Mask complementary multiple exposure technique
View Patent ↗A method for creating a pattern on an exposure site of a material blank using an exposure apparatus includes providing a mask having a first mask pattern. The mask is positioned between the exposure apparatus and the material blank. The exposure site of the material blank is exposed. One or more additional exposure events are performed for patterning the exposure site of the material blank. Between each exposure event, the exposure site of the material blank is repositioned in a lateral direction with respect to the mask. Between successive exposure events involving the first mask pattern, there is a relative movement between the mask and the material blank of a distance less than or equal to a length of the first mask pattern.
1. An exposure method for creating a pattern on an exposure site of a material blank using an exposure apparatus, the method comprising:
providing a mask having a first mask pattern, wherein the mask comprises an array of mask units configured to define the first mask pattern, wherein each mask unit is a binary halftone mask unit having sub-resolution features therein for defining a transmittance level of the mask unit;
positioning the mask between the exposure apparatus and the material blank;
exposing the exposure site of the material blank; and
performing one or more additional exposing steps for patterning the exposure site, wherein between each exposing step the exposure site of the material blank is repositioned in a lateral direction with respect to the mask, and wherein between successive exposing steps involving the first mask pattern there is a relative movement between the mask and the material blank of a distance less than or equal to the length of the first mask pattern.
2. The method of claim 1 and further comprising performing a smoothing event.
3. The method of claim 2 and further comprising performing a defocus event.
4. The method of claim 1 further comprising trimming the pattern on the exposure site of the material blank with a second mask pattern.
5. The method of claim 4 wherein the mask comprises the second mask pattern.
6. The method of claim 5 wherein the exposure apparatus is a stepper and the first mask pattern and the second mask pattern are exposed sequentially during a single stepper pass over the material blank.
7. The method of claim 1 wherein an energy level of each exposing step is approximately equal and less than a total energy required to image the pattern on the material blank.
8. The method of claim 1 wherein alignment of the exposure apparatus remains substantially perpendicular to the material blank.
9. A method of photolithography using a binary halftone mask and an exposure apparatus, the method comprising:
dividing an exposure process into multiple exposure events, wherein the exposure apparatus is positioned perpendicular to a material blank and between successive exposing steps involving the first mask pattern there is a relative movement between the mask and the material blank, for increasing smoothness of a feature formed on the material blank.
10. The method of claim 9 and further comprising performing a smoothing event.
11. The method of claim 10 wherein the smoothing event is a defocus event.
12. The method of claim 10 wherein the smoothing event is a post-bake event.
13. The method of claim 9 wherein the exposure apparatus is a zx stepper, where “z” is an integer.
14. The method of claim 9 wherein an energy level of each exposure event is approximately equal and less than a total energy of the exposure process required to image the pattern on the material blank.
15. An exposure method for creating a pattern on an exposure site of a material blank using an exposure apparatus, the method comprising:
providing a binary halftone mask having a first mask pattern and a second mask pattern;
positioning the binary halftone mask between the exposure apparatus and the material blank;
exposing the exposure site of the material blank using the first mask pattern;
performing a relative lateral movement between the material blank and the binary halftone mask of a distance less than or equal to a length of the first mask pattern after exposing the exposure site of the material blank using the first mask pattern; and
smoothing the exposure site of the material blank with another exposure of the first mask pattern.
16. The method of claim 15 further comprising performing a smoothing event.
17. The method of claim 15 further comprising performing a trimming exposure event using the second mask pattern.
18. The method of claim 15 wherein the material blank is moved at least twice.
19. The method of claim 15 wherein the exposure site of the material blank is exposed at least three times using the first mask pattern.
20. A method of trimming undesired features on a material blank, the method comprising:
performing a plurality of exposure events to pattern features in a photoresist layer of the material blank, wherein each exposure event utilizes a binary halftone mask pattern that defines a stepped exposure pattern;
performing a lateral movement between the binary halftone mask pattern and the material blank between successive exposure events;
positioning a binary trim mask pattern relative the patterned material blank; and exposing the binary trim mask pattern;
wherein exposure of the binary trim mask pattern reduces a total area of raised features on the material blank, and wherein exposure of the binary trim mask pattern removes remnants of smoothing exposures of the binary halftone mask pattern located adjacent to patterned features.
21. The method of claim 14 , wherein a first of the multiple exposure events forms a stepped profile in the material blank, and wherein a second of the multiple exposure events forms additional steps in the stepped profile formed in the material blank for increasing the smoothness of the stepped profile.