that includes a surface layer of substantially inert aluminum oxide. It is believed that the molten silicon does not wet the surface of the supporting substrate and the surface of the supporting substrate does not chemically interact with the silicon. It is shown that, in spite of the enormous temperature difference, molten silicon (ca. 1450° C.) can be stabilized, by appropriate energy control, in direct (but non-wetted) contact with cold (ca. 40° C.) material such as aluminum.
1. An apparatus for providing a silicon sheet by melting a quantity of silicon comprising:
a plate of material characterized by high thermal conductivity and high reflectivity, defining a containment region sized for holding a quantity of silicon beads in the shape of a desired wafer;
a cover provided over the silicon to form an enclosure enabling introduction of a cover gas;
a source of energy for heating the silicon in the containment region to a molten state;
means for cooling the containment region, such that an interface is provided on the surface of the containment region, in contact with the molten silicon, that prevents wetting, chemical interaction, adhesion and heat transfer with the molten silicon; and
means for controlled cooling of the silicon and for inducing desired crystallization as the silicon is cooled.
2. An apparatus according to claim 1 , wherein the plate defining the containment region comprises aluminum or like material.
3. A process for melting silicon to provide a wafer or sheet of desired dimensions comprising:
providing a containment vessel comprising a plate of material characterized by high thermal conductivity and high reflectivity, sized to contain a quantity of silicon beads in the shape of a desired wafer;
enclosing the containment vessel to admit a cover gas;
heating the silicon to a molten state with a beam of electromagnetic energy, wherein the energy of the beam is chosen from the electromagnetic spectrum, such that the cover is transparent, the silicon is absorbing, and the containment vessel is reflective with respect to the electromagnetic energy;
cooling the containment vessel to prevent wetting of the containment vessel by the silicon;
introducing a seed crystal to induce desired crystallization as the molten silicon is cooled.
4. An apparatus for providing a silicon sheet by melting a quantity of silicon comprising:
a plate of material characterized by high thermal conductivity and high reflectivity, defining a containment region sized for holding a quantity of silicon beads in the shape of a desired wafer;
a cover provided over the silicon to form an enclosure enabling introduction of a cover gas;
a source of energy for heating the silicon in the containment region to a molten state;
means for cooling the containment region, such that a non wetted interface is provided on the surface of the containment region, in contact with the molten silicon, that prevents chemical interaction, with the molten silicon; and
means for controlled cooling of the silicon and for inducing desired crystallization as the silicon is cooled.
5. An apparatus for capacitively melting a quantity of silicon to form a silicon sheet comprising:
first and second conductive plates disposed in parallel, defining a containment region sized for holding a quantity of silicon in the shape of a desired wafer;
means for coupling an alternating current between the plates for heating the silicon in the containment region to a molten state;
means for cooling the containment region, such that a non wetting interface is provided on the surface of the containment region, in contact with the molten silicon, that prevents chemical interaction with the molten silicon; and
means for introducing a seed crystal to the molten silicon for inducing desired crystallization as the silicon is cooled.
6. An apparatus for capacitively melting a quantity of silicon to form a silicon sheet as in claim 5 , wherein the conductive plates are aluminum.
7. An apparatus for capacitively melting a quantity of silicon to form a silicon sheet as in claim 6 further comprising an aluminum oxide layer provided on the surface of the containment region such that a non wetting interface is established between the molten silicon and the surface of the containment region that prevents chemical interaction.