IP Library Granted Patent US 7,464,306
Granted Patent B1
US 7,464,306 · App. 10/927,871 · Granted Dec 9, 2008

Status of overall health of nonvolatile memory

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Quick Facts
Patent No.
US 7,464,306
App. No.
10/927,871
Granted
Dec 9, 2008
Kind
B1
Abstract

A nonvolatile memory system includes nonvolatile memory organized into blocks, one or more of which are designated as spare blocks and one or more of which may be defective at the time of manufacturing of the nonvolatile memory. A controller device is coupled to the nonvolatile memory for measuring the health status of the nonvolatile memory by determining the number of growing defects on an on-going basis.

Claims (49)

1. A nonvolatile memory system comprising:

nonvolatile memory organized into blocks, one or more of which are designated as spare blocks and one or more of which may be defective at the time of manufacturing of the nonvolatile memory; and

a controller device coupled to the nonvolatile memory for measuring the health status of the nonvolatile memory by determining a number of growing defects on an on-going basis and determining a total number of remaining spare blocks at the time of the measurement of the health status by subtracting the number of defects at the time of the measurement of the health status from a total number of spare blocks within the nonvolatile memory that are initially reserved as spare blocks, wherein the total number of remaining spare blocks at the time of the measurement of the health status is indicative of the health status of the nonvolatile memory;

wherein the controller is configured to output a signal indicative of the total number of remaining spare blocks at the time of the measurement of the health status.

2. A nonvolatile memory system as recited in claim 1 wherein the controller device measures the health status using the equation,

HS=SB rem /( SB fw −MD ),

wherein HS is a health status of the nonvolatile memory, MD is the number of defects detected at the time of manufacturing of the nonvolatile memory, SB fw is the total number of spare blocks within the nonvolatile memory that are initially reserved as spare blocks, and SB rem is the total number of spare blocks remaining at the time of the measurement of the health status of the nonvolatile memory.

3. A nonvolatile memory system as recited in claim 2 wherein HS is (SB rem /(SB fw −MD))*100 representing a measurement of the number of growing defects in percentage.

4. A nonvolatile memory system as recited in claim 2 wherein HS is rounded up to the next integer as follows: int (HS+0.5).

5. A nonvolatile memory system as recited in claim 2 wherein the value of HS is displayed to a user of the nonvolatile memory system.

6. A nonvolatile memory system comprising:

nonvolatile memory organized into blocks, one or more of which are designated as spare blocks and one or more of which may be defective at the time of manufacturing of the nonvolatile memory;

a controller device coupled to the nonvolatile memory; and

a display;

wherein the controller device measures the health status of the nonvolatile memory by determining a number of growing defects on an on-going basis and determining a total number of remaining spare blocks at the time of the measurement of the health status by subtracting the number of defects at the time of the measurement of the health status from a total number of spare blocks within the nonvolatile memory that are initially reserved as spare blocks, the total number of remaining spare blocks at the time of the measurement of the health status indicative of the health status of the nonvolatile memory; and

wherein the display is configured to display a value indicative of the total number of remaining spare blocks at the time of the measurement of the health status.

7. A nonvolatile memory system as recited in claim 6 wherein the total number of remaining spare blocks at the time of the measurement of the health status comprises a number of defects detected at the time of manufacturing of the nonvolatile memory.

8. A nonvolatile memory system as recited in claim 6 wherein the controller device measures the health status of the nonvolatile memory using the equation,

HS=SB rem /( SB fw −MD ),

wherein HS is a health status of the nonvolatile memory, MD is the number of defects detected at the time of manufacturing of the nonvolatile memory, SB fw is the total number of spare blocks within the nonvolatile memory that are initially reserved as spare blocks, and SB rem is the total number of spare blocks remaining at the time of the measurement of the health status of the nonvolatile memory.

9. A nonvolatile memory system as recited in claim 8 wherein HS is (SB rem /(SB fw −MD))*100 representing a measurement of the number of growing defects in percentage.

10. A nonvolatile memory system as recited in claim 8 wherein HS is rounded up to the next integer as follows: int (HS+0.5).

11. A nonvolatile memory system as recited in claim 6 wherein the health status is reported to a host.

12. A nonvolatile memory system as recited in claim 6 wherein the display is one or more light emitting diodes (LEDs).

13. A nonvolatile memory system as recited in claim 6 wherein the display is nonvolatile.

14. A method for measuring the health of nonvolatile memory system comprising:

noting a number of blocks included within nonvolatile memory that were defective at a time of manufacturing of the nonvolatile memory;

reserving a number of spare blocks within the nonvolatile memory at the time of manufacturing of the nonvolatile memory;

measuring the health status of the nonvolatile memory during operation of the nonvolatile memory by determining a number of growing defects on an on-going basis and determining a total number of remaining spare blocks at the time of the measurement of the health status by subtracting the number of defects at the time of the measurement of the health status, including the number of blocks that were defective at the time of manufacturing, from the number of spare blocks reserved at the time of manufacturing, the total number of remaining spare blocks at the time of the measurement of the health status indicative of the health status of the nonvolatile memory;

outputting a signal indicative of the total number of remaining spare blocks at the time of the measurement of the health status.

