Dual port memory with asymmetric inputs and outputs, device, system and method
View Patent ↗An asymmetric memory interface including an asymmetric read data interface having a read bus width configured to transfer data from a memory device to a memory controller. The asymmetric memory interface further includes an asymmetric write data interface having a write bus width configured to transfer data from the memory controller to the memory device with the write bus width being different from the read bus width. A memory system including the asymmetric memory interface, memory controller and memory device is disclosed. The asymmetric nature of inputs and outputs reduces pin count by avoiding symmetric replication of bus widths for inputs and outputs. A method of accessing data in a memory device is also disclosed.
1. An asymmetric memory interface, comprising:
an asymmetric read data interface having a read bus width configured to transfer data from a memory device to a memory controller; and
an asymmetric write data interface having a write bus width configured to transfer data from the memory controller to the memory device, the write bus width being different from the read bus width,
wherein the asymmetric read data interface and the asymmetric write data interface transfer the data according to different multi data rate methodologies.
2. The asymmetric memory interface of claim 1 , wherein the read bus width is greater in width than the write bus width.
3. The asymmetric memory interface of claim 1 , wherein the asymmetric read data interface is configured to operate according to a dual data rate (DDR) methodology.
4. The asymmetric memory interface of claim 1 , wherein the asymmetric write data interface is configured to operate according to a dual data rate (DDR) methodology.
5. The asymmetric memory interface of claim 1 , wherein at least one of the asymmetric read data interface and the asymmetric write data interface is configured to operate according to a quad data rate (QDR) methodology.
6. The asymmetric memory interface of claim 1 , further comprising at least one of a command and address bus coupled between the memory controller and the memory device.
7. A memory system, comprising:
a memory controller;
a memory device; and
an asymmetric interface coupling the memory controller with the memory device, the asymmetric interface including:
an asymmetric read data interface of a read bus width configured to transfer data from the memory device to the memory controller; and
an asymmetric write data interface of a write bus width configured to transfer data from the memory controller to the memory device, the write bus width being different from the read bus width,
wherein the asymmetric read data interface and the asymmetric write data interface transfer the data according to different multi data rate methodologies.
8. The memory system of claim 7 , wherein the read bus width is greater in width than the write bus width.
9. The memory system of claim 7 , wherein the asymmetric read data interface, the memory controller and the memory device are configured to operate according to a dual data rate (DDR) methodology.
10. The memory system of claim 7 , wherein the asymmetric write data interface, the memory controller and the memory device are configured to operate according to a dual data rate (DDR) methodology.
11. The memory system of claim 7 , wherein the memory controller, the memory device and at least one of the asymmetric read data interface and the asymmetric write data interface are configured to operate according to a quad data rate (QDR) methodology.
12. The memory system of claim 7 , further comprising at least one of a command and address bus coupled between the memory controller and the memory device.
13. A memory device, comprising:
a memory array; and
an interface configured to operably couple with an asymmetric interface for coupling a memory controller with the memory device, the interface including:
an asymmetric read data interface of a read bus width configured to transfer data from the memory device to the memory controller; and
an asymmetric write data interface of a write bus width configured to transfer data from the memory controller to the memory device, the write bus width being different from the read bus width,
wherein the asymmetric read data interface and the asymmetric write data interface transfer the data according to different multi data rate methodologies.
14. The memory device of claim 13 , wherein the interface is further configured to support the asymmetric interface wherein the read bus width is greater in width than the write bus width.
15. The memory device of claim 13 , wherein the interface is further configured to support the asymmetric read data interface of the asymmetric interface when configured to operate according to a dual data rate (DDR) methodology.
16. The memory device of claim 13 , wherein the interface is further configured to support the asymmetric write data interface of the asymmetric interface when configured to operate according to a dual data rate (DDR) methodology.
17. The memory device of claim 13 , wherein the interface is further configured to support at least one of the asymmetric write data interface and the asymmetric read data interface of the asymmetric interface when configured to operate according to a quad data rate (QDR) methodology.
18. The memory device of claim 13 , wherein the interface is further configured to support at least one of a command and address bus coupled to the memory device.
19. An electronic system, comprising:
a processor device;
a memory controller coupled to the processor device; and
an asymmetric memory interface, comprising:
an asymmetric read data interface of a read bus width configured to transfer data from a memory device to the memory controller; and
an asymmetric write data interface of a write bus width configured to transfer data from the memory controller to the memory device, the write bus width being different from the read bus width,
wherein the asymmetric read data interface and the asymmetric write data interface transfer the data according to different multi data rate methodologies.
20. The electronic system of claim 19 , wherein the read bus width is greater in width than the write bus width.
21. The electronic system of claim 19 , wherein the asymmetric read data interface is configured to operate according to a dual data rate (DDR) methodology.
22. The electronic system of claim 19 , wherein the asymmetric write data interface is configured to operate according to a dual data rate (DDR) methodology.
23. The electronic system of claim 19 , wherein at least one of the asymmetric read data interface and the asymmetric write data interface is configured to operate according to a quad data rate (QDR) methodology.
24. The electronic system of claim 19 , further comprising at least one of a command and address bus coupled between the memory controller and the memory device.
25. A method of accessing data in a memory device, comprising:
writing data from a memory controller over an asymmetric write data interface of a write bus width to a memory device;
storing the data in the memory device; and
reading the data from the memory device over an asymmetric read data interface of a read bus width to the memory controller, the write bus width being different from the read bus width,
wherein the asymmetric read data interface and the asymmetric write data interface transfer the data according to different multi data rate methodologies.
26. The method of claim 25 , wherein reading includes reading the data from the memory device over an asymmetric read data interface wherein the read bus width is greater than the write bus width.
27. The method of claim 25 , wherein reading the data includes reading the data according to a dual data rate (DDR) methodology.
28. The method of claim 25 , wherein writing data includes writing the data according to a dual data rate (DDR) methodology.
29. The method of claim 25 , wherein at least one of writing and reading the data occurs according to a quad data rate (QDR) methodology.