IP Library Granted Patent US 7,068,926
Granted Patent B2
US 7,068,926 · App. 10/926,639 · Granted Jun 27, 2006

Heat treatment apparatus of light-emission type and method of cleaning same

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Quick Facts
Patent No.
US 7,068,926
App. No.
10/926,639
Granted
Jun 27, 2006
Kind
B2
Abstract

After the maintenance of a heat treatment apparatus, a susceptor and a heating plate are moved upwardly and a nitrogen gas flow from an inlet toward an outlet passage is produced prior to heat treating a semiconductor wafer. In this state, flash lamps are turned on to cause momentary expansion and contraction of the gas in a chamber, thereby scattering particles deposited on a bottom plate, etc. The scattered particles are removed by the nitrogen gas passing through a bottom portion of the chamber and discharged through the outlet passage. The particles are easily removed due to the flash lamps being turned on a predetermined number of times at fixed time intervals while folowing the nitrogen gas. The heat treatment apparatus has a light-emission characteristic and easily removes the particles in the chamber.

Claims (32)

1. A heat treatment apparatus for exposing a substrate to a flash of light to heat the substrate, comprising:

a process chamber for receiving a substrate therein;

a flash lamp for emitting a flash of light toward the interior of said process chamber to scatter particles in a treatment space within said process chamber;

an exhaust element for exhausting gas from said treatment space; and

a control element for controlling said flash lamp to emit a flash of light toward the interior of said process chamber, with an objective substrate prohibited from being transported into said process chamber.

2. The heat treatment apparatus according to claim 1 , wherein

said exhaust element exhausts gas from said treatment space through a bottom portion of said process chamber.

3. The heat treatment apparatus according to claim 2 , further comprising

a gas supply element for supplying an inert gas to the bottom portion of said process chamber.

4. A heat treatment apparatus for exposing a substrate to flash of light to heat the substrate, comprising:

a process chamber for receiving a substrate therein;

a flash lamp for emitting a flash of light toward the interior of said process chamber;

an exhaust element for exhausting gas from a treatment space within said process chamber; and

a control element for controlling said flash lamp to emit a flash of light toward the interior of said process chamber, with an objective substrate prohibited from being transported into said process chamber.

5. The heat treatment apparatus according to claim 4 , wherein

said exhaust element exhausts gas from said treatment space through a bottom portion of said process chamber.

6. The heat treatment apparatus according to claim 5 , further comprising

a gas supply element for supplying an inert gas to the bottom portion of said process chamber.

7. A method of cleaning a heat treatment apparatus, said heat treatment apparatus exposing a substrate received in a process chamber to a flash of light to heat the substrate, said method comprising the steps of:

a) emitting a flash of light from a flash lamp toward the interior of said process chamber, with an objective substrate prohibited from being transported into said process chamber, to scatter particles in a treatment space within said process chamber; and

b) exhausting gas from said treatment space with the particles scattered therein.

8. The method according to claim 7 , wherein

said step b) includes exhausting gas from said treatment space through a bottom portion of said process chamber.

9. The method according to claim 8 , further comprising the step of

c) supplying an inert gas to the bottom portion of said process chamber.

10. A method of cleaning a heat treatment apparatus, said heat treatment apparatus exposing a substrate received in a process chamber to a flash of light to heat the substrate, said method comprising the steps of:

a) emitting a flash of light from a flash lamp toward the interior of said process chamber, with an objective substrate prohibited from being transported into said process chamber; and

b) exhausting gas from a treatment space within said process chamber.

11. The method according to claim 10 , wherein

said step b) includes exhausting gas from said treatment space through a bottom portion of said process chamber.

12. The method according to claim 11 , further comprising the step of

c) supplying an inert gas to the bottom portion of said process chamber.

Assignments (2)
CHANGE OF NAME Recorded Mar 12, 2015
From: DAINIPPON SCREEN MFG. CO., LTD.
To: SCREEN HOLDINGS CO., LTD.
Reel/Frame 035248/0483 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 26, 2004
From: NOZAKI, YOSHIHIDE
To: DAINIPPON SCREEN MFG. CO., LTD.
Reel/Frame 015744/0551 →