15. A method for measuring as recited in claim 14 wherein the measuring step includes calculating the equation,

HS=SB rem /( SB fw −MD ),

wherein HS is a health status of the nonvolatile memory, MD is the number of blocks that were defective at the time of manufacturing of the nonvolatile memory, SB fw is the number of spare blocks reserved at the time of manufacturing, and SB rem is the total number of spare blocks remaining at the time of the measurement of the health status of the nonvolatile memory.

16. A method for measuring as recited in claim 14 further including the step of displaying a value representing the health status.

17. A nonvolatile memory system comprising:

nonvolatile memory organized into blocks, one or more of which are designated as spare blocks and one or more of which may be defective at the time of manufacturing of the nonvolatile memory; and

controller means coupled to the nonvolatile memory for measuring the health status of the nonvolatile memory by determining a number of growing defects on an on-going basis and determining a total number of remaining spare blocks at the time of the measurement of the health status by subtracting the number of defects at the time of the measurement of the health status from a total number of spare blocks within the nonvolatile memory that are initially reserved as spare blocks, wherein the total number of remaining spare blocks at the time of the measurement of the health status is indicative of the health status of the nonvolatile memory;

wherein the controller means is configured to output a signal indicative of the total number of remaining spare blocks at the time of the measurement of the health status.

18. A nonvolatile memory system as recited in claim 17 wherein the controller means measures the health status using the equation,

HS=SB rem /( SB fw −MD ),

wherein HS is a health status of the nonvolatile memory, MD is the number of defects detected at the time of manufacturing of the nonvolatile memory, SB fw is the total number of spare blocks within the nonvolatile memory that are initially reserved as spare blocks, and SB rem is the total number of spare blocks remaining at the time of the measurement of the health status of the nonvolatile memory.

19. A nonvolatile memory system as recited in claim 18 wherein HS is (SB rem /(SB fw −MD))*100 representing a measurement of the number of growing defects in percentage.

20. A nonvolatile memory system as recited in claim 18 wherein HS is rounded up to the next integer as follows: int (HS+0.5).

21. A nonvolatile memory system as recited in claim 17 wherein the health status is reported to a host.

22. A nonvolatile memory system comprising:

a host; and

a nonvolatile memory organized into blocks, one or more of which are designated as spare blocks and one or more of which may be defective at the time of manufacturing of the nonvolatile memory, the nonvolatile memory comprising a control device coupled to the blocks and to the host, the nonvolatile memory comprising a display;

wherein the health status of the nonvolatile memory is measured by the host by determining a number of growing defects on an on-going basis and determining a total number of remaining spare blocks at the time of the measurement of the health status by subtracting the number of defects at the time of the measurement of the health status from a total number of spare blocks within the nonvolatile memory that are initially reserved as spare blocks, wherein the total number of remaining spare blocks at the time of the measurement of the health status is indicative of the health status of the nonvolatile memory; and

wherein the display is configured to display a value indicative of the total number of remaining spare blocks at the time of the measurement of the health status.

Assignments (9)
RELEASE OF SECURITY INTEREST Recorded Nov 12, 2019
From: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
Reel/Frame 051028/0001 →
RELEASE OF SECURITY INTEREST Recorded Oct 9, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 050937/0001 →
RELEASE OF SECURITY INTEREST Recorded Aug 23, 2018
From: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 047243/0001 →
SECURITY INTEREST Recorded Jul 13, 2018
From: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 047540/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REPLACE ERRONEOUSLY FILED PATENT #7358718 WITH THE CORRECT PATENT #7358178 PREVIOUSLY RECORDED ON REEL 038669 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY INTEREST. Recorded Jun 8, 2017
From: MICRON TECHNOLOGY, INC.
To: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 043079/0001 →
PATENT SECURITY AGREEMENT Recorded Jun 2, 2016
From: MICRON TECHNOLOGY, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
Reel/Frame 038954/0001 →
SECURITY INTEREST Recorded May 12, 2016
From: MICRON TECHNOLOGY, INC.
To: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 038669/0001 →
MERGER Recorded Mar 25, 2011
From: LEXAR MEDIA, INC.
To: MICRON TECHNOLOGY, INC.
Reel/Frame 026024/0131 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 27, 2004
From: FURUHJELM, MARTIN RAGNAR; HELLMOLD, STEFFEN MARKUS
To: LEXAR MEDIA, INC.
Reel/Frame 015743/0508 →